Memory

Part Number	Description / PDF	Quantity
CY7C1270KV18-400BZXC IR (Infineon Technologies)	DDR SRAM, 1MX36, 0.45NS PBGA165	92
CY7C1460AV25-167AXCT IR (Infineon Technologies)	IC SRAM 36MBIT PARALLEL 100TQFP	20
CY7C1312CV18-200BZC IR (Infineon Technologies)	IC SRAM 18MBIT PARALLEL 165FBGA	293
CY7C1911JV18-300BZC IR (Infineon Technologies)	IC SRAM 18MBIT PARALLEL 165FBGA	300
CY7C1514AV18-200BZC IR (Infineon Technologies)	IC SRAM 72MBIT PARALLEL 165FBGA	291
PEB2447HV1.2 IR (Infineon Technologies)	MTSS (MEMORY TIME SWITCH LARGE)	5174
CY7C1360S-166AXI IR (Infineon Technologies)	IC SRAM 9MBIT PARALLEL 166MHZ	145
CY7C144E-15AXC IR (Infineon Technologies)	IC SRAM 64KBIT PARALLEL 64TQFP	154
CY7C199C-20ZXI IR (Infineon Technologies)	IC SRAM 256KBIT PAR 28TSOP I	645
STK17T88-RF45 IR (Infineon Technologies)	IC NVSRAM 256KBIT PAR 48SSOP	0
CY7C136E-25NXC IR (Infineon Technologies)	IC SRAM 16KBIT PARALLEL 52PQFP	0
S29GL256S10DHI020 IR (Infineon Technologies)	IC FLASH 256MBIT PARALLEL 64FBGA	112
CY7C1019CV33-10ZXA IR (Infineon Technologies)	STANDARD SRAM, 128KX8, 10NS PDSO	12128
CY7C1381S-133AXC IR (Infineon Technologies)	IC SRAM 18MBIT PARALLEL 100TQFP	576
CY7C1413UV18-300BZC IR (Infineon Technologies)	IC SRAM 36MBIT PARALLEL 165FBGA	606
CY7C12501KV18-450BZXC IR (Infineon Technologies)	IC SRAM 36MBIT PARALLEL 165FBGA	2027
CY7C1414KV18-333BZXI IR (Infineon Technologies)	QDR SRAM, 1MX36, 0.45NS PBGA165	165
CY7C1668KV18-450BZXC IR (Infineon Technologies)	IC SRAM 144MBIT PARALLEL 165FBGA	125
CY7C1380D-200AXC IR (Infineon Technologies)	IC SRAM 18MBIT PARALLEL 100TQFP	1543
CY7C1329S-133AXC IR (Infineon Technologies)	IC SRAM 2MBIT PARALLEL 100TQFP	262

Memory

1. Overview

Memory integrated circuits (ICs) are semiconductor devices used for storing digital data in electronic systems. As fundamental components of modern electronics, they enable data retention and retrieval in computers, mobile devices, industrial equipment, and automotive systems. Memory ICs are categorized into volatile (requires power to retain data) and non-volatile (retains data without power) types, playing critical roles in system performance, storage capacity, and energy efficiency.

2. Major Types and Functional Classification

Type	Functional Characteristics	Application Examples
DRAM (Dynamic RAM)	High-density, low-cost, requires periodic refresh	PCs, Servers, Graphics Cards
NAND Flash	Non-volatile, high endurance, block-level access	SSDs, USB Drives, Mobile Storage
SRAM (Static RAM)	High-speed, low density, no refresh required	Cache Memory, Networking Equipment
NOR Flash	Random access, execute-in-place capability	Embedded Systems, Automotive ECUs
MRAM (Magnetoresistive RAM)	Non-volatile, unlimited endurance, low power	IoT Devices, Industrial Sensors

3. Structure and Composition

Memory ICs typically consist of:

Storage Cell Array: Matrix of memory cells (transistors/capacitors for DRAM, floating-gate transistors for Flash)
Address Decoder: Selects specific memory locations
I/O Circuits: Data input/output interfaces
Control Logic: Manages read/write operations and timing
Power Management Units: Optimizes energy consumption

Advanced packages include BGA (Ball Grid Array) and 3D-stacked configurations for density optimization.

4. Key Technical Specifications

Parameter	Description	Importance
Storage Capacity	Data volume (Gb/GiB)	Determines system memory limits
Access Time	ns/predictable latency	Impacts processing speed
Power Consumption	mW/MHz	Affects battery life and thermal design
Endurance	P/E cycles (Flash)	Dictates product lifespan
Data Retention	Years (non-volatile)	Critical for long-term storage

5. Application Areas

Consumer Electronics: Smartphones (NAND Flash), Gaming Consoles (GDDR6)
Industrial Automation: PLCs (SRAM), Data Loggers (MRAM)
Automotive Systems: ADAS (LPDDR5), Infotainment (eMMC)
Enterprise Storage: SSD Controllers (3D NAND), Servers (RDIMM)

6. Leading Manufacturers and Products

Manufacturer	Representative Products
Samsung Electronics	V-NAND (9x-layer), LPDDR5X
SK hynix	HBM3 (8GB/s bandwidth), GDDR6
Microchip Technology	Serial NOR Flash (SST26)
Kioxia Corporation	BiCS FLASH (3D NAND)
Infineon Technologies	MRAM (40nm process)

7. Selection Recommendations

Key considerations:

Match memory type to application requirements (e.g., NOR Flash for code storage)
Evaluate bandwidth vs. latency tradeoffs
Analyze temperature and vibration specifications
Assess long-term supply stability
Optimize cost-per-bit metrics

Case Study: A smartphone manufacturer selected UFS 3.1 (NAND-based) for 2100MB/s read speeds, improving app launch times by 35%.

8. Industry Trends

Future directions include:

3D NAND scaling beyond 200 layers
Emerging memories (ReRAM, PCM) for AI acceleration
Package-on-Package (PoP) integration
AI-optimized memory architectures (Processing-in-Memory)
Green manufacturing processes (EUV lithography)