Memory

Part Number	Description / PDF	Quantity
CY7C1415BV18-200BZC IR (Infineon Technologies)	IC SRAM 36MBIT PARALLEL 165FBGA	558
CY7C1010DV33-10VXIT IR (Infineon Technologies)	IC SRAM 2MBIT PARALLEL 36SOJ	500
CY7C1320BV18-200BZC IR (Infineon Technologies)	IC SRAM 18MBIT PARALLEL 165FBGA	523
CY7C25442KV18-333BZI IR (Infineon Technologies)	IC SRAM 72MBIT PARALLEL 165FBGA	56
CY62156ESL-45BVXI IR (Infineon Technologies)	IC SRAM 8MBIT PARALLEL 48VFBGA	2061
CY7C1163KV18-400BZI IR (Infineon Technologies)	IC SRAM 18MBIT PARALLEL 165FBGA	559
CY7C1041GE-10ZSXI IR (Infineon Technologies)	STANDARD SRAM, 256KX16, 10NS, CM	0
CG7380AM IR (Infineon Technologies)	RF TRANSCEIVERS	0
CY7C1412KV18-250BZXI IR (Infineon Technologies)	QDR SRAM, 2MX18, 0.45NS PBGA165	347
CY7C1352S-133AXI IR (Infineon Technologies)	IC SRAM 4.5MBIT PARALLEL 100TQFP	365
CY7C1354C-166AXCT IR (Infineon Technologies)	IC SRAM 9MBIT PARALLEL 100TQFP	738
CY7C2565KV18-500BZC IR (Infineon Technologies)	IC SRAM 72MBIT PARALLEL 165FBGA	67
CY7C1370D-200BZC IR (Infineon Technologies)	IC SRAM 18MBIT PARALLEL 165FBGA	384
CY7C1470V25-167BZXC IR (Infineon Technologies)	IC SRAM 72MBIT PARALLEL 165FBGA	49
CY7C2563KV18-400BZC IR (Infineon Technologies)	IC SRAM 72MBIT PARALLEL 165FBGA	94
CY7C194BN-15VC IR (Infineon Technologies)	IC SRAM 256KBIT PARALLEL 24SOJ	3939
CY62167DV30LL-70BVI IR (Infineon Technologies)	STANDARD SRAM, 1MX16, 70NS PBGA4	345
S25FL116K0XBHV030 IR (Infineon Technologies)	IC FLASH 16MBIT SPI/QUAD 24BGA	0
CY7C1515JV18-300BZC IR (Infineon Technologies)	IC SRAM 72MBIT PARALLEL 165FBGA	50
S25FL132K0XBHIS30 IR (Infineon Technologies)	IC FLASH 32MBIT SPI/QUAD 24BGA	0

Memory

1. Overview

Memory integrated circuits (ICs) are semiconductor devices used for storing digital data in electronic systems. As fundamental components of modern electronics, they enable data retention and retrieval in computers, mobile devices, industrial equipment, and automotive systems. Memory ICs are categorized into volatile (requires power to retain data) and non-volatile (retains data without power) types, playing critical roles in system performance, storage capacity, and energy efficiency.

2. Major Types and Functional Classification

Type	Functional Characteristics	Application Examples
DRAM (Dynamic RAM)	High-density, low-cost, requires periodic refresh	PCs, Servers, Graphics Cards
NAND Flash	Non-volatile, high endurance, block-level access	SSDs, USB Drives, Mobile Storage
SRAM (Static RAM)	High-speed, low density, no refresh required	Cache Memory, Networking Equipment
NOR Flash	Random access, execute-in-place capability	Embedded Systems, Automotive ECUs
MRAM (Magnetoresistive RAM)	Non-volatile, unlimited endurance, low power	IoT Devices, Industrial Sensors

3. Structure and Composition

Memory ICs typically consist of:

Storage Cell Array: Matrix of memory cells (transistors/capacitors for DRAM, floating-gate transistors for Flash)
Address Decoder: Selects specific memory locations
I/O Circuits: Data input/output interfaces
Control Logic: Manages read/write operations and timing
Power Management Units: Optimizes energy consumption

Advanced packages include BGA (Ball Grid Array) and 3D-stacked configurations for density optimization.

4. Key Technical Specifications

Parameter	Description	Importance
Storage Capacity	Data volume (Gb/GiB)	Determines system memory limits
Access Time	ns/predictable latency	Impacts processing speed
Power Consumption	mW/MHz	Affects battery life and thermal design
Endurance	P/E cycles (Flash)	Dictates product lifespan
Data Retention	Years (non-volatile)	Critical for long-term storage

5. Application Areas

Consumer Electronics: Smartphones (NAND Flash), Gaming Consoles (GDDR6)
Industrial Automation: PLCs (SRAM), Data Loggers (MRAM)
Automotive Systems: ADAS (LPDDR5), Infotainment (eMMC)
Enterprise Storage: SSD Controllers (3D NAND), Servers (RDIMM)

6. Leading Manufacturers and Products

Manufacturer	Representative Products
Samsung Electronics	V-NAND (9x-layer), LPDDR5X
SK hynix	HBM3 (8GB/s bandwidth), GDDR6
Microchip Technology	Serial NOR Flash (SST26)
Kioxia Corporation	BiCS FLASH (3D NAND)
Infineon Technologies	MRAM (40nm process)

7. Selection Recommendations

Key considerations:

Match memory type to application requirements (e.g., NOR Flash for code storage)
Evaluate bandwidth vs. latency tradeoffs
Analyze temperature and vibration specifications
Assess long-term supply stability
Optimize cost-per-bit metrics

Case Study: A smartphone manufacturer selected UFS 3.1 (NAND-based) for 2100MB/s read speeds, improving app launch times by 35%.

8. Industry Trends

Future directions include:

3D NAND scaling beyond 200 layers
Emerging memories (ReRAM, PCM) for AI acceleration
Package-on-Package (PoP) integration
AI-optimized memory architectures (Processing-in-Memory)
Green manufacturing processes (EUV lithography)