Memory

Part Number	Description / PDF	Quantity
AT25128-10PC-2.7 Atmel (Microchip Technology)	IC EEPROM 128KBIT SPI 3MHZ 8DIP	4212
S25FL256SDSMFBG00 Cypress Semiconductor	IC FLASH 256MBIT SPI/QUAD 16SOIC	3868
25AA080D-I/P Roving Networks / Microchip Technology	IC EEPROM 8KBIT SPI 10MHZ 8DIP	0
24AA128-I/SN Roving Networks / Microchip Technology	IC EEPROM 128KBIT I2C 8SOIC	253
CY7C1512V18-200BZC IR (Infineon Technologies)	IC SRAM 72MBIT PARALLEL 165FBGA	651
25AA080BT-I/ST Roving Networks / Microchip Technology	IC EEPROM 8KBIT SPI 10MHZ 8TSSOP	0
IS43R83200F-5TL-TR ISSI (Integrated Silicon Solution, Inc.)	IC DRAM 256MBIT PAR 66TSOP II	0
CY7C1041CV33-12VI Rochester Electronics	STANDARD SRAM, 256KX16	9160
93LC56AXT-I/SN Roving Networks / Microchip Technology	IC EEPROM 2KBIT SPI 2MHZ 8SOIC	0
SST25VF016B-50-4I-QAF-T Roving Networks / Microchip Technology	IC FLASH 16MBIT SPI 50MHZ 8WSON	4218
AS4C512M16D3L-12BIN Alliance Memory, Inc.	IC DRAM 8GBIT PARALLEL 96FBGA	0
S25FL132K0XNFI013 Flip Electronics	IC FLASH 32MBIT SPI/QUAD 8WSON	230
CY7C1380D-167BZC IR (Infineon Technologies)	IC SRAM 18MBIT PARALLEL 165FBGA	1811
R1LV0408DSA-5SR#B0 Renesas Electronics America	IC SRAM 4MBIT PARALLEL 32STSOP	3466
S26KS256SDPBHB020 Cypress Semiconductor	IC FLASH 256MBIT PARALLEL 24FBGA	0
AT25XV021A-MHV-Y Adesto Technologies	IC FLASH 2MBIT SPI 70MHZ 8UDFN	0
CY15B128J-SXA IR (Infineon Technologies)	IC FRAM 128KBIT I2C 3.4MHZ 8SOIC	148
CY7C1061G-10ZSXIT Cypress Semiconductor	IC SRAM 16MBIT PAR 54TSOP II	0
71V2556SA100BG8 Renesas Electronics America	IC SRAM 4.5MBIT PARALLEL 119PBGA	0
MT40A1G8WE-075E AIT:B TR Micron Technology	IC DRAM 8GBIT PARALLEL 78FBGA	0

Memory

1. Overview

Memory integrated circuits (ICs) are semiconductor devices used for storing digital data in electronic systems. As fundamental components of modern electronics, they enable data retention and retrieval in computers, mobile devices, industrial equipment, and automotive systems. Memory ICs are categorized into volatile (requires power to retain data) and non-volatile (retains data without power) types, playing critical roles in system performance, storage capacity, and energy efficiency.

2. Major Types and Functional Classification

Type	Functional Characteristics	Application Examples
DRAM (Dynamic RAM)	High-density, low-cost, requires periodic refresh	PCs, Servers, Graphics Cards
NAND Flash	Non-volatile, high endurance, block-level access	SSDs, USB Drives, Mobile Storage
SRAM (Static RAM)	High-speed, low density, no refresh required	Cache Memory, Networking Equipment
NOR Flash	Random access, execute-in-place capability	Embedded Systems, Automotive ECUs
MRAM (Magnetoresistive RAM)	Non-volatile, unlimited endurance, low power	IoT Devices, Industrial Sensors

3. Structure and Composition

Memory ICs typically consist of:

Storage Cell Array: Matrix of memory cells (transistors/capacitors for DRAM, floating-gate transistors for Flash)
Address Decoder: Selects specific memory locations
I/O Circuits: Data input/output interfaces
Control Logic: Manages read/write operations and timing
Power Management Units: Optimizes energy consumption

Advanced packages include BGA (Ball Grid Array) and 3D-stacked configurations for density optimization.

4. Key Technical Specifications

Parameter	Description	Importance
Storage Capacity	Data volume (Gb/GiB)	Determines system memory limits
Access Time	ns/predictable latency	Impacts processing speed
Power Consumption	mW/MHz	Affects battery life and thermal design
Endurance	P/E cycles (Flash)	Dictates product lifespan
Data Retention	Years (non-volatile)	Critical for long-term storage

5. Application Areas

Consumer Electronics: Smartphones (NAND Flash), Gaming Consoles (GDDR6)
Industrial Automation: PLCs (SRAM), Data Loggers (MRAM)
Automotive Systems: ADAS (LPDDR5), Infotainment (eMMC)
Enterprise Storage: SSD Controllers (3D NAND), Servers (RDIMM)

6. Leading Manufacturers and Products

Manufacturer	Representative Products
Samsung Electronics	V-NAND (9x-layer), LPDDR5X
SK hynix	HBM3 (8GB/s bandwidth), GDDR6
Microchip Technology	Serial NOR Flash (SST26)
Kioxia Corporation	BiCS FLASH (3D NAND)
Infineon Technologies	MRAM (40nm process)

7. Selection Recommendations

Key considerations:

Match memory type to application requirements (e.g., NOR Flash for code storage)
Evaluate bandwidth vs. latency tradeoffs
Analyze temperature and vibration specifications
Assess long-term supply stability
Optimize cost-per-bit metrics

Case Study: A smartphone manufacturer selected UFS 3.1 (NAND-based) for 2100MB/s read speeds, improving app launch times by 35%.

8. Industry Trends

Future directions include:

3D NAND scaling beyond 200 layers
Emerging memories (ReRAM, PCM) for AI acceleration
Package-on-Package (PoP) integration
AI-optimized memory architectures (Processing-in-Memory)
Green manufacturing processes (EUV lithography)