Memory

Part Number	Description / PDF	Quantity
CY7C1365C-133BZI IR (Infineon Technologies)	CACHE SRAM, 256KX32, 6.5NS, CMOS	1932
CY7C1320CV18-167BZC IR (Infineon Technologies)	IC SRAM 18MBIT PARALLEL 165FBGA	591
CY62157DV30L-55BVXE IR (Infineon Technologies)	IC SRAM 8MBIT PARALLEL 48VFBGA	3935
CY7C1472V25-250BZC IR (Infineon Technologies)	IC SRAM 72MBIT PARALLEL 165FBGA	308
CY7C1413JV18-250BZXC IR (Infineon Technologies)	IC SRAM 36MBIT PARALLEL 165FBGA	117
CY62137FV30LL-55ZSXE IR (Infineon Technologies)	IC SRAM 2MBIT PARALLEL 44TSOP II	11270
CY7C1021BNV33L-15VXI IR (Infineon Technologies)	IC SRAM 1MBIT PARALLEL 44SOJ	10163
CY7C1020CV33-15ZXC IR (Infineon Technologies)	IC SRAM 512KBIT PAR 44TSOP II	0
CY7C1474V33-167BGC IR (Infineon Technologies)	IC SRAM 72MBIT PARALLEL 209FBGA	483
CY7C1565V18-400BZI IR (Infineon Technologies)	IC SRAM 72MBIT PARALLEL 165FBGA	266
CY7C2563KV18-450BZXI IR (Infineon Technologies)	IC SRAM 72MBIT PARALLEL 165FBGA	406
CY7C2270XV18-600BZXC IR (Infineon Technologies)	IC SRAM 36MBIT PARALLEL 165FBGA	130
CY7C1049GE30-10ZSXI IR (Infineon Technologies)	STANDARD SRAM, 512KX8, 10NS, CMO	0
CY7C1460AV25-250AXC IR (Infineon Technologies)	IC SRAM 36MBIT PARALLEL 100TQFP	11
CY7C1614KV18-333BZC IR (Infineon Technologies)	QDR SRAM, 4MX36, 0.45NS, CMOS, P	108
CY7C026AV-25AC IR (Infineon Technologies)	IC SRAM 256KBIT PARALLEL 100TQFP	89
CY7C15632KV18-400BZXI IR (Infineon Technologies)	IC SRAM 72MBIT PARALLEL 165FBGA	623
CY7C1350S-133AXC IR (Infineon Technologies)	IC SRAM 4.5MBIT 133MHZ 100LQFP	640
CY7C1470BV25-167BZC IR (Infineon Technologies)	IC SRAM 72MBIT PARALLEL 165FBGA	104
CY7C1314KV18-250BZXC IR (Infineon Technologies)	QDR SRAM, 512KX36, 0.45NS PBGA16	202

Memory

1. Overview

Memory integrated circuits (ICs) are semiconductor devices used for storing digital data in electronic systems. As fundamental components of modern electronics, they enable data retention and retrieval in computers, mobile devices, industrial equipment, and automotive systems. Memory ICs are categorized into volatile (requires power to retain data) and non-volatile (retains data without power) types, playing critical roles in system performance, storage capacity, and energy efficiency.

2. Major Types and Functional Classification

Type	Functional Characteristics	Application Examples
DRAM (Dynamic RAM)	High-density, low-cost, requires periodic refresh	PCs, Servers, Graphics Cards
NAND Flash	Non-volatile, high endurance, block-level access	SSDs, USB Drives, Mobile Storage
SRAM (Static RAM)	High-speed, low density, no refresh required	Cache Memory, Networking Equipment
NOR Flash	Random access, execute-in-place capability	Embedded Systems, Automotive ECUs
MRAM (Magnetoresistive RAM)	Non-volatile, unlimited endurance, low power	IoT Devices, Industrial Sensors

3. Structure and Composition

Memory ICs typically consist of:

Storage Cell Array: Matrix of memory cells (transistors/capacitors for DRAM, floating-gate transistors for Flash)
Address Decoder: Selects specific memory locations
I/O Circuits: Data input/output interfaces
Control Logic: Manages read/write operations and timing
Power Management Units: Optimizes energy consumption

Advanced packages include BGA (Ball Grid Array) and 3D-stacked configurations for density optimization.

4. Key Technical Specifications

Parameter	Description	Importance
Storage Capacity	Data volume (Gb/GiB)	Determines system memory limits
Access Time	ns/predictable latency	Impacts processing speed
Power Consumption	mW/MHz	Affects battery life and thermal design
Endurance	P/E cycles (Flash)	Dictates product lifespan
Data Retention	Years (non-volatile)	Critical for long-term storage

5. Application Areas

Consumer Electronics: Smartphones (NAND Flash), Gaming Consoles (GDDR6)
Industrial Automation: PLCs (SRAM), Data Loggers (MRAM)
Automotive Systems: ADAS (LPDDR5), Infotainment (eMMC)
Enterprise Storage: SSD Controllers (3D NAND), Servers (RDIMM)

6. Leading Manufacturers and Products

Manufacturer	Representative Products
Samsung Electronics	V-NAND (9x-layer), LPDDR5X
SK hynix	HBM3 (8GB/s bandwidth), GDDR6
Microchip Technology	Serial NOR Flash (SST26)
Kioxia Corporation	BiCS FLASH (3D NAND)
Infineon Technologies	MRAM (40nm process)

7. Selection Recommendations

Key considerations:

Match memory type to application requirements (e.g., NOR Flash for code storage)
Evaluate bandwidth vs. latency tradeoffs
Analyze temperature and vibration specifications
Assess long-term supply stability
Optimize cost-per-bit metrics

Case Study: A smartphone manufacturer selected UFS 3.1 (NAND-based) for 2100MB/s read speeds, improving app launch times by 35%.

8. Industry Trends

Future directions include:

3D NAND scaling beyond 200 layers
Emerging memories (ReRAM, PCM) for AI acceleration
Package-on-Package (PoP) integration
AI-optimized memory architectures (Processing-in-Memory)
Green manufacturing processes (EUV lithography)