Memory

Part Number	Description / PDF	Quantity
CY7C1021CV33-10ZXI IR (Infineon Technologies)	IC SRAM 1MBIT PARALLEL 44TSOP II	891
S29GL128N11FFI020 IR (Infineon Technologies)	IC FLASH 128MBIT PARALLEL 64FBGA	837
S29GL512T12TFN010 IR (Infineon Technologies)	PARALLEL NOR MIRRORBIT FLASH, 51	530
CY7C037V-15AXC IR (Infineon Technologies)	IC SRAM 576KBIT PARALLEL 100TQFP	57
CY7C109B-12ZXC IR (Infineon Technologies)	IC SRAM 1MBIT PARALLEL 32TSOP I	1702
CY7C028V-25AC IR (Infineon Technologies)	IC SRAM 1MBIT PARALLEL 100TQFP	539
CY7C2565XV18-633BZC IR (Infineon Technologies)	IC SRAM 72MBIT PARALLEL 165FBGA	125
CY7C14251KV18-250BZC IR (Infineon Technologies)	IC SRAM 36MBIT PARALLEL 165FBGA	4390
CY7C2263XV18-633BZXC IR (Infineon Technologies)	IC SRAM 36MBIT PARALLEL 165FBGA	147
CY7C25632KV18-550BZC IR (Infineon Technologies)	QDR SRAM, 4MX18, 0.45NS, CMOS, P	256
CY7C1513AV18-200BZC IR (Infineon Technologies)	IC SRAM 72MBIT PARALLEL 165FBGA	70
CY7C1347F-100AC IR (Infineon Technologies)	IC SRAM 4.5MBIT PARALLEL 100TQFP	87
CY7C1350G-166AXI IR (Infineon Technologies)	IC SRAM 4.5MBIT PARALLEL 100TQFP	395
CY7C1245KV18-400BZC IR (Infineon Technologies)	IC SRAM 36MBIT PARALLEL 165FBGA	1259
CY7C0852AV-133BBC IR (Infineon Technologies)	IC SRAM 4.5MBIT PARALLEL 172FBGA	1101
CY7C1512AV18-200BZXI IR (Infineon Technologies)	IC SRAM 72MBIT PARALLEL 165FBGA	8
CY7C1470V25-200BZC IR (Infineon Technologies)	IC SRAM 72MBIT PARALLEL 165FBGA	10
CY7C25702KV18-400BZC IR (Infineon Technologies)	DDR SRAM, 2MX36, 0.45NS, CMOS, P	181
CY7C1363C-133AJXC IR (Infineon Technologies)	CACHE SRAM, 512KX18, 6.5NS PQFP1	269
CY62138FV30LL-45SXI IR (Infineon Technologies)	IC SRAM 2MBIT PARALLEL 32SOIC	0

Memory

1. Overview

Memory integrated circuits (ICs) are semiconductor devices used for storing digital data in electronic systems. As fundamental components of modern electronics, they enable data retention and retrieval in computers, mobile devices, industrial equipment, and automotive systems. Memory ICs are categorized into volatile (requires power to retain data) and non-volatile (retains data without power) types, playing critical roles in system performance, storage capacity, and energy efficiency.

2. Major Types and Functional Classification

Type	Functional Characteristics	Application Examples
DRAM (Dynamic RAM)	High-density, low-cost, requires periodic refresh	PCs, Servers, Graphics Cards
NAND Flash	Non-volatile, high endurance, block-level access	SSDs, USB Drives, Mobile Storage
SRAM (Static RAM)	High-speed, low density, no refresh required	Cache Memory, Networking Equipment
NOR Flash	Random access, execute-in-place capability	Embedded Systems, Automotive ECUs
MRAM (Magnetoresistive RAM)	Non-volatile, unlimited endurance, low power	IoT Devices, Industrial Sensors

3. Structure and Composition

Memory ICs typically consist of:

Storage Cell Array: Matrix of memory cells (transistors/capacitors for DRAM, floating-gate transistors for Flash)
Address Decoder: Selects specific memory locations
I/O Circuits: Data input/output interfaces
Control Logic: Manages read/write operations and timing
Power Management Units: Optimizes energy consumption

Advanced packages include BGA (Ball Grid Array) and 3D-stacked configurations for density optimization.

4. Key Technical Specifications

Parameter	Description	Importance
Storage Capacity	Data volume (Gb/GiB)	Determines system memory limits
Access Time	ns/predictable latency	Impacts processing speed
Power Consumption	mW/MHz	Affects battery life and thermal design
Endurance	P/E cycles (Flash)	Dictates product lifespan
Data Retention	Years (non-volatile)	Critical for long-term storage

5. Application Areas

Consumer Electronics: Smartphones (NAND Flash), Gaming Consoles (GDDR6)
Industrial Automation: PLCs (SRAM), Data Loggers (MRAM)
Automotive Systems: ADAS (LPDDR5), Infotainment (eMMC)
Enterprise Storage: SSD Controllers (3D NAND), Servers (RDIMM)

6. Leading Manufacturers and Products

Manufacturer	Representative Products
Samsung Electronics	V-NAND (9x-layer), LPDDR5X
SK hynix	HBM3 (8GB/s bandwidth), GDDR6
Microchip Technology	Serial NOR Flash (SST26)
Kioxia Corporation	BiCS FLASH (3D NAND)
Infineon Technologies	MRAM (40nm process)

7. Selection Recommendations

Key considerations:

Match memory type to application requirements (e.g., NOR Flash for code storage)
Evaluate bandwidth vs. latency tradeoffs
Analyze temperature and vibration specifications
Assess long-term supply stability
Optimize cost-per-bit metrics

Case Study: A smartphone manufacturer selected UFS 3.1 (NAND-based) for 2100MB/s read speeds, improving app launch times by 35%.

8. Industry Trends

Future directions include:

3D NAND scaling beyond 200 layers
Emerging memories (ReRAM, PCM) for AI acceleration
Package-on-Package (PoP) integration
AI-optimized memory architectures (Processing-in-Memory)
Green manufacturing processes (EUV lithography)