Memory

Part Number	Description / PDF	Quantity
X28C512P-12	EEPROM, 64KX8	674
IS62WV2568BLL-55BLI-TR ISSI (Integrated Silicon Solution, Inc.)	IC SRAM 2MBIT PARALLEL 36TFBGA	0
24LC024T-E/MNY Roving Networks / Microchip Technology	IC EEPROM 2KBIT I2C 400KHZ 8TDFN	0
BR24T64-WZ ROHM Semiconductor	IC EEPROM 64K I2C 400KHZ DIP8K	1296
6116SA45TPG	SRAM 16K (2K X 8-BIT)	0
24LC256-I/MS Roving Networks / Microchip Technology	IC EEPROM 256KBIT I2C 8MSOP	8136
MT55L256L18P1F-10 Micron Technology	ZBT SRAM, 256KX18, 5NS PBGA165	149
IS46TR16640ED-15HBLA1 ISSI (Integrated Silicon Solution, Inc.)	IC DRAM 1GBIT PARALLEL 96TWBGA	0
CAT28LV65J-25	IC EEPROM 64KBIT PARALLEL 28SOIC	1007
BR24C16-DW6TP ROHM Semiconductor	IC EEPROM 16KBIT I2C 8TSSOP	0
71V67903S75PFG Renesas Electronics America	IC SRAM 9MBIT PARALLEL 100TQFP	0
GS81313LQ18GK-800I GSI Technology	IC SRAM 144MBIT PARALLEL 260BGA	5
CY7C1461KV33-133AXC Cypress Semiconductor	IC SRAM 36MBIT PARALLEL 100TQFP	0
S29AL008J55BFIR20 Cypress Semiconductor	IC FLASH 8MBIT PARALLEL 48FBGA	481
11LC020T-E/MNY Roving Networks / Microchip Technology	IC EEPROM 2KBIT SGL WIRE 8TDFN	0
IS65C256AL-25ULA3 ISSI (Integrated Silicon Solution, Inc.)	IC SRAM 256KBIT PARALLEL 28SOP	0
MT55L256L32PT-10IT Micron Technology	ZBT SRAM, 256KX32, 5NS PQFP100	2223
CY7C1520KV18-333BZXC IR (Infineon Technologies)	IC SRAM 72MBIT PARALLEL 165FBGA	4641
CY7C1061G30-10BVJXIT Cypress Semiconductor	IC SRAM 16MBIT PARALLEL 48VFBGA	0
FT24C32A-EDR-B Fremont Micro Devices	IC EEPROM 32KBIT I2C 1MHZ 8DIP	0

Memory

1. Overview

Memory integrated circuits (ICs) are semiconductor devices used for storing digital data in electronic systems. As fundamental components of modern electronics, they enable data retention and retrieval in computers, mobile devices, industrial equipment, and automotive systems. Memory ICs are categorized into volatile (requires power to retain data) and non-volatile (retains data without power) types, playing critical roles in system performance, storage capacity, and energy efficiency.

2. Major Types and Functional Classification

Type	Functional Characteristics	Application Examples
DRAM (Dynamic RAM)	High-density, low-cost, requires periodic refresh	PCs, Servers, Graphics Cards
NAND Flash	Non-volatile, high endurance, block-level access	SSDs, USB Drives, Mobile Storage
SRAM (Static RAM)	High-speed, low density, no refresh required	Cache Memory, Networking Equipment
NOR Flash	Random access, execute-in-place capability	Embedded Systems, Automotive ECUs
MRAM (Magnetoresistive RAM)	Non-volatile, unlimited endurance, low power	IoT Devices, Industrial Sensors

3. Structure and Composition

Memory ICs typically consist of:

Storage Cell Array: Matrix of memory cells (transistors/capacitors for DRAM, floating-gate transistors for Flash)
Address Decoder: Selects specific memory locations
I/O Circuits: Data input/output interfaces
Control Logic: Manages read/write operations and timing
Power Management Units: Optimizes energy consumption

Advanced packages include BGA (Ball Grid Array) and 3D-stacked configurations for density optimization.

4. Key Technical Specifications

Parameter	Description	Importance
Storage Capacity	Data volume (Gb/GiB)	Determines system memory limits
Access Time	ns/predictable latency	Impacts processing speed
Power Consumption	mW/MHz	Affects battery life and thermal design
Endurance	P/E cycles (Flash)	Dictates product lifespan
Data Retention	Years (non-volatile)	Critical for long-term storage

5. Application Areas

Consumer Electronics: Smartphones (NAND Flash), Gaming Consoles (GDDR6)
Industrial Automation: PLCs (SRAM), Data Loggers (MRAM)
Automotive Systems: ADAS (LPDDR5), Infotainment (eMMC)
Enterprise Storage: SSD Controllers (3D NAND), Servers (RDIMM)

6. Leading Manufacturers and Products

Manufacturer	Representative Products
Samsung Electronics	V-NAND (9x-layer), LPDDR5X
SK hynix	HBM3 (8GB/s bandwidth), GDDR6
Microchip Technology	Serial NOR Flash (SST26)
Kioxia Corporation	BiCS FLASH (3D NAND)
Infineon Technologies	MRAM (40nm process)

7. Selection Recommendations

Key considerations:

Match memory type to application requirements (e.g., NOR Flash for code storage)
Evaluate bandwidth vs. latency tradeoffs
Analyze temperature and vibration specifications
Assess long-term supply stability
Optimize cost-per-bit metrics

Case Study: A smartphone manufacturer selected UFS 3.1 (NAND-based) for 2100MB/s read speeds, improving app launch times by 35%.

8. Industry Trends

Future directions include:

3D NAND scaling beyond 200 layers
Emerging memories (ReRAM, PCM) for AI acceleration
Package-on-Package (PoP) integration
AI-optimized memory architectures (Processing-in-Memory)
Green manufacturing processes (EUV lithography)