Memory

Part Number	Description / PDF	Quantity
DS2502+T&R Maxim Integrated	IC EPROM 1KBIT 1-WIRE TO92-3	1337
BR25H160FVT-2CE2 ROHM Semiconductor	IC EEPROM 16KBIT SPI 8TSSOPB	2990
AS7C4098A-20TIN Alliance Memory, Inc.	IC SRAM 4MBIT PARALLEL 44TSOP2	135
71V3579S65PFG Renesas Electronics America	IC SRAM 4.5MBIT PARALLEL 100TQFP	652
CY62136EV30LL-45BVXIT IR (Infineon Technologies)	IC SRAM 2MBIT PARALLEL 48VFBGA	666
S27KL0641DABHV030 Cypress Semiconductor	IC PSRAM 64MBIT PARALLEL 24FBGA	0
11LC080T-I/MS Roving Networks / Microchip Technology	IC EEPROM 8KBIT SGL WIRE 8MSOP	0
R1LV0416CSB-7LI#S0 Renesas Electronics America	IC SRAM 4MBIT PARALLEL 44TSOP II	69990
71V3577S80PFI	IC SRAM 4.5MBIT PARALLEL 100TQFP	3178
CY7C1021DV33-10ZSXA IR (Infineon Technologies)	IC SRAM 1MBIT PARALLEL 44TSOP II	0
70V05L15JG Renesas Electronics America	IC SRAM 64KBIT PARALLEL 68PLCC	0
MR256DL08BMA45 Everspin Technologies, Inc.	IC RAM 256KBIT PARALLEL 48FBGA	0
S29AL016J55TFI023 Cypress Semiconductor	IC FLASH 16MBIT PARALLEL 48TSOP	0
25LC160C-E/SN Roving Networks / Microchip Technology	IC EEPROM 16KBIT SPI 10MHZ 8SOIC	0
24FC128-I/P Roving Networks / Microchip Technology	IC EEPROM 128KBIT I2C 1MHZ 8DIP	119
S-25C128A0I-T8T1U3 ABLIC U.S.A. Inc.	IC EEPROM 128KBIT SPI 8TSSOP	0
BR24A08F-WLBH2 ROHM Semiconductor	IC EEPROM 8KBIT I2C 400KHZ 8SOP	204
S25FL128LAGMFB003 Cypress Semiconductor	IC FLASH 128MBIT SPI/QUAD 16SOIC	0
93C46B-I/SN Roving Networks / Microchip Technology	IC EEPROM 1KBIT SPI 2MHZ 8SOIC	3330
M5M51008DVP-70H#ST Renesas Electronics America	STANDARD SRAM, 128KX8, 70NS	442

Memory

1. Overview

Memory integrated circuits (ICs) are semiconductor devices used for storing digital data in electronic systems. As fundamental components of modern electronics, they enable data retention and retrieval in computers, mobile devices, industrial equipment, and automotive systems. Memory ICs are categorized into volatile (requires power to retain data) and non-volatile (retains data without power) types, playing critical roles in system performance, storage capacity, and energy efficiency.

2. Major Types and Functional Classification

Type	Functional Characteristics	Application Examples
DRAM (Dynamic RAM)	High-density, low-cost, requires periodic refresh	PCs, Servers, Graphics Cards
NAND Flash	Non-volatile, high endurance, block-level access	SSDs, USB Drives, Mobile Storage
SRAM (Static RAM)	High-speed, low density, no refresh required	Cache Memory, Networking Equipment
NOR Flash	Random access, execute-in-place capability	Embedded Systems, Automotive ECUs
MRAM (Magnetoresistive RAM)	Non-volatile, unlimited endurance, low power	IoT Devices, Industrial Sensors

3. Structure and Composition

Memory ICs typically consist of:

Storage Cell Array: Matrix of memory cells (transistors/capacitors for DRAM, floating-gate transistors for Flash)
Address Decoder: Selects specific memory locations
I/O Circuits: Data input/output interfaces
Control Logic: Manages read/write operations and timing
Power Management Units: Optimizes energy consumption

Advanced packages include BGA (Ball Grid Array) and 3D-stacked configurations for density optimization.

4. Key Technical Specifications

Parameter	Description	Importance
Storage Capacity	Data volume (Gb/GiB)	Determines system memory limits
Access Time	ns/predictable latency	Impacts processing speed
Power Consumption	mW/MHz	Affects battery life and thermal design
Endurance	P/E cycles (Flash)	Dictates product lifespan
Data Retention	Years (non-volatile)	Critical for long-term storage

5. Application Areas

Consumer Electronics: Smartphones (NAND Flash), Gaming Consoles (GDDR6)
Industrial Automation: PLCs (SRAM), Data Loggers (MRAM)
Automotive Systems: ADAS (LPDDR5), Infotainment (eMMC)
Enterprise Storage: SSD Controllers (3D NAND), Servers (RDIMM)

6. Leading Manufacturers and Products

Manufacturer	Representative Products
Samsung Electronics	V-NAND (9x-layer), LPDDR5X
SK hynix	HBM3 (8GB/s bandwidth), GDDR6
Microchip Technology	Serial NOR Flash (SST26)
Kioxia Corporation	BiCS FLASH (3D NAND)
Infineon Technologies	MRAM (40nm process)

7. Selection Recommendations

Key considerations:

Match memory type to application requirements (e.g., NOR Flash for code storage)
Evaluate bandwidth vs. latency tradeoffs
Analyze temperature and vibration specifications
Assess long-term supply stability
Optimize cost-per-bit metrics

Case Study: A smartphone manufacturer selected UFS 3.1 (NAND-based) for 2100MB/s read speeds, improving app launch times by 35%.

8. Industry Trends

Future directions include:

3D NAND scaling beyond 200 layers
Emerging memories (ReRAM, PCM) for AI acceleration
Package-on-Package (PoP) integration
AI-optimized memory architectures (Processing-in-Memory)
Green manufacturing processes (EUV lithography)