Memory

Part Number	Description / PDF	Quantity
CY7C2268KV18-450BZC IR (Infineon Technologies)	IC SRAM 36MBIT PARALLEL 165FBGA	624
CY7C1318BV18-167BZC IR (Infineon Technologies)	IC SRAM 18MBIT PARALLEL 165FBGA	334
CYDC128B08-55AXI IR (Infineon Technologies)	IC SRAM 128KBIT PARALLEL 100TQFP	2520
CY7C2565KV18-400BZXC IR (Infineon Technologies)	IC SRAM 72MBIT PARALLEL 165FBGA	89
CY7C09289V-9AC IR (Infineon Technologies)	IC SRAM 1MBIT PARALLEL 100TQFP	187
S25FL128SAGBHBB00 IR (Infineon Technologies)	IC FLASH 128MBIT SPI/QUAD 24BGA	270
CY62126DV30L-55BVXE IR (Infineon Technologies)	IC SRAM 1MBIT PARALLEL 48VFBGA	860
CY7C1570KV18-550BZXC IR (Infineon Technologies)	IC SRAM 72MBIT PARALLEL 165FBGA	218
CY62128EV30LL-55ZXE IR (Infineon Technologies)	STANDARD SRAM, 128KX8, 55NS PDSO	3574
CY7C1525KV18-250BZC IR (Infineon Technologies)	IC SRAM 72MBIT PARALLEL 165FBGA	161
CYD09S72V18-200BGXI IR (Infineon Technologies)	IC SRAM 9MBIT PARALLEL 484FBGA	74
CY7C1474V33-200BGC IR (Infineon Technologies)	IC SRAM 72MBIT PARALLEL 209FBGA	636
CY7C1423KV18-250BZC IR (Infineon Technologies)	DDR SRAM, 2MX18, 0.45NS, CMOS, P	202
CY14B101L-SP45XC IR (Infineon Technologies)	IC NVSRAM 1MBIT PARALLEL 48SSOP	0
CY7C1412BV18-250BZXC IR (Infineon Technologies)	IC SRAM 36MBIT PARALLEL 165FBGA	181
CY7C1314SV18-200BZC IR (Infineon Technologies)	IC SRAM 18MBIT PARALLEL 165FBGA	328
CY7C1512V18-200BZXI IR (Infineon Technologies)	IC SRAM 72MBIT PARALLEL 165FBGA	1193
CY7C2168KV18-550BZC IR (Infineon Technologies)	IC SRAM 18MBIT PARALLEL 165FBGA	516
CY7C1412TV18-200BZC IR (Infineon Technologies)	IC SRAM 36MBIT PARALLEL 165FBGA	439
CY7C1061AV33-10BAXI IR (Infineon Technologies)	IC SRAM 16MBIT PARALLEL 60FBGA	0

Memory

1. Overview

Memory integrated circuits (ICs) are semiconductor devices used for storing digital data in electronic systems. As fundamental components of modern electronics, they enable data retention and retrieval in computers, mobile devices, industrial equipment, and automotive systems. Memory ICs are categorized into volatile (requires power to retain data) and non-volatile (retains data without power) types, playing critical roles in system performance, storage capacity, and energy efficiency.

2. Major Types and Functional Classification

Type	Functional Characteristics	Application Examples
DRAM (Dynamic RAM)	High-density, low-cost, requires periodic refresh	PCs, Servers, Graphics Cards
NAND Flash	Non-volatile, high endurance, block-level access	SSDs, USB Drives, Mobile Storage
SRAM (Static RAM)	High-speed, low density, no refresh required	Cache Memory, Networking Equipment
NOR Flash	Random access, execute-in-place capability	Embedded Systems, Automotive ECUs
MRAM (Magnetoresistive RAM)	Non-volatile, unlimited endurance, low power	IoT Devices, Industrial Sensors

3. Structure and Composition

Memory ICs typically consist of:

Storage Cell Array: Matrix of memory cells (transistors/capacitors for DRAM, floating-gate transistors for Flash)
Address Decoder: Selects specific memory locations
I/O Circuits: Data input/output interfaces
Control Logic: Manages read/write operations and timing
Power Management Units: Optimizes energy consumption

Advanced packages include BGA (Ball Grid Array) and 3D-stacked configurations for density optimization.

4. Key Technical Specifications

Parameter	Description	Importance
Storage Capacity	Data volume (Gb/GiB)	Determines system memory limits
Access Time	ns/predictable latency	Impacts processing speed
Power Consumption	mW/MHz	Affects battery life and thermal design
Endurance	P/E cycles (Flash)	Dictates product lifespan
Data Retention	Years (non-volatile)	Critical for long-term storage

5. Application Areas

Consumer Electronics: Smartphones (NAND Flash), Gaming Consoles (GDDR6)
Industrial Automation: PLCs (SRAM), Data Loggers (MRAM)
Automotive Systems: ADAS (LPDDR5), Infotainment (eMMC)
Enterprise Storage: SSD Controllers (3D NAND), Servers (RDIMM)

6. Leading Manufacturers and Products

Manufacturer	Representative Products
Samsung Electronics	V-NAND (9x-layer), LPDDR5X
SK hynix	HBM3 (8GB/s bandwidth), GDDR6
Microchip Technology	Serial NOR Flash (SST26)
Kioxia Corporation	BiCS FLASH (3D NAND)
Infineon Technologies	MRAM (40nm process)

7. Selection Recommendations

Key considerations:

Match memory type to application requirements (e.g., NOR Flash for code storage)
Evaluate bandwidth vs. latency tradeoffs
Analyze temperature and vibration specifications
Assess long-term supply stability
Optimize cost-per-bit metrics

Case Study: A smartphone manufacturer selected UFS 3.1 (NAND-based) for 2100MB/s read speeds, improving app launch times by 35%.

8. Industry Trends

Future directions include:

3D NAND scaling beyond 200 layers
Emerging memories (ReRAM, PCM) for AI acceleration
Package-on-Package (PoP) integration
AI-optimized memory architectures (Processing-in-Memory)
Green manufacturing processes (EUV lithography)