Memory

Part Number	Description / PDF	Quantity
CY7C1475BV25-133BGXI IR (Infineon Technologies)	ZBT SRAM, 1MX72, 6.5NS PBGA209	192
CY7C1311CV18-200BZC IR (Infineon Technologies)	IC SRAM 18MBIT PARALLEL 165FBGA	190
CY7C1513KV18-250BZC IR (Infineon Technologies)	IC SRAM 72MBIT PARALLEL 165FBGA	333
CY62147DV30L-55ZSXE IR (Infineon Technologies)	IC SRAM 4MBIT PARALLEL 44TSOP II	2948
STK12C68-PF55 IR (Infineon Technologies)	IC NVSRAM 64KBIT PARALLEL 28DIP	3031
CY7C1170KV18-550BZC IR (Infineon Technologies)	IC SRAM 18MBIT PARALLEL 165FBGA	246
CY7C006A-20JC IR (Infineon Technologies)	DUAL-PORT SRAM, 16KX8, 20NS PQCC	0
CY7C1168KV18-400BZC IR (Infineon Technologies)	IC SRAM 18MBIT PARALLEL 165FBGA	887
CY7C1302DV25-167BZXC IR (Infineon Technologies)	IC SRAM 9MBIT PARALLEL 165FBGA	20
CY7C2170KV18-400BZC IR (Infineon Technologies)	IC SRAM 18MBIT PARALLEL 165FBGA	8
CY7C1315TV18-250BZC IR (Infineon Technologies)	IC SRAM 18MBIT PARALLEL 165FBGA	874
S25FL128SAGMFIG00 IR (Infineon Technologies)	IC FLASH 128MBIT SPI/QUAD 16SOIC	0
CY7C1320KV18-333BZC IR (Infineon Technologies)	IC SRAM 18MBIT PARALLEL 165FBGA	252
CY7C09389V-12AXC IR (Infineon Technologies)	IC SRAM 1.152MBIT PAR 100TQFP	680
CY7C1413TV18-250BZC IR (Infineon Technologies)	IC SRAM 36MBIT PARALLEL 165FBGA	273
CY7C1270V18-400BZXC IR (Infineon Technologies)	IC SRAM 36MBIT PARALLEL 165FBGA	1199
CY7C2563XV18-600BZC IR (Infineon Technologies)	IC SRAM 72MBIT PARALLEL 165FBGA	125
CY62136FV30LL-45BVXI IR (Infineon Technologies)	IC SRAM 2MBIT PARALLEL 48VFBGA	6685
CY62256LL-70ZXCT IR (Infineon Technologies)	IC SRAM 256KBIT PAR 28TSOP I	8500
FM24C16B-GTR IR (Infineon Technologies)	IC FRAM 16KBIT I2C 1MHZ 8SOIC	2300

Memory

1. Overview

Memory integrated circuits (ICs) are semiconductor devices used for storing digital data in electronic systems. As fundamental components of modern electronics, they enable data retention and retrieval in computers, mobile devices, industrial equipment, and automotive systems. Memory ICs are categorized into volatile (requires power to retain data) and non-volatile (retains data without power) types, playing critical roles in system performance, storage capacity, and energy efficiency.

2. Major Types and Functional Classification

Type	Functional Characteristics	Application Examples
DRAM (Dynamic RAM)	High-density, low-cost, requires periodic refresh	PCs, Servers, Graphics Cards
NAND Flash	Non-volatile, high endurance, block-level access	SSDs, USB Drives, Mobile Storage
SRAM (Static RAM)	High-speed, low density, no refresh required	Cache Memory, Networking Equipment
NOR Flash	Random access, execute-in-place capability	Embedded Systems, Automotive ECUs
MRAM (Magnetoresistive RAM)	Non-volatile, unlimited endurance, low power	IoT Devices, Industrial Sensors

3. Structure and Composition

Memory ICs typically consist of:

Storage Cell Array: Matrix of memory cells (transistors/capacitors for DRAM, floating-gate transistors for Flash)
Address Decoder: Selects specific memory locations
I/O Circuits: Data input/output interfaces
Control Logic: Manages read/write operations and timing
Power Management Units: Optimizes energy consumption

Advanced packages include BGA (Ball Grid Array) and 3D-stacked configurations for density optimization.

4. Key Technical Specifications

Parameter	Description	Importance
Storage Capacity	Data volume (Gb/GiB)	Determines system memory limits
Access Time	ns/predictable latency	Impacts processing speed
Power Consumption	mW/MHz	Affects battery life and thermal design
Endurance	P/E cycles (Flash)	Dictates product lifespan
Data Retention	Years (non-volatile)	Critical for long-term storage

5. Application Areas

Consumer Electronics: Smartphones (NAND Flash), Gaming Consoles (GDDR6)
Industrial Automation: PLCs (SRAM), Data Loggers (MRAM)
Automotive Systems: ADAS (LPDDR5), Infotainment (eMMC)
Enterprise Storage: SSD Controllers (3D NAND), Servers (RDIMM)

6. Leading Manufacturers and Products

Manufacturer	Representative Products
Samsung Electronics	V-NAND (9x-layer), LPDDR5X
SK hynix	HBM3 (8GB/s bandwidth), GDDR6
Microchip Technology	Serial NOR Flash (SST26)
Kioxia Corporation	BiCS FLASH (3D NAND)
Infineon Technologies	MRAM (40nm process)

7. Selection Recommendations

Key considerations:

Match memory type to application requirements (e.g., NOR Flash for code storage)
Evaluate bandwidth vs. latency tradeoffs
Analyze temperature and vibration specifications
Assess long-term supply stability
Optimize cost-per-bit metrics

Case Study: A smartphone manufacturer selected UFS 3.1 (NAND-based) for 2100MB/s read speeds, improving app launch times by 35%.

8. Industry Trends

Future directions include:

3D NAND scaling beyond 200 layers
Emerging memories (ReRAM, PCM) for AI acceleration
Package-on-Package (PoP) integration
AI-optimized memory architectures (Processing-in-Memory)
Green manufacturing processes (EUV lithography)