Memory

Part Number	Description / PDF	Quantity
CY7C1320CV18-267BZXC IR (Infineon Technologies)	IC SRAM 18MBIT PARALLEL 165FBGA	227
CY7C1425JV18-267BZI IR (Infineon Technologies)	IC SRAM 36MBIT PARALLEL 165FBGA	170
CY7C14251KV18-250BZI IR (Infineon Technologies)	IC SRAM 36MBIT PARALLEL 165FBGA	160
CY7C1399BN-15VXCT IR (Infineon Technologies)	IC SRAM 256KBIT PARALLEL 28SOJ	6000
CY14ME256J2-SXI IR (Infineon Technologies)	IC NVSRAM 256KBIT I2C 8SOIC	2501
CY62146ELL-45ZSXA IR (Infineon Technologies)	IC SRAM 4MBIT PARALLEL 44TSOP II	7775
CY7C1570KV18-500BZXI IR (Infineon Technologies)	IC SRAM 72MBIT PARALLEL 165FBGA	302
CY7S1041G30-10VXI IR (Infineon Technologies)	STANDARD SRAM, 256KX16, 10NS PDS	50
CY7C1512KV18-300BZXC IR (Infineon Technologies)	IC SRAM 72MBIT PARALLEL 165FBGA	379
CY7C1411KV18-250BZC IR (Infineon Technologies)	IC SRAM 36MBIT PARALLEL 165FBGA	396
CY7C1347S-133AXC IR (Infineon Technologies)	IC SRAM 4.5MBIT 133MHZ 100LQFP	285
CY7C144-55JXC IR (Infineon Technologies)	IC SRAM 64KBIT PARALLEL 68PLCC	0
CY62256VLL-70ZXIT IR (Infineon Technologies)	IC SRAM 256KBIT PAR 28TSOP I	0
CY7C1314TV18-167BZC IR (Infineon Technologies)	IC SRAM 18MBIT PARALLEL 165FBGA	436
CY7C14141KV18-250BZXC IR (Infineon Technologies)	IC SRAM 36MBIT PARALLEL 165FBGA	181
CY14B104L-BA45XC IR (Infineon Technologies)	IC NVSRAM 4MBIT PARALLEL 48FBGA	15
S29GL01GT12DHVV20 IR (Infineon Technologies)	PARALLEL NOR FLASH, 1 GB, 120NS	270
CY7C1515AV18-200BZXI IR (Infineon Technologies)	IC SRAM 72MBIT PARALLEL 165FBGA	179
STK11C68-C35I IR (Infineon Technologies)	IC NVSRAM 64KBIT PARALLEL 28CDIP	215
CY7C09179V-12AC IR (Infineon Technologies)	IC SRAM 288KBIT PARALLEL 100TQFP	60

Memory

1. Overview

Memory integrated circuits (ICs) are semiconductor devices used for storing digital data in electronic systems. As fundamental components of modern electronics, they enable data retention and retrieval in computers, mobile devices, industrial equipment, and automotive systems. Memory ICs are categorized into volatile (requires power to retain data) and non-volatile (retains data without power) types, playing critical roles in system performance, storage capacity, and energy efficiency.

2. Major Types and Functional Classification

Type	Functional Characteristics	Application Examples
DRAM (Dynamic RAM)	High-density, low-cost, requires periodic refresh	PCs, Servers, Graphics Cards
NAND Flash	Non-volatile, high endurance, block-level access	SSDs, USB Drives, Mobile Storage
SRAM (Static RAM)	High-speed, low density, no refresh required	Cache Memory, Networking Equipment
NOR Flash	Random access, execute-in-place capability	Embedded Systems, Automotive ECUs
MRAM (Magnetoresistive RAM)	Non-volatile, unlimited endurance, low power	IoT Devices, Industrial Sensors

3. Structure and Composition

Memory ICs typically consist of:

Storage Cell Array: Matrix of memory cells (transistors/capacitors for DRAM, floating-gate transistors for Flash)
Address Decoder: Selects specific memory locations
I/O Circuits: Data input/output interfaces
Control Logic: Manages read/write operations and timing
Power Management Units: Optimizes energy consumption

Advanced packages include BGA (Ball Grid Array) and 3D-stacked configurations for density optimization.

4. Key Technical Specifications

Parameter	Description	Importance
Storage Capacity	Data volume (Gb/GiB)	Determines system memory limits
Access Time	ns/predictable latency	Impacts processing speed
Power Consumption	mW/MHz	Affects battery life and thermal design
Endurance	P/E cycles (Flash)	Dictates product lifespan
Data Retention	Years (non-volatile)	Critical for long-term storage

5. Application Areas

Consumer Electronics: Smartphones (NAND Flash), Gaming Consoles (GDDR6)
Industrial Automation: PLCs (SRAM), Data Loggers (MRAM)
Automotive Systems: ADAS (LPDDR5), Infotainment (eMMC)
Enterprise Storage: SSD Controllers (3D NAND), Servers (RDIMM)

6. Leading Manufacturers and Products

Manufacturer	Representative Products
Samsung Electronics	V-NAND (9x-layer), LPDDR5X
SK hynix	HBM3 (8GB/s bandwidth), GDDR6
Microchip Technology	Serial NOR Flash (SST26)
Kioxia Corporation	BiCS FLASH (3D NAND)
Infineon Technologies	MRAM (40nm process)

7. Selection Recommendations

Key considerations:

Match memory type to application requirements (e.g., NOR Flash for code storage)
Evaluate bandwidth vs. latency tradeoffs
Analyze temperature and vibration specifications
Assess long-term supply stability
Optimize cost-per-bit metrics

Case Study: A smartphone manufacturer selected UFS 3.1 (NAND-based) for 2100MB/s read speeds, improving app launch times by 35%.

8. Industry Trends

Future directions include:

3D NAND scaling beyond 200 layers
Emerging memories (ReRAM, PCM) for AI acceleration
Package-on-Package (PoP) integration
AI-optimized memory architectures (Processing-in-Memory)
Green manufacturing processes (EUV lithography)