Memory

Part Number	Description / PDF	Quantity
CY7C1024DV33-10BGXI IR (Infineon Technologies)	STANDARD SRAM, 128KX24, 10NS PBG	3357
CY7C199C-15ZC IR (Infineon Technologies)	IC SRAM 256KBIT PAR 28TSOP I	47280
FM25040B-G IR (Infineon Technologies)	IC FRAM 4KBIT SPI 20MHZ 8SOIC	11
CY14ME064J2A-SXI IR (Infineon Technologies)	IC NVSRAM 64KBIT I2C 8SOIC	1105
S29PL032J70BFI120 IR (Infineon Technologies)	IC FLASH 32MBIT PARALLEL 48FBGA	0
CY14ME064Q1A-SXI IR (Infineon Technologies)	IC NVSRAM 64KBIT 40MHZ 8SOIC	2124
CY7C1370DV25-200BZC IR (Infineon Technologies)	IC SRAM 18MBIT PARALLEL 165FBGA	373
CY7C1021BNL-15ZXI IR (Infineon Technologies)	IC SRAM 1MBIT PARALLEL 44TSOP II	133
CY7C1614KV18-250BZI IR (Infineon Technologies)	QDR SRAM, 4MX36, 0.45NS PBGA165	100
CY7C2570KV18-500BZC IR (Infineon Technologies)	IC SRAM 72MBIT PARALLEL 165FBGA	16
CY62147GE30-45ZSXI IR (Infineon Technologies)	IC SRAM 4MBIT PARALLEL 44TSOP II	85
CY7C1355S-133AXC IR (Infineon Technologies)	IC SRAM 9MBIT PARALLEL 100TQFP	718
CYD09S72V18-200BBXI IR (Infineon Technologies)	IC SRAM 9MBIT PARALLEL 256FBGA	94
CY62128BNLL-55ZXI IR (Infineon Technologies)	IC SRAM 1MBIT PARALLEL 32TSOP I	213
CY7C0241-25AXC IR (Infineon Technologies)	IC SRAM 72KBIT PARALLEL 100TQFP	4501
S25FL132K0XBHI030 IR (Infineon Technologies)	FLASH, 8MX4, PBGA24	1630
CY7C1520V18-200BZC IR (Infineon Technologies)	IC SRAM 72MBIT PARALLEL 165FBGA	600
S25FL064P0XBHIS30 IR (Infineon Technologies)	IC FLASH 64MBIT SPI/QUAD 24BGA	0
CY14B256L-SZ35XCT IR (Infineon Technologies)	IC NVSRAM 256KBIT PAR 32SOIC	7794
CY7C1471BV33-117AXC IR (Infineon Technologies)	IC SRAM 72MBIT PARALLEL 100TQFP	648

Memory

1. Overview

Memory integrated circuits (ICs) are semiconductor devices used for storing digital data in electronic systems. As fundamental components of modern electronics, they enable data retention and retrieval in computers, mobile devices, industrial equipment, and automotive systems. Memory ICs are categorized into volatile (requires power to retain data) and non-volatile (retains data without power) types, playing critical roles in system performance, storage capacity, and energy efficiency.

2. Major Types and Functional Classification

Type	Functional Characteristics	Application Examples
DRAM (Dynamic RAM)	High-density, low-cost, requires periodic refresh	PCs, Servers, Graphics Cards
NAND Flash	Non-volatile, high endurance, block-level access	SSDs, USB Drives, Mobile Storage
SRAM (Static RAM)	High-speed, low density, no refresh required	Cache Memory, Networking Equipment
NOR Flash	Random access, execute-in-place capability	Embedded Systems, Automotive ECUs
MRAM (Magnetoresistive RAM)	Non-volatile, unlimited endurance, low power	IoT Devices, Industrial Sensors

3. Structure and Composition

Memory ICs typically consist of:

Storage Cell Array: Matrix of memory cells (transistors/capacitors for DRAM, floating-gate transistors for Flash)
Address Decoder: Selects specific memory locations
I/O Circuits: Data input/output interfaces
Control Logic: Manages read/write operations and timing
Power Management Units: Optimizes energy consumption

Advanced packages include BGA (Ball Grid Array) and 3D-stacked configurations for density optimization.

4. Key Technical Specifications

Parameter	Description	Importance
Storage Capacity	Data volume (Gb/GiB)	Determines system memory limits
Access Time	ns/predictable latency	Impacts processing speed
Power Consumption	mW/MHz	Affects battery life and thermal design
Endurance	P/E cycles (Flash)	Dictates product lifespan
Data Retention	Years (non-volatile)	Critical for long-term storage

5. Application Areas

Consumer Electronics: Smartphones (NAND Flash), Gaming Consoles (GDDR6)
Industrial Automation: PLCs (SRAM), Data Loggers (MRAM)
Automotive Systems: ADAS (LPDDR5), Infotainment (eMMC)
Enterprise Storage: SSD Controllers (3D NAND), Servers (RDIMM)

6. Leading Manufacturers and Products

Manufacturer	Representative Products
Samsung Electronics	V-NAND (9x-layer), LPDDR5X
SK hynix	HBM3 (8GB/s bandwidth), GDDR6
Microchip Technology	Serial NOR Flash (SST26)
Kioxia Corporation	BiCS FLASH (3D NAND)
Infineon Technologies	MRAM (40nm process)

7. Selection Recommendations

Key considerations:

Match memory type to application requirements (e.g., NOR Flash for code storage)
Evaluate bandwidth vs. latency tradeoffs
Analyze temperature and vibration specifications
Assess long-term supply stability
Optimize cost-per-bit metrics

Case Study: A smartphone manufacturer selected UFS 3.1 (NAND-based) for 2100MB/s read speeds, improving app launch times by 35%.

8. Industry Trends

Future directions include:

3D NAND scaling beyond 200 layers
Emerging memories (ReRAM, PCM) for AI acceleration
Package-on-Package (PoP) integration
AI-optimized memory architectures (Processing-in-Memory)
Green manufacturing processes (EUV lithography)