Memory

Part Number	Description / PDF	Quantity
CY7C1351S-133AXC IR (Infineon Technologies)	IC SRAM 4.5MBIT PARALLEL 100TQFP	5165
CY14E256Q5A-SXQ IR (Infineon Technologies)	IC NVSRAM 256KBIT SPI 8SOIC	510
CY7C1021DV33-10ZSXAT IR (Infineon Technologies)	IC SRAM 1MBIT PARALLEL 44TSOP II	117
CY7C1313BV18-250BZC IR (Infineon Technologies)	IC SRAM 18MBIT PARALLEL 165FBGA	1480
FM25V20-G IR (Infineon Technologies)	IC FRAM 2MBIT SPI 40MHZ 8SOIC	0
CY7C1320JV18-300BZC IR (Infineon Technologies)	IC SRAM 18MBIT PARALLEL 165FBGA	100
CY14ME064Q1B-SXI IR (Infineon Technologies)	NON-VOLATILE SRAM, 8KX8, CMOS, P	463
CY7C1314CV18-200BZC IR (Infineon Technologies)	IC SRAM 18MBIT PARALLEL 165FBGA	43
CY7C199-15ZC IR (Infineon Technologies)	IC SRAM 256KBIT PAR 28TSOP I	2958
CY7C2644KV18-333BZI IR (Infineon Technologies)	IC SRAM 144MBIT PARALLEL 165FBGA	102
S29GL01GS11FHI020 IR (Infineon Technologies)	IC FLASH 1GBIT PARALLEL 64FBGA	112
CY7C09099V-7AXI IR (Infineon Technologies)	IC SRAM 1MBIT PARALLEL 100TQFP	536
CY7C1393KV18-300BZXC IR (Infineon Technologies)	IC SRAM 18MBIT PARALLEL 165FBGA	3528
CY62126EV30LL-45BVXIT IR (Infineon Technologies)	IC SRAM 1MBIT PARALLEL 48VFBGA	8052
CY7C13201KV18-300BZXC IR (Infineon Technologies)	IC SRAM 18MBIT PARALLEL 165FBGA	217
CY7C15632KV18-500BZXC IR (Infineon Technologies)	IC SRAM 72MBIT PARALLEL 165FBGA	258
CY7C1150KV18-400BZC IR (Infineon Technologies)	IC SRAM 18MBIT PARALLEL 165FBGA	480
CY7C1543KV18-400BZC IR (Infineon Technologies)	IC SRAM 72MBIT PARALLEL 165FBGA	1081
CY7C1414KV18-250BZC IR (Infineon Technologies)	IC SRAM 36MBIT PARALLEL 165FBGA	1003
STK17TA8-RF25 IR (Infineon Technologies)	PROGRAMMABLE TIMER PDSO48	3621

Memory

1. Overview

Memory integrated circuits (ICs) are semiconductor devices used for storing digital data in electronic systems. As fundamental components of modern electronics, they enable data retention and retrieval in computers, mobile devices, industrial equipment, and automotive systems. Memory ICs are categorized into volatile (requires power to retain data) and non-volatile (retains data without power) types, playing critical roles in system performance, storage capacity, and energy efficiency.

2. Major Types and Functional Classification

Type	Functional Characteristics	Application Examples
DRAM (Dynamic RAM)	High-density, low-cost, requires periodic refresh	PCs, Servers, Graphics Cards
NAND Flash	Non-volatile, high endurance, block-level access	SSDs, USB Drives, Mobile Storage
SRAM (Static RAM)	High-speed, low density, no refresh required	Cache Memory, Networking Equipment
NOR Flash	Random access, execute-in-place capability	Embedded Systems, Automotive ECUs
MRAM (Magnetoresistive RAM)	Non-volatile, unlimited endurance, low power	IoT Devices, Industrial Sensors

3. Structure and Composition

Memory ICs typically consist of:

Storage Cell Array: Matrix of memory cells (transistors/capacitors for DRAM, floating-gate transistors for Flash)
Address Decoder: Selects specific memory locations
I/O Circuits: Data input/output interfaces
Control Logic: Manages read/write operations and timing
Power Management Units: Optimizes energy consumption

Advanced packages include BGA (Ball Grid Array) and 3D-stacked configurations for density optimization.

4. Key Technical Specifications

Parameter	Description	Importance
Storage Capacity	Data volume (Gb/GiB)	Determines system memory limits
Access Time	ns/predictable latency	Impacts processing speed
Power Consumption	mW/MHz	Affects battery life and thermal design
Endurance	P/E cycles (Flash)	Dictates product lifespan
Data Retention	Years (non-volatile)	Critical for long-term storage

5. Application Areas

Consumer Electronics: Smartphones (NAND Flash), Gaming Consoles (GDDR6)
Industrial Automation: PLCs (SRAM), Data Loggers (MRAM)
Automotive Systems: ADAS (LPDDR5), Infotainment (eMMC)
Enterprise Storage: SSD Controllers (3D NAND), Servers (RDIMM)

6. Leading Manufacturers and Products

Manufacturer	Representative Products
Samsung Electronics	V-NAND (9x-layer), LPDDR5X
SK hynix	HBM3 (8GB/s bandwidth), GDDR6
Microchip Technology	Serial NOR Flash (SST26)
Kioxia Corporation	BiCS FLASH (3D NAND)
Infineon Technologies	MRAM (40nm process)

7. Selection Recommendations

Key considerations:

Match memory type to application requirements (e.g., NOR Flash for code storage)
Evaluate bandwidth vs. latency tradeoffs
Analyze temperature and vibration specifications
Assess long-term supply stability
Optimize cost-per-bit metrics

Case Study: A smartphone manufacturer selected UFS 3.1 (NAND-based) for 2100MB/s read speeds, improving app launch times by 35%.

8. Industry Trends

Future directions include:

3D NAND scaling beyond 200 layers
Emerging memories (ReRAM, PCM) for AI acceleration
Package-on-Package (PoP) integration
AI-optimized memory architectures (Processing-in-Memory)
Green manufacturing processes (EUV lithography)