Memory

Part Number	Description / PDF	Quantity
CY7C1049BV33-15VC IR (Infineon Technologies)	IC SRAM 4MBIT PARALLEL 36SOJ	151
CY7C1413BV18-200BZC IR (Infineon Technologies)	IC SRAM 36MBIT PARALLEL 165FBGA	283
CY7C1570XV18-633BZXC IR (Infineon Technologies)	IC SRAM 72MBIT PARALLEL 165FBGA	288
S29GL512S11DHV020 IR (Infineon Technologies)	IC FLASH 512MBIT PARALLEL 64FBGA	53
S29AS016J70BFI030 IR (Infineon Technologies)	IC FLASH 16MBIT PARALLEL 48FBGA	0
CY7C2570KV18-450BZC IR (Infineon Technologies)	IC SRAM 72MBIT PARALLEL 165FBGA	528
CY7C1338G-100AXCT IR (Infineon Technologies)	IC SRAM 4MBIT PARALLEL 100TQFP	388
CY7C1418UV18-250BZXC IR (Infineon Technologies)	IC SRAM 36MBIT PARALLEL 165FBGA	408
CY7C1311KV18-250BZC IR (Infineon Technologies)	QDR SRAM, 2MX8, 0.45NS, CMOS, PB	125
CY7C1049BNL-17VC IR (Infineon Technologies)	STANDARD SRAM, 512KX8, 17NS PDSO	1350
CY7C1315BV18-200BZXI IR (Infineon Technologies)	IC SRAM 18MBIT PARALLEL 165FBGA	58
STK14CA8-NF35 IR (Infineon Technologies)	IC NVSRAM 1MBIT PARALLEL 32SOIC	4214
CY7C2165KV18-450BZC IR (Infineon Technologies)	QDR SRAM, 512KX36, 0.45NS, CMOS,	471
CY7C168A-20PXC IR (Infineon Technologies)	IC SRAM 16KBIT PARALLEL 20DIP	1255
CY7C1513AV18-250BZC IR (Infineon Technologies)	IC SRAM 72MBIT PARALLEL 165FBGA	1885
CY7C1386KV33-167AXC IR (Infineon Technologies)	CACHE SRAM, 512KX36, 3.4NS PQFP1	110
CY7C1414BV18-200BZC IR (Infineon Technologies)	IC SRAM 36MBIT PARALLEL 165FBGA	1668
CY7C1370D-167AXC IR (Infineon Technologies)	IC SRAM 18MBIT PARALLEL 100TQFP	145
CY7C1480BV33-200BZXI IR (Infineon Technologies)	IC SRAM 72MBIT PARALLEL 165FBGA	415
CY7C1570XV18-600BZXC IR (Infineon Technologies)	IC SRAM 72MBIT PARALLEL 165FBGA	208

Memory

1. Overview

Memory integrated circuits (ICs) are semiconductor devices used for storing digital data in electronic systems. As fundamental components of modern electronics, they enable data retention and retrieval in computers, mobile devices, industrial equipment, and automotive systems. Memory ICs are categorized into volatile (requires power to retain data) and non-volatile (retains data without power) types, playing critical roles in system performance, storage capacity, and energy efficiency.

2. Major Types and Functional Classification

Type	Functional Characteristics	Application Examples
DRAM (Dynamic RAM)	High-density, low-cost, requires periodic refresh	PCs, Servers, Graphics Cards
NAND Flash	Non-volatile, high endurance, block-level access	SSDs, USB Drives, Mobile Storage
SRAM (Static RAM)	High-speed, low density, no refresh required	Cache Memory, Networking Equipment
NOR Flash	Random access, execute-in-place capability	Embedded Systems, Automotive ECUs
MRAM (Magnetoresistive RAM)	Non-volatile, unlimited endurance, low power	IoT Devices, Industrial Sensors

3. Structure and Composition

Memory ICs typically consist of:

Storage Cell Array: Matrix of memory cells (transistors/capacitors for DRAM, floating-gate transistors for Flash)
Address Decoder: Selects specific memory locations
I/O Circuits: Data input/output interfaces
Control Logic: Manages read/write operations and timing
Power Management Units: Optimizes energy consumption

Advanced packages include BGA (Ball Grid Array) and 3D-stacked configurations for density optimization.

4. Key Technical Specifications

Parameter	Description	Importance
Storage Capacity	Data volume (Gb/GiB)	Determines system memory limits
Access Time	ns/predictable latency	Impacts processing speed
Power Consumption	mW/MHz	Affects battery life and thermal design
Endurance	P/E cycles (Flash)	Dictates product lifespan
Data Retention	Years (non-volatile)	Critical for long-term storage

5. Application Areas

Consumer Electronics: Smartphones (NAND Flash), Gaming Consoles (GDDR6)
Industrial Automation: PLCs (SRAM), Data Loggers (MRAM)
Automotive Systems: ADAS (LPDDR5), Infotainment (eMMC)
Enterprise Storage: SSD Controllers (3D NAND), Servers (RDIMM)

6. Leading Manufacturers and Products

Manufacturer	Representative Products
Samsung Electronics	V-NAND (9x-layer), LPDDR5X
SK hynix	HBM3 (8GB/s bandwidth), GDDR6
Microchip Technology	Serial NOR Flash (SST26)
Kioxia Corporation	BiCS FLASH (3D NAND)
Infineon Technologies	MRAM (40nm process)

7. Selection Recommendations

Key considerations:

Match memory type to application requirements (e.g., NOR Flash for code storage)
Evaluate bandwidth vs. latency tradeoffs
Analyze temperature and vibration specifications
Assess long-term supply stability
Optimize cost-per-bit metrics

Case Study: A smartphone manufacturer selected UFS 3.1 (NAND-based) for 2100MB/s read speeds, improving app launch times by 35%.

8. Industry Trends

Future directions include:

3D NAND scaling beyond 200 layers
Emerging memories (ReRAM, PCM) for AI acceleration
Package-on-Package (PoP) integration
AI-optimized memory architectures (Processing-in-Memory)
Green manufacturing processes (EUV lithography)