Memory

Part Number	Description / PDF	Quantity
CY7C1643KV18-400BZC IR (Infineon Technologies)	IC SRAM 144MBIT PARALLEL 165FBGA	40
CY7C199CN-12VXI IR (Infineon Technologies)	IC SRAM 256KBIT PARALLEL 28SOJ	0
CY62256NL-70PXC IR (Infineon Technologies)	IC SRAM 256KBIT PARALLEL 28DIP	0
CY7C1315BV18-250BZC IR (Infineon Technologies)	IC SRAM 18MBIT PARALLEL 165FBGA	64
CY7C2565KV18-500BZXC IR (Infineon Technologies)	IC SRAM 72MBIT PARALLEL 165FBGA	52
CY7C4121KV13-667FCXC IR (Infineon Technologies)	QDR SRAM, 8MX18 PBGA361	75
CY7C1312BV18-250BZC IR (Infineon Technologies)	IC SRAM 18MBIT PARALLEL 165FBGA	1941
CY62126EV30LL-55BVXE IR (Infineon Technologies)	IC SRAM 1MBIT PARALLEL 48VFBGA	1215
CY62256VNLL-70SNXI IR (Infineon Technologies)	IC SRAM 256KBIT PARALLEL 28SOIC	0
CY7C1568KV18-500BZXI IR (Infineon Technologies)	IC SRAM 72MBIT PARALLEL 165FBGA	269
S29GL256N11FFA020 IR (Infineon Technologies)	PARALLEL NOR MIRRORBIT FLASH, 25	440
CY7C1245KV18-450BZC IR (Infineon Technologies)	IC SRAM 36MBIT PARALLEL 165FBGA	233
CY14B256L-SP45XC IR (Infineon Technologies)	IC NVSRAM 256KBIT PAR 48SSOP	4468
S29GL064S80TFV020 IR (Infineon Technologies)	IC FLASH 64MBIT PARALLEL 56TSOP	0
CY7C1470BV25-200BZXI IR (Infineon Technologies)	IC SRAM 72MBIT PARALLEL 165FBGA	44
S25FL256SDPMFIG01 IR (Infineon Technologies)	IC FLASH 256MBIT SPI/QUAD 16SOIC	90
CY7C1314CV18-250BZC IR (Infineon Technologies)	IC SRAM 18MBIT PARALLEL 165FBGA	154
CY62148G30-45ZSXI IR (Infineon Technologies)	IC SRAM 4MBIT PARALLEL 32TSOP II	80
S29GL256S90TFA010 IR (Infineon Technologies)	IC FLASH 256MBIT PARALLEL 56TSOP	135
CY62157ESL-45ZSXIT IR (Infineon Technologies)	IC SRAM 8MBIT PARALLEL 44TSOP II	1531

Memory

1. Overview

Memory integrated circuits (ICs) are semiconductor devices used for storing digital data in electronic systems. As fundamental components of modern electronics, they enable data retention and retrieval in computers, mobile devices, industrial equipment, and automotive systems. Memory ICs are categorized into volatile (requires power to retain data) and non-volatile (retains data without power) types, playing critical roles in system performance, storage capacity, and energy efficiency.

2. Major Types and Functional Classification

Type	Functional Characteristics	Application Examples
DRAM (Dynamic RAM)	High-density, low-cost, requires periodic refresh	PCs, Servers, Graphics Cards
NAND Flash	Non-volatile, high endurance, block-level access	SSDs, USB Drives, Mobile Storage
SRAM (Static RAM)	High-speed, low density, no refresh required	Cache Memory, Networking Equipment
NOR Flash	Random access, execute-in-place capability	Embedded Systems, Automotive ECUs
MRAM (Magnetoresistive RAM)	Non-volatile, unlimited endurance, low power	IoT Devices, Industrial Sensors

3. Structure and Composition

Memory ICs typically consist of:

Storage Cell Array: Matrix of memory cells (transistors/capacitors for DRAM, floating-gate transistors for Flash)
Address Decoder: Selects specific memory locations
I/O Circuits: Data input/output interfaces
Control Logic: Manages read/write operations and timing
Power Management Units: Optimizes energy consumption

Advanced packages include BGA (Ball Grid Array) and 3D-stacked configurations for density optimization.

4. Key Technical Specifications

Parameter	Description	Importance
Storage Capacity	Data volume (Gb/GiB)	Determines system memory limits
Access Time	ns/predictable latency	Impacts processing speed
Power Consumption	mW/MHz	Affects battery life and thermal design
Endurance	P/E cycles (Flash)	Dictates product lifespan
Data Retention	Years (non-volatile)	Critical for long-term storage

5. Application Areas

Consumer Electronics: Smartphones (NAND Flash), Gaming Consoles (GDDR6)
Industrial Automation: PLCs (SRAM), Data Loggers (MRAM)
Automotive Systems: ADAS (LPDDR5), Infotainment (eMMC)
Enterprise Storage: SSD Controllers (3D NAND), Servers (RDIMM)

6. Leading Manufacturers and Products

Manufacturer	Representative Products
Samsung Electronics	V-NAND (9x-layer), LPDDR5X
SK hynix	HBM3 (8GB/s bandwidth), GDDR6
Microchip Technology	Serial NOR Flash (SST26)
Kioxia Corporation	BiCS FLASH (3D NAND)
Infineon Technologies	MRAM (40nm process)

7. Selection Recommendations

Key considerations:

Match memory type to application requirements (e.g., NOR Flash for code storage)
Evaluate bandwidth vs. latency tradeoffs
Analyze temperature and vibration specifications
Assess long-term supply stability
Optimize cost-per-bit metrics

Case Study: A smartphone manufacturer selected UFS 3.1 (NAND-based) for 2100MB/s read speeds, improving app launch times by 35%.

8. Industry Trends

Future directions include:

3D NAND scaling beyond 200 layers
Emerging memories (ReRAM, PCM) for AI acceleration
Package-on-Package (PoP) integration
AI-optimized memory architectures (Processing-in-Memory)
Green manufacturing processes (EUV lithography)