Memory

Part Number	Description / PDF	Quantity
CY14E256L-SZ45XC IR (Infineon Technologies)	IC NVSRAM 256KBIT PAR 32SOIC	2089
CY14B101LA-ZS25XI IR (Infineon Technologies)	IC NVSRAM 1MBIT PAR 44TSOP II	98
CY7C1512KV18-300BZXI IR (Infineon Technologies)	QDR SRAM, 4MX18, 0.45NS PBGA165	36
CY7C1412AV18-250BZXC IR (Infineon Technologies)	IC SRAM 36MBIT PARALLEL 165FBGA	58
CY7C1420BV18-200BZC IR (Infineon Technologies)	IC SRAM 36MBIT PARALLEL 165FBGA	1307
CY7C11651KV18-400BZXC IR (Infineon Technologies)	IC SRAM 18MBIT PARALLEL 165FBGA	1296
CY7C12681KV18-450BZXC IR (Infineon Technologies)	IC SRAM 36MBIT PARALLEL 165FBGA	145
CY7C1020BN-15ZXC IR (Infineon Technologies)	IC SRAM 512KBIT PAR 44TSOP II	1037
CY7C1360C-166AJXCT IR (Infineon Technologies)	IC SRAM 9MBIT PARALLEL 100TQFP	0
CY7C1612KV18-333BZC IR (Infineon Technologies)	IC SRAM 144MBIT PARALLEL 165FBGA	105
CY62147GE18-55BVXI IR (Infineon Technologies)	STANDARD SRAM, 256KX16, 55NS PBG	75
S29GL256S10GHIV20 IR (Infineon Technologies)	IC FLASH 256MBIT PARALLEL 56FBGA	0
CY14ME064Q2A-SXQ IR (Infineon Technologies)	IC NVSRAM 64KBIT SPI 40MHZ 8SOIC	0
CY7C1514V18-167BZI IR (Infineon Technologies)	IC SRAM 72MBIT PARALLEL 165FBGA	287
CY62138FLL-45ZSXIT IR (Infineon Technologies)	IC SRAM 2MBIT PARALLEL 32TSOP II	1000
CY7C1021BN-15VXE IR (Infineon Technologies)	IC SRAM 1MBIT PARALLEL 44SOJ	2302
CY7C1512JV18-267BZI IR (Infineon Technologies)	IC SRAM 72MBIT PARALLEL 165FBGA	300
CY7C1318SV18-250BZC IR (Infineon Technologies)	IC SRAM 18MBIT PARALLEL 165FBGA	454
STK14C88-3NF35 IR (Infineon Technologies)	IC NVSRAM 256KBIT PAR 32SOIC	0
CY7C1372S-167BGC IR (Infineon Technologies)	IC SRAM 18MBIT PARALLEL 119PBGA	2058

Memory

1. Overview

Memory integrated circuits (ICs) are semiconductor devices used for storing digital data in electronic systems. As fundamental components of modern electronics, they enable data retention and retrieval in computers, mobile devices, industrial equipment, and automotive systems. Memory ICs are categorized into volatile (requires power to retain data) and non-volatile (retains data without power) types, playing critical roles in system performance, storage capacity, and energy efficiency.

2. Major Types and Functional Classification

Type	Functional Characteristics	Application Examples
DRAM (Dynamic RAM)	High-density, low-cost, requires periodic refresh	PCs, Servers, Graphics Cards
NAND Flash	Non-volatile, high endurance, block-level access	SSDs, USB Drives, Mobile Storage
SRAM (Static RAM)	High-speed, low density, no refresh required	Cache Memory, Networking Equipment
NOR Flash	Random access, execute-in-place capability	Embedded Systems, Automotive ECUs
MRAM (Magnetoresistive RAM)	Non-volatile, unlimited endurance, low power	IoT Devices, Industrial Sensors

3. Structure and Composition

Memory ICs typically consist of:

Storage Cell Array: Matrix of memory cells (transistors/capacitors for DRAM, floating-gate transistors for Flash)
Address Decoder: Selects specific memory locations
I/O Circuits: Data input/output interfaces
Control Logic: Manages read/write operations and timing
Power Management Units: Optimizes energy consumption

Advanced packages include BGA (Ball Grid Array) and 3D-stacked configurations for density optimization.

4. Key Technical Specifications

Parameter	Description	Importance
Storage Capacity	Data volume (Gb/GiB)	Determines system memory limits
Access Time	ns/predictable latency	Impacts processing speed
Power Consumption	mW/MHz	Affects battery life and thermal design
Endurance	P/E cycles (Flash)	Dictates product lifespan
Data Retention	Years (non-volatile)	Critical for long-term storage

5. Application Areas

Consumer Electronics: Smartphones (NAND Flash), Gaming Consoles (GDDR6)
Industrial Automation: PLCs (SRAM), Data Loggers (MRAM)
Automotive Systems: ADAS (LPDDR5), Infotainment (eMMC)
Enterprise Storage: SSD Controllers (3D NAND), Servers (RDIMM)

6. Leading Manufacturers and Products

Manufacturer	Representative Products
Samsung Electronics	V-NAND (9x-layer), LPDDR5X
SK hynix	HBM3 (8GB/s bandwidth), GDDR6
Microchip Technology	Serial NOR Flash (SST26)
Kioxia Corporation	BiCS FLASH (3D NAND)
Infineon Technologies	MRAM (40nm process)

7. Selection Recommendations

Key considerations:

Match memory type to application requirements (e.g., NOR Flash for code storage)
Evaluate bandwidth vs. latency tradeoffs
Analyze temperature and vibration specifications
Assess long-term supply stability
Optimize cost-per-bit metrics

Case Study: A smartphone manufacturer selected UFS 3.1 (NAND-based) for 2100MB/s read speeds, improving app launch times by 35%.

8. Industry Trends

Future directions include:

3D NAND scaling beyond 200 layers
Emerging memories (ReRAM, PCM) for AI acceleration
Package-on-Package (PoP) integration
AI-optimized memory architectures (Processing-in-Memory)
Green manufacturing processes (EUV lithography)