Memory

Part Number	Description / PDF	Quantity
CY7C1514KV18-300BZI IR (Infineon Technologies)	IC SRAM 72MBIT PARALLEL 165FBGA	179
S29GL256S10DHV020 IR (Infineon Technologies)	FLASH, 16MX16, 100NS, PBGA64	540
CY7C0851V-167BBC IR (Infineon Technologies)	DUAL-PORT SRAM, 64KX36, 4NS, CMO	6
CY7C1360S-200BGC IR (Infineon Technologies)	IC SRAM 9MBIT PARALLEL 119PBGA	1050
S25FL256SDPMFV000 IR (Infineon Technologies)	IC FLASH 256MBIT SPI/QUAD 16SOIC	175
CY14B116M-BZ45XI IR (Infineon Technologies)	NON-VOLATILE SRAM, 1MX16, 45NS P	195
CY7C1243KV18-400BZC IR (Infineon Technologies)	IC SRAM 36MBIT PARALLEL 165FBGA	408
CY7C1570V18-400BZC IR (Infineon Technologies)	IC SRAM 72MBIT PARALLEL 165FBGA	994
CY14B104LA-BA45XI IR (Infineon Technologies)	IC NVSRAM 4MBIT PARALLEL 48FBGA	197
CY7C1350G-200AXI IR (Infineon Technologies)	ZBT SRAM, 128KX36, 2.8NS PQFP100	2828
CY7C1061DV18-15ZSXI IR (Infineon Technologies)	IC SRAM 16MBIT PAR 54TSOP II	988
FM25V05-G IR (Infineon Technologies)	IC FRAM 512KBIT SPI 40MHZ 8SOIC	137
CY14B104L-BA45XI IR (Infineon Technologies)	IC NVSRAM 4MBIT PARALLEL 48FBGA	315
CY62256LL-70SNXCT IR (Infineon Technologies)	SLOW 5.0V ULTRA LOW POWER 32KX8	6200
CY14E512Q1A-SXI IR (Infineon Technologies)	NON-VOLATILE SRAM, 64KX8, CMOS,	430
CY7C25652KV18-450BZXC IR (Infineon Technologies)	IC SRAM 72MBIT PARALLEL 165FBGA	80
CY7C1414KV18-300BZI IR (Infineon Technologies)	IC SRAM 36MBIT PARALLEL 165FBGA	312
CY7C1263V18-400BZXC IR (Infineon Technologies)	IC SRAM 36MBIT PARALLEL 165FBGA	373
CY7C09579V-83BBC IR (Infineon Technologies)	DUAL-PORT SRAM, 32KX36, 18NS PBG	3096
CY7C1312CV18-167BZC IR (Infineon Technologies)	IC SRAM 18MBIT PARALLEL 165FBGA	721

Memory

1. Overview

Memory integrated circuits (ICs) are semiconductor devices used for storing digital data in electronic systems. As fundamental components of modern electronics, they enable data retention and retrieval in computers, mobile devices, industrial equipment, and automotive systems. Memory ICs are categorized into volatile (requires power to retain data) and non-volatile (retains data without power) types, playing critical roles in system performance, storage capacity, and energy efficiency.

2. Major Types and Functional Classification

Type	Functional Characteristics	Application Examples
DRAM (Dynamic RAM)	High-density, low-cost, requires periodic refresh	PCs, Servers, Graphics Cards
NAND Flash	Non-volatile, high endurance, block-level access	SSDs, USB Drives, Mobile Storage
SRAM (Static RAM)	High-speed, low density, no refresh required	Cache Memory, Networking Equipment
NOR Flash	Random access, execute-in-place capability	Embedded Systems, Automotive ECUs
MRAM (Magnetoresistive RAM)	Non-volatile, unlimited endurance, low power	IoT Devices, Industrial Sensors

3. Structure and Composition

Memory ICs typically consist of:

Storage Cell Array: Matrix of memory cells (transistors/capacitors for DRAM, floating-gate transistors for Flash)
Address Decoder: Selects specific memory locations
I/O Circuits: Data input/output interfaces
Control Logic: Manages read/write operations and timing
Power Management Units: Optimizes energy consumption

Advanced packages include BGA (Ball Grid Array) and 3D-stacked configurations for density optimization.

4. Key Technical Specifications

Parameter	Description	Importance
Storage Capacity	Data volume (Gb/GiB)	Determines system memory limits
Access Time	ns/predictable latency	Impacts processing speed
Power Consumption	mW/MHz	Affects battery life and thermal design
Endurance	P/E cycles (Flash)	Dictates product lifespan
Data Retention	Years (non-volatile)	Critical for long-term storage

5. Application Areas

Consumer Electronics: Smartphones (NAND Flash), Gaming Consoles (GDDR6)
Industrial Automation: PLCs (SRAM), Data Loggers (MRAM)
Automotive Systems: ADAS (LPDDR5), Infotainment (eMMC)
Enterprise Storage: SSD Controllers (3D NAND), Servers (RDIMM)

6. Leading Manufacturers and Products

Manufacturer	Representative Products
Samsung Electronics	V-NAND (9x-layer), LPDDR5X
SK hynix	HBM3 (8GB/s bandwidth), GDDR6
Microchip Technology	Serial NOR Flash (SST26)
Kioxia Corporation	BiCS FLASH (3D NAND)
Infineon Technologies	MRAM (40nm process)

7. Selection Recommendations

Key considerations:

Match memory type to application requirements (e.g., NOR Flash for code storage)
Evaluate bandwidth vs. latency tradeoffs
Analyze temperature and vibration specifications
Assess long-term supply stability
Optimize cost-per-bit metrics

Case Study: A smartphone manufacturer selected UFS 3.1 (NAND-based) for 2100MB/s read speeds, improving app launch times by 35%.

8. Industry Trends

Future directions include:

3D NAND scaling beyond 200 layers
Emerging memories (ReRAM, PCM) for AI acceleration
Package-on-Package (PoP) integration
AI-optimized memory architectures (Processing-in-Memory)
Green manufacturing processes (EUV lithography)