Memory

Part Number	Description / PDF	Quantity
CY7C1312KV18-250BZXC Cypress Semiconductor	IC SRAM 18MBIT PARALLEL 165FBGA	124
AS6C1008-55STIN Alliance Memory, Inc.	IC SRAM 1MBIT PARALLEL 32STSOP	224
24LC128-I/SM Roving Networks / Microchip Technology	IC EEPROM 128KBIT I2C 8SOIJ	312
IS45S16160G-7CTLA1 ISSI (Integrated Silicon Solution, Inc.)	IC DRAM 256MBIT PAR 54TSOP II	0
SST26VF064B-104I/SO Roving Networks / Microchip Technology	IC FLASH 64MBIT SPI/QUAD 16SOIC	230
7132LA25JGI Renesas Electronics America	IC SRAM 16KBIT PARALLEL 52PLCC	94
AS4C256M16D3B-12BCN Alliance Memory, Inc.	IC DRAM 4GBIT PARALLEL 96FBGA	0
MR0A08BMA35 Everspin Technologies, Inc.	IC RAM 1MBIT PARALLEL 48FBGA	0
IS45S32800J-7TLA1-TR ISSI (Integrated Silicon Solution, Inc.)	IC DRAM 256MBIT PAR 86TSOP II	0
R1LV0108ESF-7SR#B0 Renesas Electronics America	IC SRAM 1MBIT PARALLEL 32TSOP	694
S29GL512S11TFB010 IR (Infineon Technologies)	IC FLASH 512MBIT PARALLEL 56TSOP	90
CY7C1520KV18-333BZC IR (Infineon Technologies)	IC SRAM 72MBIT PARALLEL 165FBGA	574
71V3557S85BG Renesas Electronics America	IC SRAM 4.5MBIT PARALLEL 119PBGA	817
DS1230AB-70IND Analog Devices, Inc.	IC NVSRAM 256KBIT PAR 28EDIP	0
25LC160A-E/SN Roving Networks / Microchip Technology	IC EEPROM 16KBIT SPI 10MHZ 8SOIC	0
MX25L51245GMI-10G Macronix	IC FLASH 512MBIT SPI/QUAD 16SOP	0
93AA66CT-I/MNY Roving Networks / Microchip Technology	IC EEPROM 4KBIT SPI 3MHZ 8TDFN	0
S25FL128LDPMFI000 Cypress Semiconductor	IC FLASH 128MBIT SPI/QUAD 16SOIC	0
R1LV5256ESP-7SR#S0 Renesas Electronics America	IC SRAM 256KBIT PARALLEL 28SOP	1000
IS45S32200L-7TLA1 ISSI (Integrated Silicon Solution, Inc.)	IC DRAM 64MBIT PAR 86TSOP II	0

Memory

1. Overview

Memory integrated circuits (ICs) are semiconductor devices used for storing digital data in electronic systems. As fundamental components of modern electronics, they enable data retention and retrieval in computers, mobile devices, industrial equipment, and automotive systems. Memory ICs are categorized into volatile (requires power to retain data) and non-volatile (retains data without power) types, playing critical roles in system performance, storage capacity, and energy efficiency.

2. Major Types and Functional Classification

Type	Functional Characteristics	Application Examples
DRAM (Dynamic RAM)	High-density, low-cost, requires periodic refresh	PCs, Servers, Graphics Cards
NAND Flash	Non-volatile, high endurance, block-level access	SSDs, USB Drives, Mobile Storage
SRAM (Static RAM)	High-speed, low density, no refresh required	Cache Memory, Networking Equipment
NOR Flash	Random access, execute-in-place capability	Embedded Systems, Automotive ECUs
MRAM (Magnetoresistive RAM)	Non-volatile, unlimited endurance, low power	IoT Devices, Industrial Sensors

3. Structure and Composition

Memory ICs typically consist of:

Storage Cell Array: Matrix of memory cells (transistors/capacitors for DRAM, floating-gate transistors for Flash)
Address Decoder: Selects specific memory locations
I/O Circuits: Data input/output interfaces
Control Logic: Manages read/write operations and timing
Power Management Units: Optimizes energy consumption

Advanced packages include BGA (Ball Grid Array) and 3D-stacked configurations for density optimization.

4. Key Technical Specifications

Parameter	Description	Importance
Storage Capacity	Data volume (Gb/GiB)	Determines system memory limits
Access Time	ns/predictable latency	Impacts processing speed
Power Consumption	mW/MHz	Affects battery life and thermal design
Endurance	P/E cycles (Flash)	Dictates product lifespan
Data Retention	Years (non-volatile)	Critical for long-term storage

5. Application Areas

Consumer Electronics: Smartphones (NAND Flash), Gaming Consoles (GDDR6)
Industrial Automation: PLCs (SRAM), Data Loggers (MRAM)
Automotive Systems: ADAS (LPDDR5), Infotainment (eMMC)
Enterprise Storage: SSD Controllers (3D NAND), Servers (RDIMM)

6. Leading Manufacturers and Products

Manufacturer	Representative Products
Samsung Electronics	V-NAND (9x-layer), LPDDR5X
SK hynix	HBM3 (8GB/s bandwidth), GDDR6
Microchip Technology	Serial NOR Flash (SST26)
Kioxia Corporation	BiCS FLASH (3D NAND)
Infineon Technologies	MRAM (40nm process)

7. Selection Recommendations

Key considerations:

Match memory type to application requirements (e.g., NOR Flash for code storage)
Evaluate bandwidth vs. latency tradeoffs
Analyze temperature and vibration specifications
Assess long-term supply stability
Optimize cost-per-bit metrics

Case Study: A smartphone manufacturer selected UFS 3.1 (NAND-based) for 2100MB/s read speeds, improving app launch times by 35%.

8. Industry Trends

Future directions include:

3D NAND scaling beyond 200 layers
Emerging memories (ReRAM, PCM) for AI acceleration
Package-on-Package (PoP) integration
AI-optimized memory architectures (Processing-in-Memory)
Green manufacturing processes (EUV lithography)