Memory

Part Number	Description / PDF	Quantity
CY7C1512KV18-250BZI IR (Infineon Technologies)	QDR SRAM, 4MX18, 0.45NS PBGA165	57
CY7C1470V25-167BZXI IR (Infineon Technologies)	IC SRAM 72MBIT PARALLEL 165FBGA	47
S25FL128SAGMFVG00 IR (Infineon Technologies)	IC FLASH 128MBIT SPI/QUAD 16SOIC	795
CY7C1514KV18-300BZXI IR (Infineon Technologies)	IC SRAM 72MBIT PARALLEL 165FBGA	79
CY7C12451KV18-400BZC IR (Infineon Technologies)	IC SRAM 36MBIT PARALLEL 165FBGA	0
CY7C135-25JXI IR (Infineon Technologies)	IC SRAM 32KBIT PARALLEL 52PLCC	214
CY7C1412BV18-167BZC IR (Infineon Technologies)	IC SRAM 36MBIT PARALLEL 165FBGA	273
CY7C1021B-12VC IR (Infineon Technologies)	IC SRAM 1MBIT PARALLEL 44SOJ	0
CY62256VNLL-70ZRXI IR (Infineon Technologies)	IC SRAM 256KBIT PAR 28TSOP I	465
CY62146ELL-45ZSXAT IR (Infineon Technologies)	IC SRAM 4MBIT PARALLEL 44TSOP II	2000
CY7C1570KV18-450BZXI IR (Infineon Technologies)	IC SRAM 72MBIT PARALLEL 165FBGA	2671
CY7C1011CV33-12ZSXE IR (Infineon Technologies)	STANDARD SRAM, 128KX16, 12NS PDS	5000
CY7C1460AV25-167AXC IR (Infineon Technologies)	ZBT SRAM, 1MX36, 3.4NS PQFP100	545
CY7C1415AV18-250BZC IR (Infineon Technologies)	IC SRAM 36MBIT PARALLEL 165FBGA	94
CY7C1041CV33-12VXC IR (Infineon Technologies)	IC SRAM 4MBIT PARALLEL 44SOJ	0
CY7C1059DV33-12ZSXQ IR (Infineon Technologies)	IC SRAM 8MBIT PARALLEL 44TSOP II	1997
CY14B101Q1A-SXI IR (Infineon Technologies)	IC NVSRAM 1MBIT SPI 40MHZ 8SOIC	529
CY7C131-25JXC IR (Infineon Technologies)	IC SRAM 8KBIT PARALLEL 52PLCC	0
CY7C1525V18-200BZXC IR (Infineon Technologies)	IC SRAM 72MBIT PARALLEL 165FBGA	49
CY7C1471BV25-133AXC IR (Infineon Technologies)	IC SRAM 72MBIT PARALLEL 100TQFP	394

Memory

1. Overview

Memory integrated circuits (ICs) are semiconductor devices used for storing digital data in electronic systems. As fundamental components of modern electronics, they enable data retention and retrieval in computers, mobile devices, industrial equipment, and automotive systems. Memory ICs are categorized into volatile (requires power to retain data) and non-volatile (retains data without power) types, playing critical roles in system performance, storage capacity, and energy efficiency.

2. Major Types and Functional Classification

Type	Functional Characteristics	Application Examples
DRAM (Dynamic RAM)	High-density, low-cost, requires periodic refresh	PCs, Servers, Graphics Cards
NAND Flash	Non-volatile, high endurance, block-level access	SSDs, USB Drives, Mobile Storage
SRAM (Static RAM)	High-speed, low density, no refresh required	Cache Memory, Networking Equipment
NOR Flash	Random access, execute-in-place capability	Embedded Systems, Automotive ECUs
MRAM (Magnetoresistive RAM)	Non-volatile, unlimited endurance, low power	IoT Devices, Industrial Sensors

3. Structure and Composition

Memory ICs typically consist of:

Storage Cell Array: Matrix of memory cells (transistors/capacitors for DRAM, floating-gate transistors for Flash)
Address Decoder: Selects specific memory locations
I/O Circuits: Data input/output interfaces
Control Logic: Manages read/write operations and timing
Power Management Units: Optimizes energy consumption

Advanced packages include BGA (Ball Grid Array) and 3D-stacked configurations for density optimization.

4. Key Technical Specifications

Parameter	Description	Importance
Storage Capacity	Data volume (Gb/GiB)	Determines system memory limits
Access Time	ns/predictable latency	Impacts processing speed
Power Consumption	mW/MHz	Affects battery life and thermal design
Endurance	P/E cycles (Flash)	Dictates product lifespan
Data Retention	Years (non-volatile)	Critical for long-term storage

5. Application Areas

Consumer Electronics: Smartphones (NAND Flash), Gaming Consoles (GDDR6)
Industrial Automation: PLCs (SRAM), Data Loggers (MRAM)
Automotive Systems: ADAS (LPDDR5), Infotainment (eMMC)
Enterprise Storage: SSD Controllers (3D NAND), Servers (RDIMM)

6. Leading Manufacturers and Products

Manufacturer	Representative Products
Samsung Electronics	V-NAND (9x-layer), LPDDR5X
SK hynix	HBM3 (8GB/s bandwidth), GDDR6
Microchip Technology	Serial NOR Flash (SST26)
Kioxia Corporation	BiCS FLASH (3D NAND)
Infineon Technologies	MRAM (40nm process)

7. Selection Recommendations

Key considerations:

Match memory type to application requirements (e.g., NOR Flash for code storage)
Evaluate bandwidth vs. latency tradeoffs
Analyze temperature and vibration specifications
Assess long-term supply stability
Optimize cost-per-bit metrics

Case Study: A smartphone manufacturer selected UFS 3.1 (NAND-based) for 2100MB/s read speeds, improving app launch times by 35%.

8. Industry Trends

Future directions include:

3D NAND scaling beyond 200 layers
Emerging memories (ReRAM, PCM) for AI acceleration
Package-on-Package (PoP) integration
AI-optimized memory architectures (Processing-in-Memory)
Green manufacturing processes (EUV lithography)