Memory

Part Number	Description / PDF	Quantity
CY7C1518KV18-300BZXC IR (Infineon Technologies)	IC SRAM 72MBIT PARALLEL 165FBGA	154
CY7C1568KV18-450BZXC IR (Infineon Technologies)	IC SRAM 72MBIT PARALLEL 165FBGA	645
CY7C1420BV18-250BZC IR (Infineon Technologies)	IC SRAM 36MBIT PARALLEL 165FBGA	508
CY7C1021BV33L-15ZXC IR (Infineon Technologies)	IC SRAM 1MBIT PARALLEL 44TSOP II	0
CY7C1414BV18-250BZC IR (Infineon Technologies)	IC SRAM 36MBIT PARALLEL 165FBGA	2704
CY7C1470V33-167BZI IR (Infineon Technologies)	ZBT SRAM, 2MX36, 3.4NS PBGA165	2
FM25V20-PG IR (Infineon Technologies)	IC FRAM 2MBIT SPI 40MHZ 8DIP	3370
CY7C1325S-100AXI IR (Infineon Technologies)	IC SRAM 4.5MBIT PARALLEL 100TQFP	195
CY7C0251-25AXC IR (Infineon Technologies)	IC SRAM 144K PARALLEL 100TQFP	0
S25FL164K0XBHIS20 IR (Infineon Technologies)	IC FLASH 64MBIT SPI/QUAD 24BGA	0
CY7C1568KV18-400BZXI IR (Infineon Technologies)	IC SRAM 72MBIT PARALLEL 165FBGA	690
CY14MB064Q1B-SXI IR (Infineon Technologies)	NON-VOLATILE SRAM, 8KX8, CMOS, P	438
CY7C1041CV33-10BAJXE IR (Infineon Technologies)	IC SRAM 4MBIT PARALLEL 48FBGA	574
S29GL256S11TFIV20 IR (Infineon Technologies)	IC FLASH 256MBIT PARALLEL 56TSOP	145
CY7C1515V18-250BZC IR (Infineon Technologies)	IC SRAM 72MBIT PARALLEL 165FBGA	216
CY7C1041BNV33L-12VXC IR (Infineon Technologies)	IC SRAM 4MBIT PARALLEL 44SOJ	281
CY7C1362S-200AXC IR (Infineon Technologies)	IC SRAM 9MBIT PARALLEL 100TQFP	1052
CY7C1565KV18-450BZC IR (Infineon Technologies)	IC SRAM 72MBIT PARALLEL 165FBGA	64
CY7C1570KV18-500BZXC IR (Infineon Technologies)	IC SRAM 72MBIT PARALLEL 165FBGA	295
CY62128DV30LL-70SXI IR (Infineon Technologies)	IC SRAM 1MBIT PARALLEL 32SOIC	601

Memory

1. Overview

Memory integrated circuits (ICs) are semiconductor devices used for storing digital data in electronic systems. As fundamental components of modern electronics, they enable data retention and retrieval in computers, mobile devices, industrial equipment, and automotive systems. Memory ICs are categorized into volatile (requires power to retain data) and non-volatile (retains data without power) types, playing critical roles in system performance, storage capacity, and energy efficiency.

2. Major Types and Functional Classification

Type	Functional Characteristics	Application Examples
DRAM (Dynamic RAM)	High-density, low-cost, requires periodic refresh	PCs, Servers, Graphics Cards
NAND Flash	Non-volatile, high endurance, block-level access	SSDs, USB Drives, Mobile Storage
SRAM (Static RAM)	High-speed, low density, no refresh required	Cache Memory, Networking Equipment
NOR Flash	Random access, execute-in-place capability	Embedded Systems, Automotive ECUs
MRAM (Magnetoresistive RAM)	Non-volatile, unlimited endurance, low power	IoT Devices, Industrial Sensors

3. Structure and Composition

Memory ICs typically consist of:

Storage Cell Array: Matrix of memory cells (transistors/capacitors for DRAM, floating-gate transistors for Flash)
Address Decoder: Selects specific memory locations
I/O Circuits: Data input/output interfaces
Control Logic: Manages read/write operations and timing
Power Management Units: Optimizes energy consumption

Advanced packages include BGA (Ball Grid Array) and 3D-stacked configurations for density optimization.

4. Key Technical Specifications

Parameter	Description	Importance
Storage Capacity	Data volume (Gb/GiB)	Determines system memory limits
Access Time	ns/predictable latency	Impacts processing speed
Power Consumption	mW/MHz	Affects battery life and thermal design
Endurance	P/E cycles (Flash)	Dictates product lifespan
Data Retention	Years (non-volatile)	Critical for long-term storage

5. Application Areas

Consumer Electronics: Smartphones (NAND Flash), Gaming Consoles (GDDR6)
Industrial Automation: PLCs (SRAM), Data Loggers (MRAM)
Automotive Systems: ADAS (LPDDR5), Infotainment (eMMC)
Enterprise Storage: SSD Controllers (3D NAND), Servers (RDIMM)

6. Leading Manufacturers and Products

Manufacturer	Representative Products
Samsung Electronics	V-NAND (9x-layer), LPDDR5X
SK hynix	HBM3 (8GB/s bandwidth), GDDR6
Microchip Technology	Serial NOR Flash (SST26)
Kioxia Corporation	BiCS FLASH (3D NAND)
Infineon Technologies	MRAM (40nm process)

7. Selection Recommendations

Key considerations:

Match memory type to application requirements (e.g., NOR Flash for code storage)
Evaluate bandwidth vs. latency tradeoffs
Analyze temperature and vibration specifications
Assess long-term supply stability
Optimize cost-per-bit metrics

Case Study: A smartphone manufacturer selected UFS 3.1 (NAND-based) for 2100MB/s read speeds, improving app launch times by 35%.

8. Industry Trends

Future directions include:

3D NAND scaling beyond 200 layers
Emerging memories (ReRAM, PCM) for AI acceleration
Package-on-Package (PoP) integration
AI-optimized memory architectures (Processing-in-Memory)
Green manufacturing processes (EUV lithography)