Memory

Part Number	Description / PDF	Quantity
CY7C1355C-133BGCT IR (Infineon Technologies)	IC SRAM 9MBIT PARALLEL 119PBGA	500
CY7C1565KV18-400BZXC IR (Infineon Technologies)	QDR SRAM, 2MX36, 0.45NS PBGA165	67
S29GL064S70TFI070 IR (Infineon Technologies)	IC FLASH 64MBIT PARALLEL 56TSOP	540
S29AL008J70BFA023 IR (Infineon Technologies)	PARALLEL NOR FLASH, 512KX16, 70N	0
CY7C1399BN-12ZXC IR (Infineon Technologies)	IC SRAM 256KBIT PAR 28TSOP I	0
CY7C12501KV18-400BZC IR (Infineon Technologies)	IC SRAM 36MBIT PARALLEL 165FBGA	10
CY62256VNLL-70SNXE IR (Infineon Technologies)	IC SRAM 256KBIT PARALLEL 28SOIC	0
CY7C1440AV25-250BZXI IR (Infineon Technologies)	CACHE SRAM, 1MX36, 2.6NS PBGA165	403
CY7C1021CV33-15ZXC IR (Infineon Technologies)	IC SRAM 1MBIT PARALLEL 44TSOP II	543
CY7C0831AV-133AXI IR (Infineon Technologies)	IC SRAM 2MBIT PARALLEL 120TQFP	289
CY7C1612KV18-333BZXC IR (Infineon Technologies)	QDR SRAM, 8MX18, 0.45NS PBGA165	98
CY7C1320SV18-167BZC IR (Infineon Technologies)	IC SRAM 18MBIT PARALLEL 165FBGA	190
CY14ME064J2-SXI IR (Infineon Technologies)	IC NVSRAM 64KBIT I2C 8SOIC	5728
CY7C1643KV18-450BZC IR (Infineon Technologies)	QDR SRAM, 8MX18, 0.45NS, CMOS, P	169
CY7C1515KV18-333BZXC IR (Infineon Technologies)	IC SRAM 72MBIT PARALLEL 165FBGA	163
S34MS02G200GHI000 IR (Infineon Technologies)	IC FLASH 2GBIT PARALLEL 67BGA	0
CY7C1399B-12ZC IR (Infineon Technologies)	IC SRAM 256KBIT PAR 28TSOP I	3026
CY7C1414AV18-200BZXC IR (Infineon Technologies)	IC SRAM 36MBIT PARALLEL 165FBGA	238
CY7C09579V-83AC IR (Infineon Technologies)	IC SRAM 1.152MBIT PAR 144TQFP	4093
CY7C1250KV18-400BZI IR (Infineon Technologies)	DDR SRAM, 1MX36, 0.45NS PBGA165	1246

Memory

1. Overview

Memory integrated circuits (ICs) are semiconductor devices used for storing digital data in electronic systems. As fundamental components of modern electronics, they enable data retention and retrieval in computers, mobile devices, industrial equipment, and automotive systems. Memory ICs are categorized into volatile (requires power to retain data) and non-volatile (retains data without power) types, playing critical roles in system performance, storage capacity, and energy efficiency.

2. Major Types and Functional Classification

Type	Functional Characteristics	Application Examples
DRAM (Dynamic RAM)	High-density, low-cost, requires periodic refresh	PCs, Servers, Graphics Cards
NAND Flash	Non-volatile, high endurance, block-level access	SSDs, USB Drives, Mobile Storage
SRAM (Static RAM)	High-speed, low density, no refresh required	Cache Memory, Networking Equipment
NOR Flash	Random access, execute-in-place capability	Embedded Systems, Automotive ECUs
MRAM (Magnetoresistive RAM)	Non-volatile, unlimited endurance, low power	IoT Devices, Industrial Sensors

3. Structure and Composition

Memory ICs typically consist of:

Storage Cell Array: Matrix of memory cells (transistors/capacitors for DRAM, floating-gate transistors for Flash)
Address Decoder: Selects specific memory locations
I/O Circuits: Data input/output interfaces
Control Logic: Manages read/write operations and timing
Power Management Units: Optimizes energy consumption

Advanced packages include BGA (Ball Grid Array) and 3D-stacked configurations for density optimization.

4. Key Technical Specifications

Parameter	Description	Importance
Storage Capacity	Data volume (Gb/GiB)	Determines system memory limits
Access Time	ns/predictable latency	Impacts processing speed
Power Consumption	mW/MHz	Affects battery life and thermal design
Endurance	P/E cycles (Flash)	Dictates product lifespan
Data Retention	Years (non-volatile)	Critical for long-term storage

5. Application Areas

Consumer Electronics: Smartphones (NAND Flash), Gaming Consoles (GDDR6)
Industrial Automation: PLCs (SRAM), Data Loggers (MRAM)
Automotive Systems: ADAS (LPDDR5), Infotainment (eMMC)
Enterprise Storage: SSD Controllers (3D NAND), Servers (RDIMM)

6. Leading Manufacturers and Products

Manufacturer	Representative Products
Samsung Electronics	V-NAND (9x-layer), LPDDR5X
SK hynix	HBM3 (8GB/s bandwidth), GDDR6
Microchip Technology	Serial NOR Flash (SST26)
Kioxia Corporation	BiCS FLASH (3D NAND)
Infineon Technologies	MRAM (40nm process)

7. Selection Recommendations

Key considerations:

Match memory type to application requirements (e.g., NOR Flash for code storage)
Evaluate bandwidth vs. latency tradeoffs
Analyze temperature and vibration specifications
Assess long-term supply stability
Optimize cost-per-bit metrics

Case Study: A smartphone manufacturer selected UFS 3.1 (NAND-based) for 2100MB/s read speeds, improving app launch times by 35%.

8. Industry Trends

Future directions include:

3D NAND scaling beyond 200 layers
Emerging memories (ReRAM, PCM) for AI acceleration
Package-on-Package (PoP) integration
AI-optimized memory architectures (Processing-in-Memory)
Green manufacturing processes (EUV lithography)