Memory

Part Number	Description / PDF	Quantity
CY7C1009B-15VC IR (Infineon Technologies)	IC SRAM 1MBIT PARALLEL 32SOJ	2619
CY62138FV30LL-45ZAXA IR (Infineon Technologies)	STANDARD SRAM, 256KX8, 45NS PDSO	6577
CY7C1355C-100BGC IR (Infineon Technologies)	IC SRAM 9MBIT PARALLEL 119PBGA	369
S29GL256S11DHV020 IR (Infineon Technologies)	IC FLASH 256MBIT PARALLEL 64FBGA	556
CY7C1021BN-15ZSXE IR (Infineon Technologies)	IC SRAM 1MBIT PARALLEL 44TSOP II	3661
CY7C136A-55JXI IR (Infineon Technologies)	IC SRAM 16KBIT PARALLEL 52PLCC	5500
CY7C1380D-250AXC IR (Infineon Technologies)	IC SRAM 18MBIT PARALLEL 100TQFP	0
CY7C2568XV18-600BZXC IR (Infineon Technologies)	IC SRAM 72MBIT PARALLEL 165FBGA	130
CY7C131-55NXC IR (Infineon Technologies)	IC SRAM 8KBIT PARALLEL 52PQFP	0
CY7C14141KV18-300BZXC IR (Infineon Technologies)	IC SRAM 36MBIT PARALLEL 165FBGA	7
CY7C1415KV18-300BZI IR (Infineon Technologies)	IC SRAM 36MBIT PARALLEL 165FBGA	204
FM1608B-SG IR (Infineon Technologies)	IC FRAM 64KBIT PARALLEL 28SOIC	25471
S29GL01GS11TFIV13 IR (Infineon Technologies)	IC FLASH 1GBIT PARALLEL 56TSOP	135
CY7C1020D-10VXIT IR (Infineon Technologies)	IC SRAM 512KBIT PARALLEL 44SOJ	24410
CY7C1543V18-333BZI IR (Infineon Technologies)	IC SRAM 72MBIT PARALLEL 165FBGA	33
CY7C1315KV18-300BZC IR (Infineon Technologies)	IC SRAM 18MBIT PARALLEL 165FBGA	252
CY7C1370S-167AXI IR (Infineon Technologies)	IC SRAM 18MBIT PARALLEL 100TQFP	211
CY7C1303TV25-167BZC IR (Infineon Technologies)	IC SRAM 18MBIT PARALLEL 165FBGA	309
CY7C1412BV18-167BZXI IR (Infineon Technologies)	IC SRAM 36MBIT PARALLEL 165FBGA	398
CY7C1618KV18-300BZXC IR (Infineon Technologies)	DDR SRAM, 8MX18, 0.45NS PBGA165	70

Memory

1. Overview

Memory integrated circuits (ICs) are semiconductor devices used for storing digital data in electronic systems. As fundamental components of modern electronics, they enable data retention and retrieval in computers, mobile devices, industrial equipment, and automotive systems. Memory ICs are categorized into volatile (requires power to retain data) and non-volatile (retains data without power) types, playing critical roles in system performance, storage capacity, and energy efficiency.

2. Major Types and Functional Classification

Type	Functional Characteristics	Application Examples
DRAM (Dynamic RAM)	High-density, low-cost, requires periodic refresh	PCs, Servers, Graphics Cards
NAND Flash	Non-volatile, high endurance, block-level access	SSDs, USB Drives, Mobile Storage
SRAM (Static RAM)	High-speed, low density, no refresh required	Cache Memory, Networking Equipment
NOR Flash	Random access, execute-in-place capability	Embedded Systems, Automotive ECUs
MRAM (Magnetoresistive RAM)	Non-volatile, unlimited endurance, low power	IoT Devices, Industrial Sensors

3. Structure and Composition

Memory ICs typically consist of:

Storage Cell Array: Matrix of memory cells (transistors/capacitors for DRAM, floating-gate transistors for Flash)
Address Decoder: Selects specific memory locations
I/O Circuits: Data input/output interfaces
Control Logic: Manages read/write operations and timing
Power Management Units: Optimizes energy consumption

Advanced packages include BGA (Ball Grid Array) and 3D-stacked configurations for density optimization.

4. Key Technical Specifications

Parameter	Description	Importance
Storage Capacity	Data volume (Gb/GiB)	Determines system memory limits
Access Time	ns/predictable latency	Impacts processing speed
Power Consumption	mW/MHz	Affects battery life and thermal design
Endurance	P/E cycles (Flash)	Dictates product lifespan
Data Retention	Years (non-volatile)	Critical for long-term storage

5. Application Areas

Consumer Electronics: Smartphones (NAND Flash), Gaming Consoles (GDDR6)
Industrial Automation: PLCs (SRAM), Data Loggers (MRAM)
Automotive Systems: ADAS (LPDDR5), Infotainment (eMMC)
Enterprise Storage: SSD Controllers (3D NAND), Servers (RDIMM)

6. Leading Manufacturers and Products

Manufacturer	Representative Products
Samsung Electronics	V-NAND (9x-layer), LPDDR5X
SK hynix	HBM3 (8GB/s bandwidth), GDDR6
Microchip Technology	Serial NOR Flash (SST26)
Kioxia Corporation	BiCS FLASH (3D NAND)
Infineon Technologies	MRAM (40nm process)

7. Selection Recommendations

Key considerations:

Match memory type to application requirements (e.g., NOR Flash for code storage)
Evaluate bandwidth vs. latency tradeoffs
Analyze temperature and vibration specifications
Assess long-term supply stability
Optimize cost-per-bit metrics

Case Study: A smartphone manufacturer selected UFS 3.1 (NAND-based) for 2100MB/s read speeds, improving app launch times by 35%.

8. Industry Trends

Future directions include:

3D NAND scaling beyond 200 layers
Emerging memories (ReRAM, PCM) for AI acceleration
Package-on-Package (PoP) integration
AI-optimized memory architectures (Processing-in-Memory)
Green manufacturing processes (EUV lithography)