Memory

Part Number	Description / PDF	Quantity
CY7C25682KV18-400BZC IR (Infineon Technologies)	IC SRAM 72MBIT PARALLEL 165FBGA	127
CY7C1381D-100AXC IR (Infineon Technologies)	IC SRAM 18MBIT PARALLEL 100TQFP	0
CY7C25632KV18-500BZC IR (Infineon Technologies)	IC SRAM 72MBIT PARALLEL 165FBGA	193
CY7C1471BV33-133BZXC IR (Infineon Technologies)	ZBT SRAM, 2MX36, 6.5NS PBGA165	205
CY7C1420SV18-250BZC IR (Infineon Technologies)	IC SRAM 36MBIT PARALLEL 165FBGA	84
CY7C009-15AXC IR (Infineon Technologies)	IC SRAM 1MBIT PARALLEL 100TQFP	674
CY14B256I-SFXIT IR (Infineon Technologies)	IC NVSRAM 256KBIT I2C 16SOIC	1000
CY7C1514V18-250BZI IR (Infineon Technologies)	IC SRAM 72MBIT PARALLEL 165FBGA	3801
CY7C1415AV18-200BZI IR (Infineon Technologies)	IC SRAM 36MBIT PARALLEL 165FBGA	173
STK14C88-NF45 IR (Infineon Technologies)	IC NVSRAM 256KBIT PAR 32SOIC	0
CY7C1321CV18-167BZC IR (Infineon Technologies)	IC SRAM 18MBIT PARALLEL 165FBGA	641
CY7C2268XV18-633BZXC IR (Infineon Technologies)	IC SRAM 36MBIT PARALLEL 165FBGA	125
CY7C11701KV18-400BZXC IR (Infineon Technologies)	IC SRAM 18MBIT PARALLEL 165FBGA	541
CY7C1518AV18-167BZC IR (Infineon Technologies)	IC SRAM 72MBIT PARALLEL 165FBGA	520
CY14ME064Q2A-SXI IR (Infineon Technologies)	NON-VOLATILE SRAM, 8KX8, CMOS, P	3554
CY7C1292DV18-167BZC IR (Infineon Technologies)	IC SRAM 9MBIT PARALLEL 165FBGA	100
CY7C1049BNL-17VCT IR (Infineon Technologies)	IC SRAM 4MBIT PARALLEL 36SOJ	500
CY7C1512AV18-250BZI IR (Infineon Technologies)	IC SRAM 72MBIT PARALLEL 165FBGA	0
CY7C1625KV18-300BZXC IR (Infineon Technologies)	IC SRAM 144MBIT PARALLEL 165FBGA	425
CY7C1315CV18-250BZI IR (Infineon Technologies)	IC SRAM 18MBIT PARALLEL 165FBGA	379

Memory

1. Overview

Memory integrated circuits (ICs) are semiconductor devices used for storing digital data in electronic systems. As fundamental components of modern electronics, they enable data retention and retrieval in computers, mobile devices, industrial equipment, and automotive systems. Memory ICs are categorized into volatile (requires power to retain data) and non-volatile (retains data without power) types, playing critical roles in system performance, storage capacity, and energy efficiency.

2. Major Types and Functional Classification

Type	Functional Characteristics	Application Examples
DRAM (Dynamic RAM)	High-density, low-cost, requires periodic refresh	PCs, Servers, Graphics Cards
NAND Flash	Non-volatile, high endurance, block-level access	SSDs, USB Drives, Mobile Storage
SRAM (Static RAM)	High-speed, low density, no refresh required	Cache Memory, Networking Equipment
NOR Flash	Random access, execute-in-place capability	Embedded Systems, Automotive ECUs
MRAM (Magnetoresistive RAM)	Non-volatile, unlimited endurance, low power	IoT Devices, Industrial Sensors

3. Structure and Composition

Memory ICs typically consist of:

Storage Cell Array: Matrix of memory cells (transistors/capacitors for DRAM, floating-gate transistors for Flash)
Address Decoder: Selects specific memory locations
I/O Circuits: Data input/output interfaces
Control Logic: Manages read/write operations and timing
Power Management Units: Optimizes energy consumption

Advanced packages include BGA (Ball Grid Array) and 3D-stacked configurations for density optimization.

4. Key Technical Specifications

Parameter	Description	Importance
Storage Capacity	Data volume (Gb/GiB)	Determines system memory limits
Access Time	ns/predictable latency	Impacts processing speed
Power Consumption	mW/MHz	Affects battery life and thermal design
Endurance	P/E cycles (Flash)	Dictates product lifespan
Data Retention	Years (non-volatile)	Critical for long-term storage

5. Application Areas

Consumer Electronics: Smartphones (NAND Flash), Gaming Consoles (GDDR6)
Industrial Automation: PLCs (SRAM), Data Loggers (MRAM)
Automotive Systems: ADAS (LPDDR5), Infotainment (eMMC)
Enterprise Storage: SSD Controllers (3D NAND), Servers (RDIMM)

6. Leading Manufacturers and Products

Manufacturer	Representative Products
Samsung Electronics	V-NAND (9x-layer), LPDDR5X
SK hynix	HBM3 (8GB/s bandwidth), GDDR6
Microchip Technology	Serial NOR Flash (SST26)
Kioxia Corporation	BiCS FLASH (3D NAND)
Infineon Technologies	MRAM (40nm process)

7. Selection Recommendations

Key considerations:

Match memory type to application requirements (e.g., NOR Flash for code storage)
Evaluate bandwidth vs. latency tradeoffs
Analyze temperature and vibration specifications
Assess long-term supply stability
Optimize cost-per-bit metrics

Case Study: A smartphone manufacturer selected UFS 3.1 (NAND-based) for 2100MB/s read speeds, improving app launch times by 35%.

8. Industry Trends

Future directions include:

3D NAND scaling beyond 200 layers
Emerging memories (ReRAM, PCM) for AI acceleration
Package-on-Package (PoP) integration
AI-optimized memory architectures (Processing-in-Memory)
Green manufacturing processes (EUV lithography)