Memory

Part Number	Description / PDF	Quantity
CY7C026A-15AXC IR (Infineon Technologies)	IC SRAM 256KBIT PARALLEL 100TQFP	49
CY7C1470V25-167AXC IR (Infineon Technologies)	IC SRAM 72MBIT PARALLEL 100TQFP	120
CY62256LL-70SNC IR (Infineon Technologies)	IC SRAM 256KBIT PARALLEL 28SOIC	9655
CY7C199C-20ZI IR (Infineon Technologies)	IC SRAM 256KBIT PAR 28TSOP I	0
CY7C10211BN-10ZXC IR (Infineon Technologies)	IC SRAM 1MBIT PARALLEL 44TSOP II	0
CY14B101L-SZ35XC IR (Infineon Technologies)	IC NVSRAM 1MBIT PARALLEL 32SOIC	2865
CY7C0832AV-133AXI IR (Infineon Technologies)	IC SRAM 4.5MBIT PARALLEL 120TQFP	0
CY7C1354SV25-200AXC IR (Infineon Technologies)	IC SRAM 9MBIT PARALLEL 100TQFP	426
CY62147EV18LL-55BVXIT IR (Infineon Technologies)	IC SRAM 4MBIT PARALLEL 48VFBGA	12000
CY7C09349AV-12AC IR (Infineon Technologies)	IC SRAM 72KBIT PARALLEL 100TQFP	0
CY62148ESL-55ZAXI IR (Infineon Technologies)	IC SRAM 4MBIT PARALLEL 32STSOP	2347
CY7C1019CV33-12ZXCT IR (Infineon Technologies)	IC SRAM 1MBIT PARALLEL 32TSOP II	0
CY62147G30-45BVXI IR (Infineon Technologies)	STANDARD SRAM, 256KX16, 45NS PBG	295
CY7C1049CV33-15VC IR (Infineon Technologies)	IC SRAM 4MBIT PARALLEL 36SOJ	338
CY7C1418TV18-267BZXC IR (Infineon Technologies)	IC SRAM 36MBIT PARALLEL 165FBGA	240
CY7C1393BV18-250BZI IR (Infineon Technologies)	IC SRAM 18MBIT PARALLEL 165FBGA	1297
CY7C2568KV18-500BZC IR (Infineon Technologies)	IC SRAM 72MBIT PARALLEL 165FBGA	16
CY7C1512V18-250BZXC IR (Infineon Technologies)	IC SRAM 72MBIT PARALLEL 165FBGA	1089
CY62128BNLL-70ZAXET IR (Infineon Technologies)	IC SRAM 1MBIT 70NS 32STSOP	4500
CY7C2270XV18-633BZXC IR (Infineon Technologies)	IC SRAM 36MBIT PARALLEL 165FBGA	523

Memory

1. Overview

Memory integrated circuits (ICs) are semiconductor devices used for storing digital data in electronic systems. As fundamental components of modern electronics, they enable data retention and retrieval in computers, mobile devices, industrial equipment, and automotive systems. Memory ICs are categorized into volatile (requires power to retain data) and non-volatile (retains data without power) types, playing critical roles in system performance, storage capacity, and energy efficiency.

2. Major Types and Functional Classification

Type	Functional Characteristics	Application Examples
DRAM (Dynamic RAM)	High-density, low-cost, requires periodic refresh	PCs, Servers, Graphics Cards
NAND Flash	Non-volatile, high endurance, block-level access	SSDs, USB Drives, Mobile Storage
SRAM (Static RAM)	High-speed, low density, no refresh required	Cache Memory, Networking Equipment
NOR Flash	Random access, execute-in-place capability	Embedded Systems, Automotive ECUs
MRAM (Magnetoresistive RAM)	Non-volatile, unlimited endurance, low power	IoT Devices, Industrial Sensors

3. Structure and Composition

Memory ICs typically consist of:

Storage Cell Array: Matrix of memory cells (transistors/capacitors for DRAM, floating-gate transistors for Flash)
Address Decoder: Selects specific memory locations
I/O Circuits: Data input/output interfaces
Control Logic: Manages read/write operations and timing
Power Management Units: Optimizes energy consumption

Advanced packages include BGA (Ball Grid Array) and 3D-stacked configurations for density optimization.

4. Key Technical Specifications

Parameter	Description	Importance
Storage Capacity	Data volume (Gb/GiB)	Determines system memory limits
Access Time	ns/predictable latency	Impacts processing speed
Power Consumption	mW/MHz	Affects battery life and thermal design
Endurance	P/E cycles (Flash)	Dictates product lifespan
Data Retention	Years (non-volatile)	Critical for long-term storage

5. Application Areas

Consumer Electronics: Smartphones (NAND Flash), Gaming Consoles (GDDR6)
Industrial Automation: PLCs (SRAM), Data Loggers (MRAM)
Automotive Systems: ADAS (LPDDR5), Infotainment (eMMC)
Enterprise Storage: SSD Controllers (3D NAND), Servers (RDIMM)

6. Leading Manufacturers and Products

Manufacturer	Representative Products
Samsung Electronics	V-NAND (9x-layer), LPDDR5X
SK hynix	HBM3 (8GB/s bandwidth), GDDR6
Microchip Technology	Serial NOR Flash (SST26)
Kioxia Corporation	BiCS FLASH (3D NAND)
Infineon Technologies	MRAM (40nm process)

7. Selection Recommendations

Key considerations:

Match memory type to application requirements (e.g., NOR Flash for code storage)
Evaluate bandwidth vs. latency tradeoffs
Analyze temperature and vibration specifications
Assess long-term supply stability
Optimize cost-per-bit metrics

Case Study: A smartphone manufacturer selected UFS 3.1 (NAND-based) for 2100MB/s read speeds, improving app launch times by 35%.

8. Industry Trends

Future directions include:

3D NAND scaling beyond 200 layers
Emerging memories (ReRAM, PCM) for AI acceleration
Package-on-Package (PoP) integration
AI-optimized memory architectures (Processing-in-Memory)
Green manufacturing processes (EUV lithography)