Memory

Part Number	Description / PDF	Quantity
25AA02E64T-I/OT Roving Networks / Microchip Technology	IC EEPROM 2KBIT SPI SOT23-6	5583
CY62137CV30LL-70BVXI Rochester Electronics	STANDARD SRAM, 128KX16	463
25LC020AT-E/ST Roving Networks / Microchip Technology	IC EEPROM 2KBIT SPI 10MHZ 8TSSOP	0
RM24C128C-LMAI-T Adesto Technologies	IC CBRAM 128KBIT I2C 1MHZ 8UDFN	0
AT45DB081E-SSHNHC-T Adesto Technologies	IC FLASH 8MBIT SPI 85MHZ 8SOIC	0
24LC025/SN Roving Networks / Microchip Technology	IC EEPROM 2KBIT I2C 400KHZ 8SOIC	0
BR24S08NUX-WTR ROHM Semiconductor	IC EEPROM 8KBIT I2C VSON008X2030	0
S29GL512T12TFVV23 Cypress Semiconductor	IC FLASH 512MBIT PARALLEL 56TSOP	0
70V07L35PFGI Renesas Electronics America	IC SRAM 256KBIT PARALLEL 80TQFP	0
CY7C026AV-25AXI Flip Electronics	IC SRAM 256KBIT PARALLEL 100TQFP	138
CAV24C02YE-GT3 Sanyo Semiconductor/ON Semiconductor	IC EEPROM 2KBIT I2C 8TSSOP	1534
IS45S16160J-7TLA1-TR ISSI (Integrated Silicon Solution, Inc.)	IC DRAM 256MBIT PAR 54TSOP II	0
CY7C1046DV33-10VXI Flip Electronics	IC SRAM 4MBIT PARALLEL 32SOJ	0
M48Z58Y-70PC1 STMicroelectronics	IC NVSRAM 64KBIT PAR 28PCDIP	458
CY14MB064Q1A-SXI IR (Infineon Technologies)	NON-VOLATILE SRAM, 8KX8, CMOS, P	3358
FM24C02UEN	IC EEPROM 2KBIT I2C 100KHZ 8DIP	0
S29GL512S11TFA020 Cypress Semiconductor	IC FLASH 512MBIT PARALLEL 56TSOP	0
93AA46A-I/P Roving Networks / Microchip Technology	IC EEPROM 1KBIT SPI 2MHZ 8DIP	0
AF064GEC5A-2001EX ATP Electronics, Inc.	IC 64GBIT 153BGA	5
AT21CS11-SSH10-T Roving Networks / Microchip Technology	IC EEPROM 1KBIT I2C 125KHZ 8SOIC	3971

Memory

1. Overview

Memory integrated circuits (ICs) are semiconductor devices used for storing digital data in electronic systems. As fundamental components of modern electronics, they enable data retention and retrieval in computers, mobile devices, industrial equipment, and automotive systems. Memory ICs are categorized into volatile (requires power to retain data) and non-volatile (retains data without power) types, playing critical roles in system performance, storage capacity, and energy efficiency.

2. Major Types and Functional Classification

Type	Functional Characteristics	Application Examples
DRAM (Dynamic RAM)	High-density, low-cost, requires periodic refresh	PCs, Servers, Graphics Cards
NAND Flash	Non-volatile, high endurance, block-level access	SSDs, USB Drives, Mobile Storage
SRAM (Static RAM)	High-speed, low density, no refresh required	Cache Memory, Networking Equipment
NOR Flash	Random access, execute-in-place capability	Embedded Systems, Automotive ECUs
MRAM (Magnetoresistive RAM)	Non-volatile, unlimited endurance, low power	IoT Devices, Industrial Sensors

3. Structure and Composition

Memory ICs typically consist of:

Storage Cell Array: Matrix of memory cells (transistors/capacitors for DRAM, floating-gate transistors for Flash)
Address Decoder: Selects specific memory locations
I/O Circuits: Data input/output interfaces
Control Logic: Manages read/write operations and timing
Power Management Units: Optimizes energy consumption

Advanced packages include BGA (Ball Grid Array) and 3D-stacked configurations for density optimization.

4. Key Technical Specifications

Parameter	Description	Importance
Storage Capacity	Data volume (Gb/GiB)	Determines system memory limits
Access Time	ns/predictable latency	Impacts processing speed
Power Consumption	mW/MHz	Affects battery life and thermal design
Endurance	P/E cycles (Flash)	Dictates product lifespan
Data Retention	Years (non-volatile)	Critical for long-term storage

5. Application Areas

Consumer Electronics: Smartphones (NAND Flash), Gaming Consoles (GDDR6)
Industrial Automation: PLCs (SRAM), Data Loggers (MRAM)
Automotive Systems: ADAS (LPDDR5), Infotainment (eMMC)
Enterprise Storage: SSD Controllers (3D NAND), Servers (RDIMM)

6. Leading Manufacturers and Products

Manufacturer	Representative Products
Samsung Electronics	V-NAND (9x-layer), LPDDR5X
SK hynix	HBM3 (8GB/s bandwidth), GDDR6
Microchip Technology	Serial NOR Flash (SST26)
Kioxia Corporation	BiCS FLASH (3D NAND)
Infineon Technologies	MRAM (40nm process)

7. Selection Recommendations

Key considerations:

Match memory type to application requirements (e.g., NOR Flash for code storage)
Evaluate bandwidth vs. latency tradeoffs
Analyze temperature and vibration specifications
Assess long-term supply stability
Optimize cost-per-bit metrics

Case Study: A smartphone manufacturer selected UFS 3.1 (NAND-based) for 2100MB/s read speeds, improving app launch times by 35%.

8. Industry Trends

Future directions include:

3D NAND scaling beyond 200 layers
Emerging memories (ReRAM, PCM) for AI acceleration
Package-on-Package (PoP) integration
AI-optimized memory architectures (Processing-in-Memory)
Green manufacturing processes (EUV lithography)