Memory

Part Number	Description / PDF	Quantity
CY7C1354S-166BGC IR (Infineon Technologies)	IC SRAM 9MBIT PARALLEL 119PBGA	459
S29GL512T11FAIV10 IR (Infineon Technologies)	IC FLASH 512MBIT PARALLEL 64FBGA	164
CY7C1440AV33-250AXC IR (Infineon Technologies)	IC SRAM 36MBIT PARALLEL 100TQFP	75
CY7C1545KV18-450BZXI IR (Infineon Technologies)	QDR SRAM, 2MX36, 0.45NS PBGA165	291
CYDM064B16-55BVXI IR (Infineon Technologies)	IC SRAM 64KBIT PARALLEL 100VFBGA	5569
CY15B128Q-SXA IR (Infineon Technologies)	IC FRAM 128KBIT SPI 40MHZ 8SOIC	110
S29GL128S11TFIV10 IR (Infineon Technologies)	IC FLASH 128MBIT PARALLEL 56TSOP	0
CY7C1265XV18-600BZXC IR (Infineon Technologies)	IC SRAM 36MBIT PARALLEL 165FBGA	144
CY7C21701KV18-400BZXC IR (Infineon Technologies)	IC SRAM 18MBIT PARALLEL 165FBGA	131
CY7C1270KV18-550BZC IR (Infineon Technologies)	IC SRAM 36MBIT PARALLEL 165FBGA	326
CY7C1372D-167BGC IR (Infineon Technologies)	IC SRAM 18MBIT PARALLEL 119PBGA	28
CY14V101NA-BA25XI IR (Infineon Technologies)	IC NVSRAM 1MBIT PARALLEL 48FBGA	898
CY7C1041CV33-15ZC IR (Infineon Technologies)	IC SRAM 4MBIT PARALLEL 44TSOP II	0
CY7C1418BV18-250BZXC IR (Infineon Technologies)	IC SRAM 36MBIT PARALLEL 165FBGA	213
CY7C2265KV18-550BZC IR (Infineon Technologies)	IC SRAM 36MBIT PARALLEL 165FBGA	331
CY7C1357C-100AXCT IR (Infineon Technologies)	IC SRAM 9MBIT PARALLEL 100TQFP	750
CY7C1513KV18-300BZXC IR (Infineon Technologies)	QDR SRAM, 4MX18, 0.45NS PBGA165	192
CY7C1418BV18-250BZI IR (Infineon Technologies)	IC SRAM 36MBIT PARALLEL 165FBGA	4864
CY7C1543KV18-450BZI IR (Infineon Technologies)	IC SRAM 72MBIT PARALLEL 165FBGA	86
CY7C1440SV33-167AXC IR (Infineon Technologies)	IC SRAM 36MBIT PARALLEL 100TQFP	932

Memory

1. Overview

Memory integrated circuits (ICs) are semiconductor devices used for storing digital data in electronic systems. As fundamental components of modern electronics, they enable data retention and retrieval in computers, mobile devices, industrial equipment, and automotive systems. Memory ICs are categorized into volatile (requires power to retain data) and non-volatile (retains data without power) types, playing critical roles in system performance, storage capacity, and energy efficiency.

2. Major Types and Functional Classification

Type	Functional Characteristics	Application Examples
DRAM (Dynamic RAM)	High-density, low-cost, requires periodic refresh	PCs, Servers, Graphics Cards
NAND Flash	Non-volatile, high endurance, block-level access	SSDs, USB Drives, Mobile Storage
SRAM (Static RAM)	High-speed, low density, no refresh required	Cache Memory, Networking Equipment
NOR Flash	Random access, execute-in-place capability	Embedded Systems, Automotive ECUs
MRAM (Magnetoresistive RAM)	Non-volatile, unlimited endurance, low power	IoT Devices, Industrial Sensors

3. Structure and Composition

Memory ICs typically consist of:

Storage Cell Array: Matrix of memory cells (transistors/capacitors for DRAM, floating-gate transistors for Flash)
Address Decoder: Selects specific memory locations
I/O Circuits: Data input/output interfaces
Control Logic: Manages read/write operations and timing
Power Management Units: Optimizes energy consumption

Advanced packages include BGA (Ball Grid Array) and 3D-stacked configurations for density optimization.

4. Key Technical Specifications

Parameter	Description	Importance
Storage Capacity	Data volume (Gb/GiB)	Determines system memory limits
Access Time	ns/predictable latency	Impacts processing speed
Power Consumption	mW/MHz	Affects battery life and thermal design
Endurance	P/E cycles (Flash)	Dictates product lifespan
Data Retention	Years (non-volatile)	Critical for long-term storage

5. Application Areas

Consumer Electronics: Smartphones (NAND Flash), Gaming Consoles (GDDR6)
Industrial Automation: PLCs (SRAM), Data Loggers (MRAM)
Automotive Systems: ADAS (LPDDR5), Infotainment (eMMC)
Enterprise Storage: SSD Controllers (3D NAND), Servers (RDIMM)

6. Leading Manufacturers and Products

Manufacturer	Representative Products
Samsung Electronics	V-NAND (9x-layer), LPDDR5X
SK hynix	HBM3 (8GB/s bandwidth), GDDR6
Microchip Technology	Serial NOR Flash (SST26)
Kioxia Corporation	BiCS FLASH (3D NAND)
Infineon Technologies	MRAM (40nm process)

7. Selection Recommendations

Key considerations:

Match memory type to application requirements (e.g., NOR Flash for code storage)
Evaluate bandwidth vs. latency tradeoffs
Analyze temperature and vibration specifications
Assess long-term supply stability
Optimize cost-per-bit metrics

Case Study: A smartphone manufacturer selected UFS 3.1 (NAND-based) for 2100MB/s read speeds, improving app launch times by 35%.

8. Industry Trends

Future directions include:

3D NAND scaling beyond 200 layers
Emerging memories (ReRAM, PCM) for AI acceleration
Package-on-Package (PoP) integration
AI-optimized memory architectures (Processing-in-Memory)
Green manufacturing processes (EUV lithography)