Memory

Part Number	Description / PDF	Quantity
CY7C1366S-166BGC IR (Infineon Technologies)	IC SRAM 9MBIT PARALLEL 119PBGA	201
CY7C1320CV18-250BZC IR (Infineon Technologies)	IC SRAM 18MBIT PARALLEL 165FBGA	280
CY7C0851V-133AXC IR (Infineon Technologies)	IC SRAM 2MBIT PARALLEL 176TQFP	1922
CY7C1010DV33-10ZSXI IR (Infineon Technologies)	IC SRAM 2MBIT PARALLEL 44TSOP II	2120
CY7C1363S-133AXC IR (Infineon Technologies)	IC SRAM 9MBIT PARALLEL 100TQFP	338
CY7C1313TV18-250BZC IR (Infineon Technologies)	IC SRAM 18MBIT PARALLEL 165FBGA	4770
CY62148G18-55ZSXI IR (Infineon Technologies)	IC SRAM 4MBIT PARALLEL 32TSOP II	75
CY7C1370D-200BGXC IR (Infineon Technologies)	IC SRAM 18MBIT PARALLEL 119PBGA	496
CY7C14201KV18-250BZC IR (Infineon Technologies)	IC SRAM 36MBIT PARALLEL 165FBGA	121
S25FL064LABNFV040 IR (Infineon Technologies)	SERIAL FLASH, 64MB	0
CY7C1373D-133BZI IR (Infineon Technologies)	IC SRAM 18MBIT PARALLEL 165FBGA	1299
CY7C1568KV18-550BZXC IR (Infineon Technologies)	IC SRAM 72MBIT PARALLEL 165FBGA	219
STK12C68-5K55M IR (Infineon Technologies)	IC NVSRAM 64KBIT PARALLEL 28CDIP	45
CY7C1423KV18-250BZXC IR (Infineon Technologies)	DDR SRAM, 2MX18, 0.45NS PBGA165	121
CY7C1320KV18-250BZC IR (Infineon Technologies)	DDR SRAM, 512KX36, 0.45NS, CMOS,	239
CY7C1470BV33-200AXI IR (Infineon Technologies)	IC SRAM 72MBIT PARALLEL 100TQFP	64
CY7C09279V-7AXC IR (Infineon Technologies)	DUAL-PORT SRAM, 32KX16, 7.5NS, C	351
CY7C131-55JXI IR (Infineon Technologies)	IC SRAM 8KBIT PARALLEL 52PLCC	0
CY7C1525KV18-333BZC IR (Infineon Technologies)	IC SRAM 72MBIT PARALLEL 165FBGA	1876
CY62256VLL-70SNXC IR (Infineon Technologies)	IC SRAM 256KBIT PARALLEL 28SOIC	1415

Memory

1. Overview

Memory integrated circuits (ICs) are semiconductor devices used for storing digital data in electronic systems. As fundamental components of modern electronics, they enable data retention and retrieval in computers, mobile devices, industrial equipment, and automotive systems. Memory ICs are categorized into volatile (requires power to retain data) and non-volatile (retains data without power) types, playing critical roles in system performance, storage capacity, and energy efficiency.

2. Major Types and Functional Classification

Type	Functional Characteristics	Application Examples
DRAM (Dynamic RAM)	High-density, low-cost, requires periodic refresh	PCs, Servers, Graphics Cards
NAND Flash	Non-volatile, high endurance, block-level access	SSDs, USB Drives, Mobile Storage
SRAM (Static RAM)	High-speed, low density, no refresh required	Cache Memory, Networking Equipment
NOR Flash	Random access, execute-in-place capability	Embedded Systems, Automotive ECUs
MRAM (Magnetoresistive RAM)	Non-volatile, unlimited endurance, low power	IoT Devices, Industrial Sensors

3. Structure and Composition

Memory ICs typically consist of:

Storage Cell Array: Matrix of memory cells (transistors/capacitors for DRAM, floating-gate transistors for Flash)
Address Decoder: Selects specific memory locations
I/O Circuits: Data input/output interfaces
Control Logic: Manages read/write operations and timing
Power Management Units: Optimizes energy consumption

Advanced packages include BGA (Ball Grid Array) and 3D-stacked configurations for density optimization.

4. Key Technical Specifications

Parameter	Description	Importance
Storage Capacity	Data volume (Gb/GiB)	Determines system memory limits
Access Time	ns/predictable latency	Impacts processing speed
Power Consumption	mW/MHz	Affects battery life and thermal design
Endurance	P/E cycles (Flash)	Dictates product lifespan
Data Retention	Years (non-volatile)	Critical for long-term storage

5. Application Areas

Consumer Electronics: Smartphones (NAND Flash), Gaming Consoles (GDDR6)
Industrial Automation: PLCs (SRAM), Data Loggers (MRAM)
Automotive Systems: ADAS (LPDDR5), Infotainment (eMMC)
Enterprise Storage: SSD Controllers (3D NAND), Servers (RDIMM)

6. Leading Manufacturers and Products

Manufacturer	Representative Products
Samsung Electronics	V-NAND (9x-layer), LPDDR5X
SK hynix	HBM3 (8GB/s bandwidth), GDDR6
Microchip Technology	Serial NOR Flash (SST26)
Kioxia Corporation	BiCS FLASH (3D NAND)
Infineon Technologies	MRAM (40nm process)

7. Selection Recommendations

Key considerations:

Match memory type to application requirements (e.g., NOR Flash for code storage)
Evaluate bandwidth vs. latency tradeoffs
Analyze temperature and vibration specifications
Assess long-term supply stability
Optimize cost-per-bit metrics

Case Study: A smartphone manufacturer selected UFS 3.1 (NAND-based) for 2100MB/s read speeds, improving app launch times by 35%.

8. Industry Trends

Future directions include:

3D NAND scaling beyond 200 layers
Emerging memories (ReRAM, PCM) for AI acceleration
Package-on-Package (PoP) integration
AI-optimized memory architectures (Processing-in-Memory)
Green manufacturing processes (EUV lithography)