Memory

Part Number	Description / PDF	Quantity
AS7C31025C-12JINTR Alliance Memory, Inc.	IC SRAM 1MBIT PARALLEL 32SOJ	0
SST39VF400A-70-4C-B3KE-T Roving Networks / Microchip Technology	IC FLASH 4MBIT PARALLEL 48TFBGA	0
M95080-WMN6P STMicroelectronics	IC EEPROM 8KBIT SPI 20MHZ 8SO	5239
S25FS256SDSBHV200 Cypress Semiconductor	IC FLASH 256MBIT SPI/QUAD 24BGA	0
CY7C1474BV25-167BGC IR (Infineon Technologies)	IC SRAM 72MBIT PARALLEL 209FBGA	103
CY7C1315JV18-300BZXC IR (Infineon Technologies)	IC SRAM 18MBIT PARALLEL 165FBGA	588
N25Q064A13ESF40E Flip Electronics	IC FLSH 64MBIT SPI 108MHZ 16SO W	1025
AS4C16M16D1A-5TIN Alliance Memory, Inc.	IC DRAM 256MBIT PAR 66TSOP II	0
MT29F2T08EMHAFJ4-3T:A Micron Technology	IC FLASH 2TB PARALLEL 132VBGA	0
25AA640-I/P Roving Networks / Microchip Technology	IC EEPROM 64KBIT SPI 1MHZ 8DIP	592
23A256T-I/ST Roving Networks / Microchip Technology	IC SRAM 256KBIT SPI 20MHZ 8TSSOP	0
RM24C128C-LSNI-T Adesto Technologies	IC CBRAM 128KBIT I2C 1MHZ 8SOIC	0
AS7C31025B-10TJCNTR Alliance Memory, Inc.	IC SRAM 1MBIT PARALLEL 32SOJ	0
CY7C1041CV33-12ZXC IR (Infineon Technologies)	IC SRAM 4MBIT PARALLEL 44TSOP II	5286
AT34C02C-TH-T Atmel (Microchip Technology)	IC EEPROM 2KBIT I2C 8TSSOP	2232838
M93C56-WMN6P STMicroelectronics	IC EEPROM 2KBIT SPI 2MHZ 8SO	3583
24C02C/P Roving Networks / Microchip Technology	IC EEPROM 2KBIT I2C 400KHZ 8DIP	1238
71V424YL10PH	IC SRAM 4MBIT PARALLEL 44TSOP II	199
71V65703S75PFG Renesas Electronics America	IC SRAM 9MBIT PARALLEL 100TQFP	0
SST39WF800B-70-4I-B3KE-T Roving Networks / Microchip Technology	IC FLASH 8MBIT PARALLEL 48TFBGA	0

Memory

1. Overview

Memory integrated circuits (ICs) are semiconductor devices used for storing digital data in electronic systems. As fundamental components of modern electronics, they enable data retention and retrieval in computers, mobile devices, industrial equipment, and automotive systems. Memory ICs are categorized into volatile (requires power to retain data) and non-volatile (retains data without power) types, playing critical roles in system performance, storage capacity, and energy efficiency.

2. Major Types and Functional Classification

Type	Functional Characteristics	Application Examples
DRAM (Dynamic RAM)	High-density, low-cost, requires periodic refresh	PCs, Servers, Graphics Cards
NAND Flash	Non-volatile, high endurance, block-level access	SSDs, USB Drives, Mobile Storage
SRAM (Static RAM)	High-speed, low density, no refresh required	Cache Memory, Networking Equipment
NOR Flash	Random access, execute-in-place capability	Embedded Systems, Automotive ECUs
MRAM (Magnetoresistive RAM)	Non-volatile, unlimited endurance, low power	IoT Devices, Industrial Sensors

3. Structure and Composition

Memory ICs typically consist of:

Storage Cell Array: Matrix of memory cells (transistors/capacitors for DRAM, floating-gate transistors for Flash)
Address Decoder: Selects specific memory locations
I/O Circuits: Data input/output interfaces
Control Logic: Manages read/write operations and timing
Power Management Units: Optimizes energy consumption

Advanced packages include BGA (Ball Grid Array) and 3D-stacked configurations for density optimization.

4. Key Technical Specifications

Parameter	Description	Importance
Storage Capacity	Data volume (Gb/GiB)	Determines system memory limits
Access Time	ns/predictable latency	Impacts processing speed
Power Consumption	mW/MHz	Affects battery life and thermal design
Endurance	P/E cycles (Flash)	Dictates product lifespan
Data Retention	Years (non-volatile)	Critical for long-term storage

5. Application Areas

Consumer Electronics: Smartphones (NAND Flash), Gaming Consoles (GDDR6)
Industrial Automation: PLCs (SRAM), Data Loggers (MRAM)
Automotive Systems: ADAS (LPDDR5), Infotainment (eMMC)
Enterprise Storage: SSD Controllers (3D NAND), Servers (RDIMM)

6. Leading Manufacturers and Products

Manufacturer	Representative Products
Samsung Electronics	V-NAND (9x-layer), LPDDR5X
SK hynix	HBM3 (8GB/s bandwidth), GDDR6
Microchip Technology	Serial NOR Flash (SST26)
Kioxia Corporation	BiCS FLASH (3D NAND)
Infineon Technologies	MRAM (40nm process)

7. Selection Recommendations

Key considerations:

Match memory type to application requirements (e.g., NOR Flash for code storage)
Evaluate bandwidth vs. latency tradeoffs
Analyze temperature and vibration specifications
Assess long-term supply stability
Optimize cost-per-bit metrics

Case Study: A smartphone manufacturer selected UFS 3.1 (NAND-based) for 2100MB/s read speeds, improving app launch times by 35%.

8. Industry Trends

Future directions include:

3D NAND scaling beyond 200 layers
Emerging memories (ReRAM, PCM) for AI acceleration
Package-on-Package (PoP) integration
AI-optimized memory architectures (Processing-in-Memory)
Green manufacturing processes (EUV lithography)