Memory

Part Number	Description / PDF	Quantity
CY7C1518KV18-333BZI IR (Infineon Technologies)	IC SRAM 72MBIT PARALLEL 165FBGA	128
S34ML04G104BHI010 IR (Infineon Technologies)	IC FLASH 4GBIT PARALLEL 63BGA	14157
CY7C1565XV18-600BZXC IR (Infineon Technologies)	IC SRAM 72MBIT PARALLEL 165FBGA	262
CY7C1460SV25-167BZXC IR (Infineon Technologies)	IC SRAM 36MBIT PARALLEL 165FBGA	162
CY7C1021CV33-10VC IR (Infineon Technologies)	IC SRAM 1MBIT PARALLEL 44SOJ	0
CY7C1318BV18-250BZC IR (Infineon Technologies)	IC SRAM 18MBIT PARALLEL 165FBGA	572
CY7C1525JV18-250BZC IR (Infineon Technologies)	IC SRAM 72MBIT PARALLEL 165FBGA	8591
CY7C2570XV18-600BZXC IR (Infineon Technologies)	IC SRAM 72MBIT PARALLEL 165FBGA	130
CY7C1565KV18-500BZXC IR (Infineon Technologies)	IC SRAM 72MBIT PARALLEL 165FBGA	233
CY62167EV18LL-55BAXI IR (Infineon Technologies)	IC SRAM 16MBIT PARALLEL 48VFBGA	853
CY7C1311CV18-250BZC IR (Infineon Technologies)	IC SRAM 18MBIT PARALLEL 165FBGA	529
CY7C1020BN-12VXCT IR (Infineon Technologies)	IC SRAM 512KBIT PARALLEL 44SOJ	1500
CY7C1250KV18-400BZC IR (Infineon Technologies)	DDR SRAM, 1MX36, 0.45NS, CMOS, P	107
S29PL032J60BFI120 IR (Infineon Technologies)	IC FLASH 32MBIT PARALLEL 48FBGA	0
CY7C1382D-167AXC IR (Infineon Technologies)	IC SRAM 18MBIT PARALLEL 100TQFP	0
STK12C68-WF45 IR (Infineon Technologies)	IC NVSRAM 64KBIT PARALLEL 28DIP	44
CY7C0853AV-133BBC IR (Infineon Technologies)	IC SRAM 9MBIT PARALLEL 172FBGA	338
CY7C1470V33-167AXC IR (Infineon Technologies)	IC SRAM 72MBIT PARALLEL 100TQFP	7
CY62128ELL-45ZAXIT IR (Infineon Technologies)	IC SRAM 1MBIT PARALLEL 32STSOP	1671
CY7C1412AV18-200BZXC IR (Infineon Technologies)	QDR SRAM, 2MX18, 0.45NS PBGA165	121

Memory

1. Overview

Memory integrated circuits (ICs) are semiconductor devices used for storing digital data in electronic systems. As fundamental components of modern electronics, they enable data retention and retrieval in computers, mobile devices, industrial equipment, and automotive systems. Memory ICs are categorized into volatile (requires power to retain data) and non-volatile (retains data without power) types, playing critical roles in system performance, storage capacity, and energy efficiency.

2. Major Types and Functional Classification

Type	Functional Characteristics	Application Examples
DRAM (Dynamic RAM)	High-density, low-cost, requires periodic refresh	PCs, Servers, Graphics Cards
NAND Flash	Non-volatile, high endurance, block-level access	SSDs, USB Drives, Mobile Storage
SRAM (Static RAM)	High-speed, low density, no refresh required	Cache Memory, Networking Equipment
NOR Flash	Random access, execute-in-place capability	Embedded Systems, Automotive ECUs
MRAM (Magnetoresistive RAM)	Non-volatile, unlimited endurance, low power	IoT Devices, Industrial Sensors

3. Structure and Composition

Memory ICs typically consist of:

Storage Cell Array: Matrix of memory cells (transistors/capacitors for DRAM, floating-gate transistors for Flash)
Address Decoder: Selects specific memory locations
I/O Circuits: Data input/output interfaces
Control Logic: Manages read/write operations and timing
Power Management Units: Optimizes energy consumption

Advanced packages include BGA (Ball Grid Array) and 3D-stacked configurations for density optimization.

4. Key Technical Specifications

Parameter	Description	Importance
Storage Capacity	Data volume (Gb/GiB)	Determines system memory limits
Access Time	ns/predictable latency	Impacts processing speed
Power Consumption	mW/MHz	Affects battery life and thermal design
Endurance	P/E cycles (Flash)	Dictates product lifespan
Data Retention	Years (non-volatile)	Critical for long-term storage

5. Application Areas

Consumer Electronics: Smartphones (NAND Flash), Gaming Consoles (GDDR6)
Industrial Automation: PLCs (SRAM), Data Loggers (MRAM)
Automotive Systems: ADAS (LPDDR5), Infotainment (eMMC)
Enterprise Storage: SSD Controllers (3D NAND), Servers (RDIMM)

6. Leading Manufacturers and Products

Manufacturer	Representative Products
Samsung Electronics	V-NAND (9x-layer), LPDDR5X
SK hynix	HBM3 (8GB/s bandwidth), GDDR6
Microchip Technology	Serial NOR Flash (SST26)
Kioxia Corporation	BiCS FLASH (3D NAND)
Infineon Technologies	MRAM (40nm process)

7. Selection Recommendations

Key considerations:

Match memory type to application requirements (e.g., NOR Flash for code storage)
Evaluate bandwidth vs. latency tradeoffs
Analyze temperature and vibration specifications
Assess long-term supply stability
Optimize cost-per-bit metrics

Case Study: A smartphone manufacturer selected UFS 3.1 (NAND-based) for 2100MB/s read speeds, improving app launch times by 35%.

8. Industry Trends

Future directions include:

3D NAND scaling beyond 200 layers
Emerging memories (ReRAM, PCM) for AI acceleration
Package-on-Package (PoP) integration
AI-optimized memory architectures (Processing-in-Memory)
Green manufacturing processes (EUV lithography)