Memory

Part Number	Description / PDF	Quantity
S34MS16G202BHI000 IR (Infineon Technologies)	IC FLASH 16GBIT PARALLEL 63BGA	237
CY7C1412BV18-200BZXC IR (Infineon Technologies)	IC SRAM 36MBIT PARALLEL 165FBGA	933
CY7C1145KV18-400BZXI IR (Infineon Technologies)	IC SRAM 18MBIT PARALLEL 165FBGA	1555
CY62256VNLL-70ZXA IR (Infineon Technologies)	IC SRAM 256KBIT PAR 28TSOP I	4082
CY7C1514V18-200BZXI IR (Infineon Technologies)	IC SRAM 72MBIT PARALLEL 165FBGA	413
CY7C1645KV18-450BZXI IR (Infineon Technologies)	QDR SRAM, 4MX36, 0.45NS PBGA165	193
CY14B104L-ZS25XI IR (Infineon Technologies)	IC NVSRAM 4MBIT PAR 44TSOP II	25
CY7C1009B-15VXC IR (Infineon Technologies)	IC SRAM 1MBIT PARALLEL 32SOJ	909
S25FS064SAGMFN010 IR (Infineon Technologies)	IC FLASH 64MBIT SPI/QUAD 8SOIC	190
CY7C1513JV18-300BZXC IR (Infineon Technologies)	IC SRAM 72MBIT PARALLEL 165FBGA	362
CY7C199CNL-15VXC IR (Infineon Technologies)	IC SRAM 256KBIT PARALLEL 28SOJ	0
CY7C1318CV18-250BZXC IR (Infineon Technologies)	IC SRAM 18MBIT PARALLEL 165FBGA	253
CY62148EV30LL-55SXI IR (Infineon Technologies)	IC SRAM 4MBIT PARALLEL 32SOIC	244
CY7C1263XV18-633BZXC IR (Infineon Technologies)	IC SRAM 36MBIT PARALLEL 165FBGA	100
CY7C1313CV18-167BZC IR (Infineon Technologies)	IC SRAM 18MBIT PARALLEL 165FBGA	843
CY7C1366S-166AXC IR (Infineon Technologies)	IC SRAM 9MBIT PARALLEL 100TQFP	143
CY7C1263V18-400BZC IR (Infineon Technologies)	IC SRAM 36MBIT PARALLEL 165FBGA	26
CY62136EV30LL-45BVXI IR (Infineon Technologies)	STANDARD SRAM, 128KX16, 45NS PBG	181
CY7C1911KV18-333BZC IR (Infineon Technologies)	IC SRAM 18MBIT PARALLEL 165FBGA	192
CY7C1315BV18-167BZC IR (Infineon Technologies)	IC SRAM 18MBIT PARALLEL 165FBGA	95

Memory

1. Overview

Memory integrated circuits (ICs) are semiconductor devices used for storing digital data in electronic systems. As fundamental components of modern electronics, they enable data retention and retrieval in computers, mobile devices, industrial equipment, and automotive systems. Memory ICs are categorized into volatile (requires power to retain data) and non-volatile (retains data without power) types, playing critical roles in system performance, storage capacity, and energy efficiency.

2. Major Types and Functional Classification

Type	Functional Characteristics	Application Examples
DRAM (Dynamic RAM)	High-density, low-cost, requires periodic refresh	PCs, Servers, Graphics Cards
NAND Flash	Non-volatile, high endurance, block-level access	SSDs, USB Drives, Mobile Storage
SRAM (Static RAM)	High-speed, low density, no refresh required	Cache Memory, Networking Equipment
NOR Flash	Random access, execute-in-place capability	Embedded Systems, Automotive ECUs
MRAM (Magnetoresistive RAM)	Non-volatile, unlimited endurance, low power	IoT Devices, Industrial Sensors

3. Structure and Composition

Memory ICs typically consist of:

Storage Cell Array: Matrix of memory cells (transistors/capacitors for DRAM, floating-gate transistors for Flash)
Address Decoder: Selects specific memory locations
I/O Circuits: Data input/output interfaces
Control Logic: Manages read/write operations and timing
Power Management Units: Optimizes energy consumption

Advanced packages include BGA (Ball Grid Array) and 3D-stacked configurations for density optimization.

4. Key Technical Specifications

Parameter	Description	Importance
Storage Capacity	Data volume (Gb/GiB)	Determines system memory limits
Access Time	ns/predictable latency	Impacts processing speed
Power Consumption	mW/MHz	Affects battery life and thermal design
Endurance	P/E cycles (Flash)	Dictates product lifespan
Data Retention	Years (non-volatile)	Critical for long-term storage

5. Application Areas

Consumer Electronics: Smartphones (NAND Flash), Gaming Consoles (GDDR6)
Industrial Automation: PLCs (SRAM), Data Loggers (MRAM)
Automotive Systems: ADAS (LPDDR5), Infotainment (eMMC)
Enterprise Storage: SSD Controllers (3D NAND), Servers (RDIMM)

6. Leading Manufacturers and Products

Manufacturer	Representative Products
Samsung Electronics	V-NAND (9x-layer), LPDDR5X
SK hynix	HBM3 (8GB/s bandwidth), GDDR6
Microchip Technology	Serial NOR Flash (SST26)
Kioxia Corporation	BiCS FLASH (3D NAND)
Infineon Technologies	MRAM (40nm process)

7. Selection Recommendations

Key considerations:

Match memory type to application requirements (e.g., NOR Flash for code storage)
Evaluate bandwidth vs. latency tradeoffs
Analyze temperature and vibration specifications
Assess long-term supply stability
Optimize cost-per-bit metrics

Case Study: A smartphone manufacturer selected UFS 3.1 (NAND-based) for 2100MB/s read speeds, improving app launch times by 35%.

8. Industry Trends

Future directions include:

3D NAND scaling beyond 200 layers
Emerging memories (ReRAM, PCM) for AI acceleration
Package-on-Package (PoP) integration
AI-optimized memory architectures (Processing-in-Memory)
Green manufacturing processes (EUV lithography)