Memory

Part Number	Description / PDF	Quantity
CY7C1353F-100AC IR (Infineon Technologies)	IC SRAM 4.5MBIT PARALLEL 100TQFP	0
CY7C1514KV18-250BZC IR (Infineon Technologies)	IC SRAM 72MBIT PARALLEL 165FBGA	65
S34ML16G202TFI200 IR (Infineon Technologies)	IC FLSH 16GBIT PARALLEL 48TSOP I	140
CY7C1018CV33-12VXIT IR (Infineon Technologies)	IC SRAM 1MBIT PARALLEL 32SOJ	1000
FM21LD16-60-BG IR (Infineon Technologies)	IC FRAM 2MBIT PARALLEL 48FBGA	14
CY62147DV30LL-70BVXA IR (Infineon Technologies)	IC SRAM 4MBIT PARALLEL 48VFBGA	239
CY62136VNLL-70BAXA IR (Infineon Technologies)	IC SRAM 2MBIT PARALLEL 48FBGA	1117
CY7C1425KV18-250BZXI IR (Infineon Technologies)	IC SRAM 36MBIT PARALLEL 165FBGA	0
CY7C1418KV18-300BZC IR (Infineon Technologies)	IC SRAM 36MBIT PARALLEL 165FBGA	1364
CY7C1512V18-200BZXC IR (Infineon Technologies)	IC SRAM 72MBIT PARALLEL 165FBGA	830
CY7C11681KV18-450BZXC IR (Infineon Technologies)	IC SRAM 18MBIT PARALLEL 165FBGA	948
CY62146G-45ZSXI IR (Infineon Technologies)	IC SRAM 4MBIT PARALLEL 44TSOP II	0
CY7C09169AV-12AXC IR (Infineon Technologies)	IC SRAM 144K PARALLEL 100TQFP	2531
CY7C138-25JXC IR (Infineon Technologies)	IC SRAM 32KBIT PARALLEL 68PLCC	55
S71KL256SC0BHB000 IR (Infineon Technologies)	IC FLASH RAM 256MBIT PAR 24FBGA	1777
CY7C1353S-100AXC IR (Infineon Technologies)	IC SRAM 4.5MBIT PARALLEL 100TQFP	3211
CY7C1911KV18-250BZXC IR (Infineon Technologies)	IC SRAM 18MBIT PARALLEL 165FBGA	201
CY7C1470V33-167AXI IR (Infineon Technologies)	IC SRAM 72MBIT PARALLEL 100TQFP	15
S25FL164K0XBHIS30 IR (Infineon Technologies)	IC FLASH 64MBIT SPI/QUAD 24BGA	225
S25FL512SDPBHI210 IR (Infineon Technologies)	SERIAL FLASH, 512MB	240

Memory

1. Overview

Memory integrated circuits (ICs) are semiconductor devices used for storing digital data in electronic systems. As fundamental components of modern electronics, they enable data retention and retrieval in computers, mobile devices, industrial equipment, and automotive systems. Memory ICs are categorized into volatile (requires power to retain data) and non-volatile (retains data without power) types, playing critical roles in system performance, storage capacity, and energy efficiency.

2. Major Types and Functional Classification

Type	Functional Characteristics	Application Examples
DRAM (Dynamic RAM)	High-density, low-cost, requires periodic refresh	PCs, Servers, Graphics Cards
NAND Flash	Non-volatile, high endurance, block-level access	SSDs, USB Drives, Mobile Storage
SRAM (Static RAM)	High-speed, low density, no refresh required	Cache Memory, Networking Equipment
NOR Flash	Random access, execute-in-place capability	Embedded Systems, Automotive ECUs
MRAM (Magnetoresistive RAM)	Non-volatile, unlimited endurance, low power	IoT Devices, Industrial Sensors

3. Structure and Composition

Memory ICs typically consist of:

Storage Cell Array: Matrix of memory cells (transistors/capacitors for DRAM, floating-gate transistors for Flash)
Address Decoder: Selects specific memory locations
I/O Circuits: Data input/output interfaces
Control Logic: Manages read/write operations and timing
Power Management Units: Optimizes energy consumption

Advanced packages include BGA (Ball Grid Array) and 3D-stacked configurations for density optimization.

4. Key Technical Specifications

Parameter	Description	Importance
Storage Capacity	Data volume (Gb/GiB)	Determines system memory limits
Access Time	ns/predictable latency	Impacts processing speed
Power Consumption	mW/MHz	Affects battery life and thermal design
Endurance	P/E cycles (Flash)	Dictates product lifespan
Data Retention	Years (non-volatile)	Critical for long-term storage

5. Application Areas

Consumer Electronics: Smartphones (NAND Flash), Gaming Consoles (GDDR6)
Industrial Automation: PLCs (SRAM), Data Loggers (MRAM)
Automotive Systems: ADAS (LPDDR5), Infotainment (eMMC)
Enterprise Storage: SSD Controllers (3D NAND), Servers (RDIMM)

6. Leading Manufacturers and Products

Manufacturer	Representative Products
Samsung Electronics	V-NAND (9x-layer), LPDDR5X
SK hynix	HBM3 (8GB/s bandwidth), GDDR6
Microchip Technology	Serial NOR Flash (SST26)
Kioxia Corporation	BiCS FLASH (3D NAND)
Infineon Technologies	MRAM (40nm process)

7. Selection Recommendations

Key considerations:

Match memory type to application requirements (e.g., NOR Flash for code storage)
Evaluate bandwidth vs. latency tradeoffs
Analyze temperature and vibration specifications
Assess long-term supply stability
Optimize cost-per-bit metrics

Case Study: A smartphone manufacturer selected UFS 3.1 (NAND-based) for 2100MB/s read speeds, improving app launch times by 35%.

8. Industry Trends

Future directions include:

3D NAND scaling beyond 200 layers
Emerging memories (ReRAM, PCM) for AI acceleration
Package-on-Package (PoP) integration
AI-optimized memory architectures (Processing-in-Memory)
Green manufacturing processes (EUV lithography)