Memory

Part Number	Description / PDF	Quantity
CY7C11481KV18-400BZC IR (Infineon Technologies)	IC SRAM 18MBIT PARALLEL 165FBGA	59
CY7C199C-15ZXCT IR (Infineon Technologies)	IC SRAM 256KBIT PAR 28TSOP I	1500
CY7C1413KV18-250BZI IR (Infineon Technologies)	QDR SRAM, 2MX18, 0.45NS PBGA165	1180
CY7C1460AV33-167BZC IR (Infineon Technologies)	ZBT SRAM, 1MX36, 3.4NS, CMOS, PB	344
CYD04S72V-133BBC IR (Infineon Technologies)	IC SRAM 4MBIT PARALLEL 484FBGA	1447
CY7C1514AV18-167BZXC IR (Infineon Technologies)	IC SRAM 72MBIT PARALLEL 165FBGA	306
CY7C1415BV18-167BZC IR (Infineon Technologies)	IC SRAM 36MBIT PARALLEL 165FBGA	433
CY7C1021BN-15ZXI IR (Infineon Technologies)	IC SRAM 1MBIT PARALLEL 44TSOP II	3724
CY7C1613KV18-300BZXC IR (Infineon Technologies)	QDR SRAM, 8MX18, 0.45NS PBGA165	183
CY7C1474BV33-200BGC IR (Infineon Technologies)	IC SRAM 72MBIT PARALLEL 209FBGA	78
CY7S1049G30-10VXI IR (Infineon Technologies)	IC SRAM 4MBIT PARALLEL 36SOJ	50
CY7C1345G-100AXI IR (Infineon Technologies)	CACHE SRAM, 128KX36, 8NS PQFP100	840
CY7C1545KV18-400BZC IR (Infineon Technologies)	IC SRAM 72MBIT PARALLEL 165FBGA	800
CYD02S36V18-167BBC IR (Infineon Technologies)	IC SRAM 2MBIT PARALLEL 256FBGA	117
CY7C11481KV18-400BZXC IR (Infineon Technologies)	IC SRAM 18MBIT PARALLEL 165FBGA	907
CY62256NLL-55ZRXE IR (Infineon Technologies)	IC SRAM 256KBIT PAR 28TSOP I	8390
CY7C1338G-100AXC IR (Infineon Technologies)	CACHE SRAM, 128KX32, 8NS PQFP100	774
CYD02S36V-167BBXC IR (Infineon Technologies)	IC SRAM 2MBIT PARALLEL 256FBGA	132
FM18W08-SGTR IR (Infineon Technologies)	IC FRAM 256KBIT PARALLEL 28SOIC	111
CY7C1370SV25-167BZC IR (Infineon Technologies)	IC SRAM 18MBIT PARALLEL 165FBGA	1165

Memory

1. Overview

Memory integrated circuits (ICs) are semiconductor devices used for storing digital data in electronic systems. As fundamental components of modern electronics, they enable data retention and retrieval in computers, mobile devices, industrial equipment, and automotive systems. Memory ICs are categorized into volatile (requires power to retain data) and non-volatile (retains data without power) types, playing critical roles in system performance, storage capacity, and energy efficiency.

2. Major Types and Functional Classification

Type	Functional Characteristics	Application Examples
DRAM (Dynamic RAM)	High-density, low-cost, requires periodic refresh	PCs, Servers, Graphics Cards
NAND Flash	Non-volatile, high endurance, block-level access	SSDs, USB Drives, Mobile Storage
SRAM (Static RAM)	High-speed, low density, no refresh required	Cache Memory, Networking Equipment
NOR Flash	Random access, execute-in-place capability	Embedded Systems, Automotive ECUs
MRAM (Magnetoresistive RAM)	Non-volatile, unlimited endurance, low power	IoT Devices, Industrial Sensors

3. Structure and Composition

Memory ICs typically consist of:

Storage Cell Array: Matrix of memory cells (transistors/capacitors for DRAM, floating-gate transistors for Flash)
Address Decoder: Selects specific memory locations
I/O Circuits: Data input/output interfaces
Control Logic: Manages read/write operations and timing
Power Management Units: Optimizes energy consumption

Advanced packages include BGA (Ball Grid Array) and 3D-stacked configurations for density optimization.

4. Key Technical Specifications

Parameter	Description	Importance
Storage Capacity	Data volume (Gb/GiB)	Determines system memory limits
Access Time	ns/predictable latency	Impacts processing speed
Power Consumption	mW/MHz	Affects battery life and thermal design
Endurance	P/E cycles (Flash)	Dictates product lifespan
Data Retention	Years (non-volatile)	Critical for long-term storage

5. Application Areas

Consumer Electronics: Smartphones (NAND Flash), Gaming Consoles (GDDR6)
Industrial Automation: PLCs (SRAM), Data Loggers (MRAM)
Automotive Systems: ADAS (LPDDR5), Infotainment (eMMC)
Enterprise Storage: SSD Controllers (3D NAND), Servers (RDIMM)

6. Leading Manufacturers and Products

Manufacturer	Representative Products
Samsung Electronics	V-NAND (9x-layer), LPDDR5X
SK hynix	HBM3 (8GB/s bandwidth), GDDR6
Microchip Technology	Serial NOR Flash (SST26)
Kioxia Corporation	BiCS FLASH (3D NAND)
Infineon Technologies	MRAM (40nm process)

7. Selection Recommendations

Key considerations:

Match memory type to application requirements (e.g., NOR Flash for code storage)
Evaluate bandwidth vs. latency tradeoffs
Analyze temperature and vibration specifications
Assess long-term supply stability
Optimize cost-per-bit metrics

Case Study: A smartphone manufacturer selected UFS 3.1 (NAND-based) for 2100MB/s read speeds, improving app launch times by 35%.

8. Industry Trends

Future directions include:

3D NAND scaling beyond 200 layers
Emerging memories (ReRAM, PCM) for AI acceleration
Package-on-Package (PoP) integration
AI-optimized memory architectures (Processing-in-Memory)
Green manufacturing processes (EUV lithography)