Memory

Part Number	Description / PDF	Quantity
STK14D88-RF35 IR (Infineon Technologies)	IC NVSRAM 256KBIT PAR 48SSOP	109
S27KS0641DPBHA020 IR (Infineon Technologies)	PARALLEL NOR HYPERFLASH, 64MB (8	270
CY7C1413KV18-300BZC IR (Infineon Technologies)	QDR SRAM, 2MX18, 0.45NS, CMOS, P	25
STK11C68-5L55M IR (Infineon Technologies)	IC NVSRAM 64KBIT PARALLEL 28LCC	0
CY7C1512KV18-300BZI IR (Infineon Technologies)	IC SRAM 72MBIT PARALLEL 165FBGA	416
CY7C1356SV25-200AXC IR (Infineon Technologies)	IC SRAM 9MBIT PARALLEL 100TQFP	1289
CY7C1399BL-12ZXCT IR (Infineon Technologies)	IC SRAM 256KBIT PAR 28TSOP I	4500
CY7C2268XV18-600BZXC IR (Infineon Technologies)	IC SRAM 36MBIT PARALLEL 165FBGA	248
CYD02S18V-167BBC IR (Infineon Technologies)	IC SRAM 2MBIT PARALLEL 256FBGA	45
CY7C1413BV18-250BZC IR (Infineon Technologies)	IC SRAM 36MBIT PARALLEL 165FBGA	474
CY7C1460AV25-250BZC IR (Infineon Technologies)	IC SRAM 36MBIT PARALLEL 165FBGA	200
CY7C1170V18-400BZC IR (Infineon Technologies)	IC SRAM 18MBIT PARALLEL 165FBGA	1150
FM1808B-PG IR (Infineon Technologies)	IC FRAM 256KBIT PARALLEL 28DIP	15876
CY7C1480BV33-167AXC IR (Infineon Technologies)	IC SRAM 72MBIT PARALLEL 100TQFP	235
CY7C15632KV18-500BZXI IR (Infineon Technologies)	IC SRAM 72MBIT PARALLEL 165FBGA	627
CY62147GE-45ZSXI IR (Infineon Technologies)	STANDARD SRAM, 256KX16, 45NS, CM	75
CY7C1318CV18-250BZI IR (Infineon Technologies)	IC SRAM 18MBIT PARALLEL 165FBGA	379
CY7C1518KV18-333BZC IR (Infineon Technologies)	IC SRAM 72MBIT PARALLEL 165FBGA	157
CY7C1564XV18-366BZXC IR (Infineon Technologies)	IC SRAM 72MBIT PARALLEL 165FBGA	160
CY7C1472BV33-200BZC IR (Infineon Technologies)	IC SRAM 72MBIT PARALLEL 165FBGA	42

Memory

1. Overview

Memory integrated circuits (ICs) are semiconductor devices used for storing digital data in electronic systems. As fundamental components of modern electronics, they enable data retention and retrieval in computers, mobile devices, industrial equipment, and automotive systems. Memory ICs are categorized into volatile (requires power to retain data) and non-volatile (retains data without power) types, playing critical roles in system performance, storage capacity, and energy efficiency.

2. Major Types and Functional Classification

Type	Functional Characteristics	Application Examples
DRAM (Dynamic RAM)	High-density, low-cost, requires periodic refresh	PCs, Servers, Graphics Cards
NAND Flash	Non-volatile, high endurance, block-level access	SSDs, USB Drives, Mobile Storage
SRAM (Static RAM)	High-speed, low density, no refresh required	Cache Memory, Networking Equipment
NOR Flash	Random access, execute-in-place capability	Embedded Systems, Automotive ECUs
MRAM (Magnetoresistive RAM)	Non-volatile, unlimited endurance, low power	IoT Devices, Industrial Sensors

3. Structure and Composition

Memory ICs typically consist of:

Storage Cell Array: Matrix of memory cells (transistors/capacitors for DRAM, floating-gate transistors for Flash)
Address Decoder: Selects specific memory locations
I/O Circuits: Data input/output interfaces
Control Logic: Manages read/write operations and timing
Power Management Units: Optimizes energy consumption

Advanced packages include BGA (Ball Grid Array) and 3D-stacked configurations for density optimization.

4. Key Technical Specifications

Parameter	Description	Importance
Storage Capacity	Data volume (Gb/GiB)	Determines system memory limits
Access Time	ns/predictable latency	Impacts processing speed
Power Consumption	mW/MHz	Affects battery life and thermal design
Endurance	P/E cycles (Flash)	Dictates product lifespan
Data Retention	Years (non-volatile)	Critical for long-term storage

5. Application Areas

Consumer Electronics: Smartphones (NAND Flash), Gaming Consoles (GDDR6)
Industrial Automation: PLCs (SRAM), Data Loggers (MRAM)
Automotive Systems: ADAS (LPDDR5), Infotainment (eMMC)
Enterprise Storage: SSD Controllers (3D NAND), Servers (RDIMM)

6. Leading Manufacturers and Products

Manufacturer	Representative Products
Samsung Electronics	V-NAND (9x-layer), LPDDR5X
SK hynix	HBM3 (8GB/s bandwidth), GDDR6
Microchip Technology	Serial NOR Flash (SST26)
Kioxia Corporation	BiCS FLASH (3D NAND)
Infineon Technologies	MRAM (40nm process)

7. Selection Recommendations

Key considerations:

Match memory type to application requirements (e.g., NOR Flash for code storage)
Evaluate bandwidth vs. latency tradeoffs
Analyze temperature and vibration specifications
Assess long-term supply stability
Optimize cost-per-bit metrics

Case Study: A smartphone manufacturer selected UFS 3.1 (NAND-based) for 2100MB/s read speeds, improving app launch times by 35%.

8. Industry Trends

Future directions include:

3D NAND scaling beyond 200 layers
Emerging memories (ReRAM, PCM) for AI acceleration
Package-on-Package (PoP) integration
AI-optimized memory architectures (Processing-in-Memory)
Green manufacturing processes (EUV lithography)