Memory

Part Number	Description / PDF	Quantity
71V016SA12PHI	IC SRAM 1MBIT PARALLEL 44TSOP II	0
SST25PF040CT-40E/MF Roving Networks / Microchip Technology	IC FLASH 4MBIT SPI 40MHZ 8WDFN	0
IS61NLP25636A-200TQLI ISSI (Integrated Silicon Solution, Inc.)	IC SRAM 9MBIT PARALLEL 100TQFP	375
M25P32-VMW6G Flip Electronics	IC FLASH 32MBIT SPI 75MHZ 8SO	971
CY7C1350G-200AXCT Cypress Semiconductor	IC SRAM 4.5MBIT PARALLEL 100TQFP	0
IS61WV51216EDBLL-10TLI-TR ISSI (Integrated Silicon Solution, Inc.)	IC SRAM 8MBIT PARALLEL 44TSOP II	0
CY7C027V-25AXC Flip Electronics	IC SRAM 512KBIT PARALLEL 100TQFP	0
71V67703S75PFGI8 Renesas Electronics America	IC SRAM 9MBIT PARALLEL 100TQFP	0
CY14B104NA-ZSP25XIT Cypress Semiconductor	IC NVSRAM 4MBIT PAR 54TSOP II	0
MT53D512M16D1DS-046 WT:D Micron Technology	IC DRAM 8GBIT 2.133GHZ 200WFBGA	0
AT24C04D-STUM-T Roving Networks / Microchip Technology	IC EEPROM 4KBIT I2C 1MHZ SOT23-5	1911
IS45S32200L-7BLA1-TR ISSI (Integrated Silicon Solution, Inc.)	IC DRAM 64MBIT PARALLEL 90TFBGA	0
CY7C1357C-133AXC Cypress Semiconductor	NO WARRANTY	5
RM24C64C-LMAI-T Adesto Technologies	IC CBRAM 64KBIT I2C 1MHZ 8UDFN	0
CY62256LL-70SNXC IR (Infineon Technologies)	IC SRAM 256KBIT PARALLEL 28SOIC	791
SST25VF010A-33-4I-SAE Roving Networks / Microchip Technology	IC FLASH 1MBIT SPI 33MHZ 8SOIC	25
IS61QDPB41M36A-400M3L ISSI (Integrated Silicon Solution, Inc.)	IC SRAM 36MBIT PARALLEL 165LFBGA	0
CY7C109BN-20ZXC IR (Infineon Technologies)	IC SRAM 1MBIT PARALLEL 32TSOP I	0
NM24C04UEN	IC EEPROM 4KBIT I2C 100KHZ 8DIP	0
CAT25040HU4E-GT3	IC EEPROM 4KBIT SPI 10MHZ 8UDFN	36000

Memory

1. Overview

Memory integrated circuits (ICs) are semiconductor devices used for storing digital data in electronic systems. As fundamental components of modern electronics, they enable data retention and retrieval in computers, mobile devices, industrial equipment, and automotive systems. Memory ICs are categorized into volatile (requires power to retain data) and non-volatile (retains data without power) types, playing critical roles in system performance, storage capacity, and energy efficiency.

2. Major Types and Functional Classification

Type	Functional Characteristics	Application Examples
DRAM (Dynamic RAM)	High-density, low-cost, requires periodic refresh	PCs, Servers, Graphics Cards
NAND Flash	Non-volatile, high endurance, block-level access	SSDs, USB Drives, Mobile Storage
SRAM (Static RAM)	High-speed, low density, no refresh required	Cache Memory, Networking Equipment
NOR Flash	Random access, execute-in-place capability	Embedded Systems, Automotive ECUs
MRAM (Magnetoresistive RAM)	Non-volatile, unlimited endurance, low power	IoT Devices, Industrial Sensors

3. Structure and Composition

Memory ICs typically consist of:

Storage Cell Array: Matrix of memory cells (transistors/capacitors for DRAM, floating-gate transistors for Flash)
Address Decoder: Selects specific memory locations
I/O Circuits: Data input/output interfaces
Control Logic: Manages read/write operations and timing
Power Management Units: Optimizes energy consumption

Advanced packages include BGA (Ball Grid Array) and 3D-stacked configurations for density optimization.

4. Key Technical Specifications

Parameter	Description	Importance
Storage Capacity	Data volume (Gb/GiB)	Determines system memory limits
Access Time	ns/predictable latency	Impacts processing speed
Power Consumption	mW/MHz	Affects battery life and thermal design
Endurance	P/E cycles (Flash)	Dictates product lifespan
Data Retention	Years (non-volatile)	Critical for long-term storage

5. Application Areas

Consumer Electronics: Smartphones (NAND Flash), Gaming Consoles (GDDR6)
Industrial Automation: PLCs (SRAM), Data Loggers (MRAM)
Automotive Systems: ADAS (LPDDR5), Infotainment (eMMC)
Enterprise Storage: SSD Controllers (3D NAND), Servers (RDIMM)

6. Leading Manufacturers and Products

Manufacturer	Representative Products
Samsung Electronics	V-NAND (9x-layer), LPDDR5X
SK hynix	HBM3 (8GB/s bandwidth), GDDR6
Microchip Technology	Serial NOR Flash (SST26)
Kioxia Corporation	BiCS FLASH (3D NAND)
Infineon Technologies	MRAM (40nm process)

7. Selection Recommendations

Key considerations:

Match memory type to application requirements (e.g., NOR Flash for code storage)
Evaluate bandwidth vs. latency tradeoffs
Analyze temperature and vibration specifications
Assess long-term supply stability
Optimize cost-per-bit metrics

Case Study: A smartphone manufacturer selected UFS 3.1 (NAND-based) for 2100MB/s read speeds, improving app launch times by 35%.

8. Industry Trends

Future directions include:

3D NAND scaling beyond 200 layers
Emerging memories (ReRAM, PCM) for AI acceleration
Package-on-Package (PoP) integration
AI-optimized memory architectures (Processing-in-Memory)
Green manufacturing processes (EUV lithography)