Memory

Part Number	Description / PDF	Quantity
CY7C1518AV18-250BZC IR (Infineon Technologies)	IC SRAM 72MBIT PARALLEL 165FBGA	166
CY62147GE30-45BVXI IR (Infineon Technologies)	IC SRAM 4MBIT PARALLEL 48VFBGA	150
CY7C1163KV18-450BZC IR (Infineon Technologies)	IC SRAM 18MBIT PARALLEL 165FBGA	494
S25FS128SDSBHM200 IR (Infineon Technologies)	IC FLASH 128MBIT SPI/QUAD 24BGA	258
STK14C88-NF35TR IR (Infineon Technologies)	IC NVSRAM 256KBIT PAR 32SOIC	0
CY7C1386D-200AXC IR (Infineon Technologies)	IC SRAM 18MBIT PARALLEL 100TQFP	671
CY7C199D-10ZXI IR (Infineon Technologies)	IC SRAM 256KBIT PAR 28TSOP I	0
CY7C148-35PC IR (Infineon Technologies)	IC SRAM 4KBIT PARALLEL 18DIP	780
CY7C136-25JC IR (Infineon Technologies)	IC SRAM 16KBIT PARALLEL 52PLCC	128
CY7C1512KV18-250BZXC IR (Infineon Technologies)	QDR SRAM, 4MX18, 0.45NS PBGA165	368
CYD09S18V18-167BBXC IR (Infineon Technologies)	IC SRAM 9MBIT PARALLEL 256FBGA	171
CY7C1021BNL-15ZSXAT IR (Infineon Technologies)	IC SRAM 1MBIT PARALLEL 44TSOP II	0
CY7C1520KV18-250BZXI IR (Infineon Technologies)	IC SRAM 72MBIT PARALLEL 165FBGA	118
CY7C2568KV18-450BZC IR (Infineon Technologies)	IC SRAM 72MBIT PARALLEL 165FBGA	554
CY7C1356CV25-166AXC IR (Infineon Technologies)	IC SRAM 9MBIT PARALLEL 100TQFP	907
S25FL256SAGMFV011 IR (Infineon Technologies)	IC FLASH 256MBIT SPI/QUAD 16SOIC	654
CY14B101KA-ZS25XI IR (Infineon Technologies)	IC NVSRAM 1MBIT PAR 44TSOP II	6427
CY7C1372D-167AXC IR (Infineon Technologies)	IC SRAM 18MBIT PARALLEL 100TQFP	14
CY7C1248KV18-450BZXC IR (Infineon Technologies)	IC SRAM 36MBIT PARALLEL 165FBGA	220
CY7C1470BV25-200BZC IR (Infineon Technologies)	IC SRAM 72MBIT PARALLEL 165FBGA	0

Memory

1. Overview

Memory integrated circuits (ICs) are semiconductor devices used for storing digital data in electronic systems. As fundamental components of modern electronics, they enable data retention and retrieval in computers, mobile devices, industrial equipment, and automotive systems. Memory ICs are categorized into volatile (requires power to retain data) and non-volatile (retains data without power) types, playing critical roles in system performance, storage capacity, and energy efficiency.

2. Major Types and Functional Classification

Type	Functional Characteristics	Application Examples
DRAM (Dynamic RAM)	High-density, low-cost, requires periodic refresh	PCs, Servers, Graphics Cards
NAND Flash	Non-volatile, high endurance, block-level access	SSDs, USB Drives, Mobile Storage
SRAM (Static RAM)	High-speed, low density, no refresh required	Cache Memory, Networking Equipment
NOR Flash	Random access, execute-in-place capability	Embedded Systems, Automotive ECUs
MRAM (Magnetoresistive RAM)	Non-volatile, unlimited endurance, low power	IoT Devices, Industrial Sensors

3. Structure and Composition

Memory ICs typically consist of:

Storage Cell Array: Matrix of memory cells (transistors/capacitors for DRAM, floating-gate transistors for Flash)
Address Decoder: Selects specific memory locations
I/O Circuits: Data input/output interfaces
Control Logic: Manages read/write operations and timing
Power Management Units: Optimizes energy consumption

Advanced packages include BGA (Ball Grid Array) and 3D-stacked configurations for density optimization.

4. Key Technical Specifications

Parameter	Description	Importance
Storage Capacity	Data volume (Gb/GiB)	Determines system memory limits
Access Time	ns/predictable latency	Impacts processing speed
Power Consumption	mW/MHz	Affects battery life and thermal design
Endurance	P/E cycles (Flash)	Dictates product lifespan
Data Retention	Years (non-volatile)	Critical for long-term storage

5. Application Areas

Consumer Electronics: Smartphones (NAND Flash), Gaming Consoles (GDDR6)
Industrial Automation: PLCs (SRAM), Data Loggers (MRAM)
Automotive Systems: ADAS (LPDDR5), Infotainment (eMMC)
Enterprise Storage: SSD Controllers (3D NAND), Servers (RDIMM)

6. Leading Manufacturers and Products

Manufacturer	Representative Products
Samsung Electronics	V-NAND (9x-layer), LPDDR5X
SK hynix	HBM3 (8GB/s bandwidth), GDDR6
Microchip Technology	Serial NOR Flash (SST26)
Kioxia Corporation	BiCS FLASH (3D NAND)
Infineon Technologies	MRAM (40nm process)

7. Selection Recommendations

Key considerations:

Match memory type to application requirements (e.g., NOR Flash for code storage)
Evaluate bandwidth vs. latency tradeoffs
Analyze temperature and vibration specifications
Assess long-term supply stability
Optimize cost-per-bit metrics

Case Study: A smartphone manufacturer selected UFS 3.1 (NAND-based) for 2100MB/s read speeds, improving app launch times by 35%.

8. Industry Trends

Future directions include:

3D NAND scaling beyond 200 layers
Emerging memories (ReRAM, PCM) for AI acceleration
Package-on-Package (PoP) integration
AI-optimized memory architectures (Processing-in-Memory)
Green manufacturing processes (EUV lithography)