Memory

Part Number	Description / PDF	Quantity
7132SA100C Renesas Electronics America	IC SRAM 16KBIT PARALLEL SB48	0
S25FL064LABMFB010 Cypress Semiconductor	IC FLASH 64MBIT SPI/QUAD 8SOIC	0
AS7C31025B-15TJCNTR Alliance Memory, Inc.	IC SRAM 1MBIT PARALLEL 32SOJ	0
CY14B256KA-SP25XI IR (Infineon Technologies)	IC NVSRAM 256KBIT PAR 48SSOP	0
71V35761SA183BGG Renesas Electronics America	IC SRAM 4.5MBIT PARALLEL 119PBGA	0
MB85RS1MTPW-G-APEWE1 Fujitsu Electronics America, Inc.	IC FRAM 1MBIT SPI 40MHZ 8WLP	1463
W25Q40CLSNIG TR Winbond Electronics Corporation	IC FLASH 4MBIT SPI 104MHZ 8SOIC	0
IS43LD32640B-25BL-TR ISSI (Integrated Silicon Solution, Inc.)	IC DRAM 2GBIT PARALLEL 134TFBGA	0
CY62126EV30LL-55ZSXE IR (Infineon Technologies)	IC SRAM 1MBIT PARALLEL 44TSOP II	8137
CY62147G30-45ZSXAT Cypress Semiconductor	IC SRAM 4MBIT PARALLEL 44TSOP II	0
MX29GL640ETXEI-70G Macronix	IC FLASH 64MBIT PARALLEL 48LFBGA	0
AD1816AJS-EEPROM Analog Devices, Inc.	SOUND PORT CONTROLLER W/EEPROM	223
FT24C04A-KTG-T Fremont Micro Devices	IC EEPROM 4KBIT I2C 1MHZ 8TSSOP	0
NM24C09LEM8	IC EEPROM 8KBIT I2C 100KHZ 8SOIC	4935
CY7C1418BV18-167BZC IR (Infineon Technologies)	DDR SRAM, 2MX18, 0.5NS, CMOS, PB	256
SST25VF016B-50-4I-S2AF Roving Networks / Microchip Technology	IC FLASH 16MBIT SPI 50MHZ 8SOIC	0
23LC512T-E/SN Roving Networks / Microchip Technology	IC SRAM 512KBIT SPI/QUAD 8SOIC	0
MX25L6473EMBI-10G Macronix	IC FLASH 64MBIT SPI 104MHZ 8VSOP	0
BR93G66FVT-3GE2 ROHM Semiconductor	IC EEPROM 4KBIT SPI 3MHZ 8TSSOPB	2950
RM25C64DS-LSNI-B Adesto Technologies	IC CBRAM 64KBIT SPI 20MHZ 8SOIC	0

Memory

1. Overview

Memory integrated circuits (ICs) are semiconductor devices used for storing digital data in electronic systems. As fundamental components of modern electronics, they enable data retention and retrieval in computers, mobile devices, industrial equipment, and automotive systems. Memory ICs are categorized into volatile (requires power to retain data) and non-volatile (retains data without power) types, playing critical roles in system performance, storage capacity, and energy efficiency.

2. Major Types and Functional Classification

Type	Functional Characteristics	Application Examples
DRAM (Dynamic RAM)	High-density, low-cost, requires periodic refresh	PCs, Servers, Graphics Cards
NAND Flash	Non-volatile, high endurance, block-level access	SSDs, USB Drives, Mobile Storage
SRAM (Static RAM)	High-speed, low density, no refresh required	Cache Memory, Networking Equipment
NOR Flash	Random access, execute-in-place capability	Embedded Systems, Automotive ECUs
MRAM (Magnetoresistive RAM)	Non-volatile, unlimited endurance, low power	IoT Devices, Industrial Sensors

3. Structure and Composition

Memory ICs typically consist of:

Storage Cell Array: Matrix of memory cells (transistors/capacitors for DRAM, floating-gate transistors for Flash)
Address Decoder: Selects specific memory locations
I/O Circuits: Data input/output interfaces
Control Logic: Manages read/write operations and timing
Power Management Units: Optimizes energy consumption

Advanced packages include BGA (Ball Grid Array) and 3D-stacked configurations for density optimization.

4. Key Technical Specifications

Parameter	Description	Importance
Storage Capacity	Data volume (Gb/GiB)	Determines system memory limits
Access Time	ns/predictable latency	Impacts processing speed
Power Consumption	mW/MHz	Affects battery life and thermal design
Endurance	P/E cycles (Flash)	Dictates product lifespan
Data Retention	Years (non-volatile)	Critical for long-term storage

5. Application Areas

Consumer Electronics: Smartphones (NAND Flash), Gaming Consoles (GDDR6)
Industrial Automation: PLCs (SRAM), Data Loggers (MRAM)
Automotive Systems: ADAS (LPDDR5), Infotainment (eMMC)
Enterprise Storage: SSD Controllers (3D NAND), Servers (RDIMM)

6. Leading Manufacturers and Products

Manufacturer	Representative Products
Samsung Electronics	V-NAND (9x-layer), LPDDR5X
SK hynix	HBM3 (8GB/s bandwidth), GDDR6
Microchip Technology	Serial NOR Flash (SST26)
Kioxia Corporation	BiCS FLASH (3D NAND)
Infineon Technologies	MRAM (40nm process)

7. Selection Recommendations

Key considerations:

Match memory type to application requirements (e.g., NOR Flash for code storage)
Evaluate bandwidth vs. latency tradeoffs
Analyze temperature and vibration specifications
Assess long-term supply stability
Optimize cost-per-bit metrics

Case Study: A smartphone manufacturer selected UFS 3.1 (NAND-based) for 2100MB/s read speeds, improving app launch times by 35%.

8. Industry Trends

Future directions include:

3D NAND scaling beyond 200 layers
Emerging memories (ReRAM, PCM) for AI acceleration
Package-on-Package (PoP) integration
AI-optimized memory architectures (Processing-in-Memory)
Green manufacturing processes (EUV lithography)