Memory

Part Number	Description / PDF	Quantity
S25FL127SABBHIT00 IR (Infineon Technologies)	IC FLASH 128MBIT 108MHZ 24BGA	125
CY14B256K-SP45XC IR (Infineon Technologies)	IC NVSRAM 256KBIT PAR 48SSOP	198
CY7C09569V-83AXC IR (Infineon Technologies)	IC SRAM 576KBIT PARALLEL 144TQFP	35
CY7C1565KV18-450BZXC IR (Infineon Technologies)	IC SRAM 72MBIT PARALLEL 165FBGA	268
S29GL01GS11FHB023 IR (Infineon Technologies)	IC FLASH 1GBIT PARALLEL 64FBGA	227
CY7C1415BV18-250BZC IR (Infineon Technologies)	IC SRAM 36MBIT PARALLEL 165FBGA	1018
CY7C199CN-15VXCT IR (Infineon Technologies)	IC SRAM 256KBIT PARALLEL 28SOJ	0
CY7C1563XV18-633BZXC IR (Infineon Technologies)	IC SRAM 72MBIT PARALLEL 165FBGA	100
CY7C1051DV33-12BAXI IR (Infineon Technologies)	IC SRAM 8MBIT PARALLEL 48FBGA	437
CY7C1470BV33-200BZI IR (Infineon Technologies)	IC SRAM 72MBIT PARALLEL 165FBGA	20
CY7C057V-12AXC IR (Infineon Technologies)	IC SRAM 1.152MBIT PAR 144TQFP	300
CY7C1380DV33-200AXI IR (Infineon Technologies)	CACHE SRAM, 512KX36 PQFP100	392
CY7C0853AV-100BBC IR (Infineon Technologies)	IC SRAM 9MBIT PARALLEL 172FBGA	92
CY7C1361A-117AJC IR (Infineon Technologies)	IC SRAM 9MBIT PARALLEL 100TQFP	45
CY7C1525KV18-300BZC IR (Infineon Technologies)	QDR SRAM, 8MX9, 0.45NS, CMOS, PB	78
CY7C09289V-9AXC IR (Infineon Technologies)	IC SRAM 1MBIT PARALLEL 100TQFP	0
CY7C1614KV18-300BZC IR (Infineon Technologies)	QDR SRAM, 4MX36, 0.45NS, CMOS, P	203
CY7C1360C-166AXC IR (Infineon Technologies)	CACHE SRAM, 256KX36, 3.5NS PQFP1	0
CY7C1338S-100AXC IR (Infineon Technologies)	IC SRAM 4MBIT PARALLEL 100TQFP	929
CY7C1320BV18-250BZC IR (Infineon Technologies)	IC SRAM 18MBIT PARALLEL 165FBGA	226

Memory

1. Overview

Memory integrated circuits (ICs) are semiconductor devices used for storing digital data in electronic systems. As fundamental components of modern electronics, they enable data retention and retrieval in computers, mobile devices, industrial equipment, and automotive systems. Memory ICs are categorized into volatile (requires power to retain data) and non-volatile (retains data without power) types, playing critical roles in system performance, storage capacity, and energy efficiency.

2. Major Types and Functional Classification

Type	Functional Characteristics	Application Examples
DRAM (Dynamic RAM)	High-density, low-cost, requires periodic refresh	PCs, Servers, Graphics Cards
NAND Flash	Non-volatile, high endurance, block-level access	SSDs, USB Drives, Mobile Storage
SRAM (Static RAM)	High-speed, low density, no refresh required	Cache Memory, Networking Equipment
NOR Flash	Random access, execute-in-place capability	Embedded Systems, Automotive ECUs
MRAM (Magnetoresistive RAM)	Non-volatile, unlimited endurance, low power	IoT Devices, Industrial Sensors

3. Structure and Composition

Memory ICs typically consist of:

Storage Cell Array: Matrix of memory cells (transistors/capacitors for DRAM, floating-gate transistors for Flash)
Address Decoder: Selects specific memory locations
I/O Circuits: Data input/output interfaces
Control Logic: Manages read/write operations and timing
Power Management Units: Optimizes energy consumption

Advanced packages include BGA (Ball Grid Array) and 3D-stacked configurations for density optimization.

4. Key Technical Specifications

Parameter	Description	Importance
Storage Capacity	Data volume (Gb/GiB)	Determines system memory limits
Access Time	ns/predictable latency	Impacts processing speed
Power Consumption	mW/MHz	Affects battery life and thermal design
Endurance	P/E cycles (Flash)	Dictates product lifespan
Data Retention	Years (non-volatile)	Critical for long-term storage

5. Application Areas

Consumer Electronics: Smartphones (NAND Flash), Gaming Consoles (GDDR6)
Industrial Automation: PLCs (SRAM), Data Loggers (MRAM)
Automotive Systems: ADAS (LPDDR5), Infotainment (eMMC)
Enterprise Storage: SSD Controllers (3D NAND), Servers (RDIMM)

6. Leading Manufacturers and Products

Manufacturer	Representative Products
Samsung Electronics	V-NAND (9x-layer), LPDDR5X
SK hynix	HBM3 (8GB/s bandwidth), GDDR6
Microchip Technology	Serial NOR Flash (SST26)
Kioxia Corporation	BiCS FLASH (3D NAND)
Infineon Technologies	MRAM (40nm process)

7. Selection Recommendations

Key considerations:

Match memory type to application requirements (e.g., NOR Flash for code storage)
Evaluate bandwidth vs. latency tradeoffs
Analyze temperature and vibration specifications
Assess long-term supply stability
Optimize cost-per-bit metrics

Case Study: A smartphone manufacturer selected UFS 3.1 (NAND-based) for 2100MB/s read speeds, improving app launch times by 35%.

8. Industry Trends

Future directions include:

3D NAND scaling beyond 200 layers
Emerging memories (ReRAM, PCM) for AI acceleration
Package-on-Package (PoP) integration
AI-optimized memory architectures (Processing-in-Memory)
Green manufacturing processes (EUV lithography)