Memory

Part Number	Description / PDF	Quantity
SN74LS600ADW Texas Instruments	MEMORY CIRCUIT, 16KX1, TTL	516
IS42S16400J-6BL ISSI (Integrated Silicon Solution, Inc.)	IC DRAM 64MBIT PARALLEL 54TFBGA	0
71V416L12YG Renesas Electronics America	IC SRAM 4MBIT PARALLEL 44SOJ	0
93LC56AT-I/OT Roving Networks / Microchip Technology	IC EEPROM 2KBIT SPI 2MHZ SOT23-6	0
AT25SF321B-SHB-T Adesto Technologies	IC FLASH 32MBIT SPI/QUAD 8SOIC	605
CY7C1049G30-10ZSXI Cypress Semiconductor	IC SRAM 4MBIT PARALLEL 44TSOP II	0
71V65803S150BQI Renesas Electronics America	IC SRAM 9MBIT PARALLEL 165CABGA	0
71V3577S75BG8 Renesas Electronics America	IC SRAM 4.5MBIT PARALLEL 119PBGA	0
24FC02T-I/MUY Roving Networks / Microchip Technology	IC EEPROM 2KBIT I2C 1MHZ 8UDFN	4953
24AA256T-I/SM Roving Networks / Microchip Technology	IC EEPROM 256KBIT I2C 8SOIJ	1163
AT24C02C-XHM-T Roving Networks / Microchip Technology	IC EEPROM 2KBIT I2C 1MHZ 8TSSOP	4913
AS4C64M8D1-5TINTR Alliance Memory, Inc.	IC DRAM 512MBIT PAR 66TSOP II	0
CAT25C02SE	IC EEPROM 2KBIT SPI 10MHZ 8SOIC	14470
AT25DF041B-XMHNHR-T Adesto Technologies	IC FLASH 4MBIT SPI 85MHZ 8TSSOP	0
W25M512JVBIQ TR Winbond Electronics Corporation	IC FLASH 512MBIT SPI 24TFBGA	0
AT25SF161B-SSHB-B Adesto Technologies	IC FLASH 16MBIT SPI/QUAD 8SOIC	0
CY7C1356SV25-166AXC IR (Infineon Technologies)	IC SRAM 9MBIT PARALLEL 100TQFP	389
SST38VF6401-90-5I-B3KE-T Roving Networks / Microchip Technology	IC FLASH 64MBIT PARALLEL 48TFBGA	0
QS8888A-15V	QS8888 - CACHE SRAM, 16KX4, 15NS	217
CY62147G30-55BVXE Cypress Semiconductor	IC SRAM 4MBIT PARALLEL 48VFBGA	0

Memory

1. Overview

Memory integrated circuits (ICs) are semiconductor devices used for storing digital data in electronic systems. As fundamental components of modern electronics, they enable data retention and retrieval in computers, mobile devices, industrial equipment, and automotive systems. Memory ICs are categorized into volatile (requires power to retain data) and non-volatile (retains data without power) types, playing critical roles in system performance, storage capacity, and energy efficiency.

2. Major Types and Functional Classification

Type	Functional Characteristics	Application Examples
DRAM (Dynamic RAM)	High-density, low-cost, requires periodic refresh	PCs, Servers, Graphics Cards
NAND Flash	Non-volatile, high endurance, block-level access	SSDs, USB Drives, Mobile Storage
SRAM (Static RAM)	High-speed, low density, no refresh required	Cache Memory, Networking Equipment
NOR Flash	Random access, execute-in-place capability	Embedded Systems, Automotive ECUs
MRAM (Magnetoresistive RAM)	Non-volatile, unlimited endurance, low power	IoT Devices, Industrial Sensors

3. Structure and Composition

Memory ICs typically consist of:

Storage Cell Array: Matrix of memory cells (transistors/capacitors for DRAM, floating-gate transistors for Flash)
Address Decoder: Selects specific memory locations
I/O Circuits: Data input/output interfaces
Control Logic: Manages read/write operations and timing
Power Management Units: Optimizes energy consumption

Advanced packages include BGA (Ball Grid Array) and 3D-stacked configurations for density optimization.

4. Key Technical Specifications

Parameter	Description	Importance
Storage Capacity	Data volume (Gb/GiB)	Determines system memory limits
Access Time	ns/predictable latency	Impacts processing speed
Power Consumption	mW/MHz	Affects battery life and thermal design
Endurance	P/E cycles (Flash)	Dictates product lifespan
Data Retention	Years (non-volatile)	Critical for long-term storage

5. Application Areas

Consumer Electronics: Smartphones (NAND Flash), Gaming Consoles (GDDR6)
Industrial Automation: PLCs (SRAM), Data Loggers (MRAM)
Automotive Systems: ADAS (LPDDR5), Infotainment (eMMC)
Enterprise Storage: SSD Controllers (3D NAND), Servers (RDIMM)

6. Leading Manufacturers and Products

Manufacturer	Representative Products
Samsung Electronics	V-NAND (9x-layer), LPDDR5X
SK hynix	HBM3 (8GB/s bandwidth), GDDR6
Microchip Technology	Serial NOR Flash (SST26)
Kioxia Corporation	BiCS FLASH (3D NAND)
Infineon Technologies	MRAM (40nm process)

7. Selection Recommendations

Key considerations:

Match memory type to application requirements (e.g., NOR Flash for code storage)
Evaluate bandwidth vs. latency tradeoffs
Analyze temperature and vibration specifications
Assess long-term supply stability
Optimize cost-per-bit metrics

Case Study: A smartphone manufacturer selected UFS 3.1 (NAND-based) for 2100MB/s read speeds, improving app launch times by 35%.

8. Industry Trends

Future directions include:

3D NAND scaling beyond 200 layers
Emerging memories (ReRAM, PCM) for AI acceleration
Package-on-Package (PoP) integration
AI-optimized memory architectures (Processing-in-Memory)
Green manufacturing processes (EUV lithography)