Memory

Part Number	Description / PDF	Quantity
CY7C1425JV18-250BZI IR (Infineon Technologies)	IC SRAM 36MBIT PARALLEL 165FBGA	54
S34MS02G100BHI000 IR (Infineon Technologies)	FLASH, 256MX8, 45NS, PBGA63	265
CY7C1413AV18-200BZC IR (Infineon Technologies)	IC SRAM 36MBIT PARALLEL 165FBGA	100
CY7C1550KV18-400BZC IR (Infineon Technologies)	IC SRAM 72MBIT PARALLEL 165FBGA	572
CY14B104N-BA20XI IR (Infineon Technologies)	IC NVSRAM 4MBIT PARALLEL 48FBGA	412
CY7C1312CV18-250BZXC IR (Infineon Technologies)	IC SRAM 18MBIT PARALLEL 165FBGA	2879
CY7C1470BV25-167BZI IR (Infineon Technologies)	IC SRAM 72MBIT PARALLEL 165FBGA	233
CYDM064B08-55BVXI IR (Infineon Technologies)	IC SRAM 64KBIT PARALLEL 100VFBGA	4671
STK12C68-L45I IR (Infineon Technologies)	IC NVSRAM 64KBIT PARALLEL 28LCC	34
CY7C2563XV18-633BZXC IR (Infineon Technologies)	QDR SRAM, 4MX18, 0.45NS PBGA165	213
CY14MB256J1-SXI IR (Infineon Technologies)	IC NVSRAM 256KBIT I2C 8SOIC	4015
S25FL164K0XBHV020 IR (Infineon Technologies)	IC FLASH 64MBIT SPI/QUAD 24BGA	0
CY7C1321KV18-333BZC IR (Infineon Technologies)	IC SRAM 18MBIT PARALLEL 165FBGA	238
CY7C1423AV18-250BZC IR (Infineon Technologies)	IC SRAM 36MBIT PARALLEL 165FBGA	119
S29PL127J70BAW020 IR (Infineon Technologies)	IC FLASH 128MBIT PARALLEL 64FBGA	687
CY7C1412KV18-250BZC IR (Infineon Technologies)	QDR SRAM, 2MX18, 0.45NS, CMOS, P	306
CY62137VNLL-70ZSXAT IR (Infineon Technologies)	IC SRAM 2MBIT PARALLEL 44TSOP II	181
CY14ME064J1-SXI IR (Infineon Technologies)	IC NVSRAM 64KBIT I2C 8SOIC	2520
CY7C1018CV33-12VXI IR (Infineon Technologies)	IC SRAM 1MBIT PARALLEL 32SOJ	2616
CY62128ELL-45SXA IR (Infineon Technologies)	IC SRAM 1MBIT PARALLEL 32SOIC	3142

Memory

1. Overview

Memory integrated circuits (ICs) are semiconductor devices used for storing digital data in electronic systems. As fundamental components of modern electronics, they enable data retention and retrieval in computers, mobile devices, industrial equipment, and automotive systems. Memory ICs are categorized into volatile (requires power to retain data) and non-volatile (retains data without power) types, playing critical roles in system performance, storage capacity, and energy efficiency.

2. Major Types and Functional Classification

Type	Functional Characteristics	Application Examples
DRAM (Dynamic RAM)	High-density, low-cost, requires periodic refresh	PCs, Servers, Graphics Cards
NAND Flash	Non-volatile, high endurance, block-level access	SSDs, USB Drives, Mobile Storage
SRAM (Static RAM)	High-speed, low density, no refresh required	Cache Memory, Networking Equipment
NOR Flash	Random access, execute-in-place capability	Embedded Systems, Automotive ECUs
MRAM (Magnetoresistive RAM)	Non-volatile, unlimited endurance, low power	IoT Devices, Industrial Sensors

3. Structure and Composition

Memory ICs typically consist of:

Storage Cell Array: Matrix of memory cells (transistors/capacitors for DRAM, floating-gate transistors for Flash)
Address Decoder: Selects specific memory locations
I/O Circuits: Data input/output interfaces
Control Logic: Manages read/write operations and timing
Power Management Units: Optimizes energy consumption

Advanced packages include BGA (Ball Grid Array) and 3D-stacked configurations for density optimization.

4. Key Technical Specifications

Parameter	Description	Importance
Storage Capacity	Data volume (Gb/GiB)	Determines system memory limits
Access Time	ns/predictable latency	Impacts processing speed
Power Consumption	mW/MHz	Affects battery life and thermal design
Endurance	P/E cycles (Flash)	Dictates product lifespan
Data Retention	Years (non-volatile)	Critical for long-term storage

5. Application Areas

Consumer Electronics: Smartphones (NAND Flash), Gaming Consoles (GDDR6)
Industrial Automation: PLCs (SRAM), Data Loggers (MRAM)
Automotive Systems: ADAS (LPDDR5), Infotainment (eMMC)
Enterprise Storage: SSD Controllers (3D NAND), Servers (RDIMM)

6. Leading Manufacturers and Products

Manufacturer	Representative Products
Samsung Electronics	V-NAND (9x-layer), LPDDR5X
SK hynix	HBM3 (8GB/s bandwidth), GDDR6
Microchip Technology	Serial NOR Flash (SST26)
Kioxia Corporation	BiCS FLASH (3D NAND)
Infineon Technologies	MRAM (40nm process)

7. Selection Recommendations

Key considerations:

Match memory type to application requirements (e.g., NOR Flash for code storage)
Evaluate bandwidth vs. latency tradeoffs
Analyze temperature and vibration specifications
Assess long-term supply stability
Optimize cost-per-bit metrics

Case Study: A smartphone manufacturer selected UFS 3.1 (NAND-based) for 2100MB/s read speeds, improving app launch times by 35%.

8. Industry Trends

Future directions include:

3D NAND scaling beyond 200 layers
Emerging memories (ReRAM, PCM) for AI acceleration
Package-on-Package (PoP) integration
AI-optimized memory architectures (Processing-in-Memory)
Green manufacturing processes (EUV lithography)