Memory

Part Number	Description / PDF	Quantity
S34MS01G200BHI000 IR (Infineon Technologies)	IC FLASH 1GBIT PARALLEL 63BGA	80
CY7C1418JV18-300BZXC IR (Infineon Technologies)	IC SRAM 36MBIT PARALLEL 165FBGA	1862
CY14B104N-ZS25XI IR (Infineon Technologies)	IC NVSRAM 4MBIT PAR 44TSOP II	384
CY7C024-55AC IR (Infineon Technologies)	IC SRAM 64KBIT PARALLEL 100TQFP	0
CY14B101P-SFXI IR (Infineon Technologies)	IC NVSRAM 1MBIT SPI 40MHZ 16SOIC	1109
S25FS128SDSMFI1D1 IR (Infineon Technologies)	IC FLSH 128MBIT SPI/QUAD I/O 8SO	189
CY7C15632KV18-450BZXI IR (Infineon Technologies)	IC SRAM 72MBIT PARALLEL 165FBGA	3993
S71VS128RC0AHK4L0 IR (Infineon Technologies)	MEMORY CIRCUIT, FLASH+PSRAM, 2MX	150
CYD36S36V18-200BGXC IR (Infineon Technologies)	IC SRAM 36MBIT PARALLEL 484FBGA	1
CY7C1325H-133AXI IR (Infineon Technologies)	IC SRAM 4MBIT PARALLEL 100TQFP	157
CY7C1480BV25-200BZC IR (Infineon Technologies)	CACHE SRAM, 2MX36, 3NS, CMOS, PB	116
CYD09S72V-133BBI IR (Infineon Technologies)	IC SRAM 9MBIT PARALLEL 484FBGA	934
CY62256VNLL-70SNXC IR (Infineon Technologies)	IC SRAM 256KBIT PARALLEL 28SOIC	393
CY7C1347S-200AXC IR (Infineon Technologies)	IC SRAM 4.5MBIT PARALLEL 100TQFP	1925
CY7C024-25AXI IR (Infineon Technologies)	IC SRAM 64KBIT PARALLEL 100TQFP	0
CY7C1523AV18-250BZC IR (Infineon Technologies)	IC SRAM 72MBIT PARALLEL 165FBGA	552
CY14B104LA-ZS45XI IR (Infineon Technologies)	NON-VOLATILE SRAM, 512KX8, 45NS	374
CY7C1041CV33-10BAXA IR (Infineon Technologies)	IC SRAM 4MBIT PARALLEL 48FBGA	0
CY7C11501KV18-400BZXC IR (Infineon Technologies)	IC SRAM 18MBIT PARALLEL 165FBGA	1473
CY7C1250KV18-450BZXC IR (Infineon Technologies)	IC SRAM 36MBIT PARALLEL 165FBGA	188

Memory

1. Overview

Memory integrated circuits (ICs) are semiconductor devices used for storing digital data in electronic systems. As fundamental components of modern electronics, they enable data retention and retrieval in computers, mobile devices, industrial equipment, and automotive systems. Memory ICs are categorized into volatile (requires power to retain data) and non-volatile (retains data without power) types, playing critical roles in system performance, storage capacity, and energy efficiency.

2. Major Types and Functional Classification

Type	Functional Characteristics	Application Examples
DRAM (Dynamic RAM)	High-density, low-cost, requires periodic refresh	PCs, Servers, Graphics Cards
NAND Flash	Non-volatile, high endurance, block-level access	SSDs, USB Drives, Mobile Storage
SRAM (Static RAM)	High-speed, low density, no refresh required	Cache Memory, Networking Equipment
NOR Flash	Random access, execute-in-place capability	Embedded Systems, Automotive ECUs
MRAM (Magnetoresistive RAM)	Non-volatile, unlimited endurance, low power	IoT Devices, Industrial Sensors

3. Structure and Composition

Memory ICs typically consist of:

Storage Cell Array: Matrix of memory cells (transistors/capacitors for DRAM, floating-gate transistors for Flash)
Address Decoder: Selects specific memory locations
I/O Circuits: Data input/output interfaces
Control Logic: Manages read/write operations and timing
Power Management Units: Optimizes energy consumption

Advanced packages include BGA (Ball Grid Array) and 3D-stacked configurations for density optimization.

4. Key Technical Specifications

Parameter	Description	Importance
Storage Capacity	Data volume (Gb/GiB)	Determines system memory limits
Access Time	ns/predictable latency	Impacts processing speed
Power Consumption	mW/MHz	Affects battery life and thermal design
Endurance	P/E cycles (Flash)	Dictates product lifespan
Data Retention	Years (non-volatile)	Critical for long-term storage

5. Application Areas

Consumer Electronics: Smartphones (NAND Flash), Gaming Consoles (GDDR6)
Industrial Automation: PLCs (SRAM), Data Loggers (MRAM)
Automotive Systems: ADAS (LPDDR5), Infotainment (eMMC)
Enterprise Storage: SSD Controllers (3D NAND), Servers (RDIMM)

6. Leading Manufacturers and Products

Manufacturer	Representative Products
Samsung Electronics	V-NAND (9x-layer), LPDDR5X
SK hynix	HBM3 (8GB/s bandwidth), GDDR6
Microchip Technology	Serial NOR Flash (SST26)
Kioxia Corporation	BiCS FLASH (3D NAND)
Infineon Technologies	MRAM (40nm process)

7. Selection Recommendations

Key considerations:

Match memory type to application requirements (e.g., NOR Flash for code storage)
Evaluate bandwidth vs. latency tradeoffs
Analyze temperature and vibration specifications
Assess long-term supply stability
Optimize cost-per-bit metrics

Case Study: A smartphone manufacturer selected UFS 3.1 (NAND-based) for 2100MB/s read speeds, improving app launch times by 35%.

8. Industry Trends

Future directions include:

3D NAND scaling beyond 200 layers
Emerging memories (ReRAM, PCM) for AI acceleration
Package-on-Package (PoP) integration
AI-optimized memory architectures (Processing-in-Memory)
Green manufacturing processes (EUV lithography)