Memory

Part Number	Description / PDF	Quantity
CY7C1548KV18-450BZI IR (Infineon Technologies)	IC SRAM 72MBIT PARALLEL 165FBGA	537
CY7C1163KV18-550BZC IR (Infineon Technologies)	IC SRAM 18MBIT PARALLEL 165FBGA	273
CY7C1170V18-400BZXC IR (Infineon Technologies)	IC SRAM 18MBIT PARALLEL 165FBGA	443
CY7C2170KV18-550BZXC IR (Infineon Technologies)	DDR SRAM, 512KX36, 0.45NS PBGA16	219
CY7C1518KV18-300BZXI IR (Infineon Technologies)	DDR SRAM, 4MX18, 0.45NS PBGA165	48
CY62256NL-70SNXC IR (Infineon Technologies)	IC SRAM 256KBIT PARALLEL 28SOIC	3956
CY7C1364C-166BZI IR (Infineon Technologies)	IC SRAM 9MBIT PARALLEL 165FBGA	1799
CY7C1313BV18-200BZC IR (Infineon Technologies)	IC SRAM 18MBIT PARALLEL 165FBGA	399
CY7C1550KV18-450BZC IR (Infineon Technologies)	IC SRAM 72MBIT PARALLEL 165FBGA	1135
CY7C25652KV18-400BZXI IR (Infineon Technologies)	IC SRAM 72MBIT PARALLEL 165FBGA	121
CY7C1415SV18-250BZC IR (Infineon Technologies)	IC SRAM 36MBIT PARALLEL 165FBGA	174
CY7C1463AV33-133AXI IR (Infineon Technologies)	IC SRAM 36MBIT PARALLEL 100TQFP	337
CY7C1387D-167AXC IR (Infineon Technologies)	IC SRAM 18MBIT PARALLEL 100TQFP	348
CY7C1514V18-200BZC IR (Infineon Technologies)	IC SRAM 72MBIT PARALLEL 165FBGA	122
CY7C1462BV25-250AXC IR (Infineon Technologies)	ZBT SRAM, 2MX18, 2.6NS PQFP100	508
CY7C199CL-15VXC IR (Infineon Technologies)	IC SRAM 256KBIT PARALLEL 28SOJ	2817
CY7C1168KV18-450BZXC IR (Infineon Technologies)	IC SRAM 18MBIT PARALLEL 165FBGA	581
CY7C1318KV18-333BZC IR (Infineon Technologies)	IC SRAM 18MBIT PARALLEL 165FBGA	1911
CY7C1425KV18-300BZC IR (Infineon Technologies)	IC SRAM 36MBIT PARALLEL 165FBGA	364
CYDMX064A16-90BVXI IR (Infineon Technologies)	IC SRAM 64KBIT PARALLEL 100VFBGA	3917

Memory

1. Overview

Memory integrated circuits (ICs) are semiconductor devices used for storing digital data in electronic systems. As fundamental components of modern electronics, they enable data retention and retrieval in computers, mobile devices, industrial equipment, and automotive systems. Memory ICs are categorized into volatile (requires power to retain data) and non-volatile (retains data without power) types, playing critical roles in system performance, storage capacity, and energy efficiency.

2. Major Types and Functional Classification

Type	Functional Characteristics	Application Examples
DRAM (Dynamic RAM)	High-density, low-cost, requires periodic refresh	PCs, Servers, Graphics Cards
NAND Flash	Non-volatile, high endurance, block-level access	SSDs, USB Drives, Mobile Storage
SRAM (Static RAM)	High-speed, low density, no refresh required	Cache Memory, Networking Equipment
NOR Flash	Random access, execute-in-place capability	Embedded Systems, Automotive ECUs
MRAM (Magnetoresistive RAM)	Non-volatile, unlimited endurance, low power	IoT Devices, Industrial Sensors

3. Structure and Composition

Memory ICs typically consist of:

Storage Cell Array: Matrix of memory cells (transistors/capacitors for DRAM, floating-gate transistors for Flash)
Address Decoder: Selects specific memory locations
I/O Circuits: Data input/output interfaces
Control Logic: Manages read/write operations and timing
Power Management Units: Optimizes energy consumption

Advanced packages include BGA (Ball Grid Array) and 3D-stacked configurations for density optimization.

4. Key Technical Specifications

Parameter	Description	Importance
Storage Capacity	Data volume (Gb/GiB)	Determines system memory limits
Access Time	ns/predictable latency	Impacts processing speed
Power Consumption	mW/MHz	Affects battery life and thermal design
Endurance	P/E cycles (Flash)	Dictates product lifespan
Data Retention	Years (non-volatile)	Critical for long-term storage

5. Application Areas

Consumer Electronics: Smartphones (NAND Flash), Gaming Consoles (GDDR6)
Industrial Automation: PLCs (SRAM), Data Loggers (MRAM)
Automotive Systems: ADAS (LPDDR5), Infotainment (eMMC)
Enterprise Storage: SSD Controllers (3D NAND), Servers (RDIMM)

6. Leading Manufacturers and Products

Manufacturer	Representative Products
Samsung Electronics	V-NAND (9x-layer), LPDDR5X
SK hynix	HBM3 (8GB/s bandwidth), GDDR6
Microchip Technology	Serial NOR Flash (SST26)
Kioxia Corporation	BiCS FLASH (3D NAND)
Infineon Technologies	MRAM (40nm process)

7. Selection Recommendations

Key considerations:

Match memory type to application requirements (e.g., NOR Flash for code storage)
Evaluate bandwidth vs. latency tradeoffs
Analyze temperature and vibration specifications
Assess long-term supply stability
Optimize cost-per-bit metrics

Case Study: A smartphone manufacturer selected UFS 3.1 (NAND-based) for 2100MB/s read speeds, improving app launch times by 35%.

8. Industry Trends

Future directions include:

3D NAND scaling beyond 200 layers
Emerging memories (ReRAM, PCM) for AI acceleration
Package-on-Package (PoP) integration
AI-optimized memory architectures (Processing-in-Memory)
Green manufacturing processes (EUV lithography)