Memory

Part Number	Description / PDF	Quantity
CY7C1168KV18-550BZXC IR (Infineon Technologies)	IC SRAM 18MBIT PARALLEL 165FBGA	276
CY62128BNLL-70SXET IR (Infineon Technologies)	IC SRAM 1MBIT 70NS 32SOIC	300
CY7C0251-15AXC IR (Infineon Technologies)	IC SRAM 144K PARALLEL 100TQFP	531
CY7C1911KV18-250BZC IR (Infineon Technologies)	QDR SRAM, 2MX9, 0.45NS, CMOS, PB	199
S25FL256SDSMFV011 IR (Infineon Technologies)	IC FLASH 256MBIT SPI/QUAD 16SOIC	0
CY7C1568KV18-400BZC IR (Infineon Technologies)	DDR SRAM, 4MX18, 0.45NS, CMOS, P	240
CY7C1365CV33-133AXC IR (Infineon Technologies)	CACHE SRAM, 256KX32, 6.5NS PQFP1	968
CY7C1350G-133BGXC IR (Infineon Technologies)	IC SRAM 4.5MBIT PARALLEL 119PBGA	1564
CY14MB064J2-SXI IR (Infineon Technologies)	IC NVSRAM 64KBIT I2C 8SOIC	4681
CY7C1168V18-400BZXC IR (Infineon Technologies)	IC SRAM 18MBIT PARALLEL 165FBGA	602
CY7C0852V-133AXC IR (Infineon Technologies)	IC SRAM 4.5MBIT PARALLEL 176TQFP	130
STK12C68-C45I IR (Infineon Technologies)	IC NVSRAM 64KBIT PARALLEL 28CDIP	10
CY7C1423AV18-267BZXC IR (Infineon Technologies)	IC SRAM 36MBIT PARALLEL 165FBGA	300
CY62256LL-70ZRXIT IR (Infineon Technologies)	IC SRAM 256KBIT PAR 28TSOP I	3000
CY7C1460AV25-200BZI IR (Infineon Technologies)	IC SRAM 36MBIT PARALLEL 165FBGA	74
CY7C1415BV18-200BZXC IR (Infineon Technologies)	IC SRAM 36MBIT PARALLEL 165FBGA	467
CY7C1021BNL-15ZXIT IR (Infineon Technologies)	IC SRAM 1MBIT PARALLEL 44TSOP II	5239
CY7C1007BN-15VXC IR (Infineon Technologies)	IC SRAM 1MBIT PARALLEL 28SOJ	257
CY7C1041CV33-15VXC IR (Infineon Technologies)	IC SRAM 4MBIT PARALLEL 44SOJ	963
CY7C1021B-15ZXC IR (Infineon Technologies)	IC SRAM 1MBIT PARALLEL 44TSOP II	0

Memory

1. Overview

Memory integrated circuits (ICs) are semiconductor devices used for storing digital data in electronic systems. As fundamental components of modern electronics, they enable data retention and retrieval in computers, mobile devices, industrial equipment, and automotive systems. Memory ICs are categorized into volatile (requires power to retain data) and non-volatile (retains data without power) types, playing critical roles in system performance, storage capacity, and energy efficiency.

2. Major Types and Functional Classification

Type	Functional Characteristics	Application Examples
DRAM (Dynamic RAM)	High-density, low-cost, requires periodic refresh	PCs, Servers, Graphics Cards
NAND Flash	Non-volatile, high endurance, block-level access	SSDs, USB Drives, Mobile Storage
SRAM (Static RAM)	High-speed, low density, no refresh required	Cache Memory, Networking Equipment
NOR Flash	Random access, execute-in-place capability	Embedded Systems, Automotive ECUs
MRAM (Magnetoresistive RAM)	Non-volatile, unlimited endurance, low power	IoT Devices, Industrial Sensors

3. Structure and Composition

Memory ICs typically consist of:

Storage Cell Array: Matrix of memory cells (transistors/capacitors for DRAM, floating-gate transistors for Flash)
Address Decoder: Selects specific memory locations
I/O Circuits: Data input/output interfaces
Control Logic: Manages read/write operations and timing
Power Management Units: Optimizes energy consumption

Advanced packages include BGA (Ball Grid Array) and 3D-stacked configurations for density optimization.

4. Key Technical Specifications

Parameter	Description	Importance
Storage Capacity	Data volume (Gb/GiB)	Determines system memory limits
Access Time	ns/predictable latency	Impacts processing speed
Power Consumption	mW/MHz	Affects battery life and thermal design
Endurance	P/E cycles (Flash)	Dictates product lifespan
Data Retention	Years (non-volatile)	Critical for long-term storage

5. Application Areas

Consumer Electronics: Smartphones (NAND Flash), Gaming Consoles (GDDR6)
Industrial Automation: PLCs (SRAM), Data Loggers (MRAM)
Automotive Systems: ADAS (LPDDR5), Infotainment (eMMC)
Enterprise Storage: SSD Controllers (3D NAND), Servers (RDIMM)

6. Leading Manufacturers and Products

Manufacturer	Representative Products
Samsung Electronics	V-NAND (9x-layer), LPDDR5X
SK hynix	HBM3 (8GB/s bandwidth), GDDR6
Microchip Technology	Serial NOR Flash (SST26)
Kioxia Corporation	BiCS FLASH (3D NAND)
Infineon Technologies	MRAM (40nm process)

7. Selection Recommendations

Key considerations:

Match memory type to application requirements (e.g., NOR Flash for code storage)
Evaluate bandwidth vs. latency tradeoffs
Analyze temperature and vibration specifications
Assess long-term supply stability
Optimize cost-per-bit metrics

Case Study: A smartphone manufacturer selected UFS 3.1 (NAND-based) for 2100MB/s read speeds, improving app launch times by 35%.

8. Industry Trends

Future directions include:

3D NAND scaling beyond 200 layers
Emerging memories (ReRAM, PCM) for AI acceleration
Package-on-Package (PoP) integration
AI-optimized memory architectures (Processing-in-Memory)
Green manufacturing processes (EUV lithography)