Memory

Part Number	Description / PDF	Quantity
71V67903S85PFG8 Renesas Electronics America	IC SRAM 9MBIT PARALLEL 100TQFP	0
CY7C1414KV18-250BZXCT Cypress Semiconductor	IC SRAM 36MBIT PARALLEL 165FBGA	0
CY7C1263KV18-400BZC IR (Infineon Technologies)	IC SRAM 36MBIT PARALLEL 165FBGA	223
CY62138CV33LL-70BAI Rochester Electronics	STANDARD SRAM, 256KX8, 70NS	344
MTFC8GLGDM-AIT Z Micron Technology	IC FLASH 64GBIT MMC 153TFBGA	0
S25FL128SAGBHBA00 Cypress Semiconductor	IC FLASH 128MBIT SPI/QUAD 24BGA	0
MT58V512V36FF-8.5 Micron Technology	CACHE SRAM, 512KX36, 8.5NS, CMOS	76
IS42S16160G-6TLI-TR ISSI (Integrated Silicon Solution, Inc.)	IC DRAM 256MBIT PAR 54TSOP II	0
25LC512T-I/SN Roving Networks / Microchip Technology	IC EEPROM 512KBIT SPI 8SOIC	249
71024S15TYG8 Renesas Electronics America	IC SRAM 1MBIT PARALLEL 32SOJ	0
IS43R83200D-5TL ISSI (Integrated Silicon Solution, Inc.)	IC DRAM 256MBIT PAR 66TSOP II	0
CY15B128Q-SXAT Cypress Semiconductor	IC FRAM 128KBIT SPI 40MHZ 8SOIC	0
IS61QDPB44M18A-400M3L ISSI (Integrated Silicon Solution, Inc.)	IC SRAM 72MBIT PARALLEL 165LFBGA	0
UPD46185092BF1-E40-EQ1-A Renesas Electronics America	QDR SRAM, 2MX9, 0.45NS	239
AT27C040-90JU-T Roving Networks / Microchip Technology	IC EPROM 4MBIT PARALLEL 32PLCC	875
MX66L1G45GXDJ-10G Macronix	IC FLASH 1GBIT SPI/QUAD 24BGA	0
GS8342DT20BGD-500I GSI Technology	IC SRAM 36MBIT PARALLEL 165FPBGA	0
IS43R16320E-5BLI-TR ISSI (Integrated Silicon Solution, Inc.)	IC DRAM 512MBIT PARALLEL 60TFBGA	0
AT25SF081-XMHD-T Adesto Technologies	IC FLASH 8MBIT SPI 104MHZ 8TSSOP	0
70T631S10BF8 Renesas Electronics America	IC SRAM 4.5MBIT PAR 208CABGA	0

Memory

1. Overview

Memory integrated circuits (ICs) are semiconductor devices used for storing digital data in electronic systems. As fundamental components of modern electronics, they enable data retention and retrieval in computers, mobile devices, industrial equipment, and automotive systems. Memory ICs are categorized into volatile (requires power to retain data) and non-volatile (retains data without power) types, playing critical roles in system performance, storage capacity, and energy efficiency.

2. Major Types and Functional Classification

Type	Functional Characteristics	Application Examples
DRAM (Dynamic RAM)	High-density, low-cost, requires periodic refresh	PCs, Servers, Graphics Cards
NAND Flash	Non-volatile, high endurance, block-level access	SSDs, USB Drives, Mobile Storage
SRAM (Static RAM)	High-speed, low density, no refresh required	Cache Memory, Networking Equipment
NOR Flash	Random access, execute-in-place capability	Embedded Systems, Automotive ECUs
MRAM (Magnetoresistive RAM)	Non-volatile, unlimited endurance, low power	IoT Devices, Industrial Sensors

3. Structure and Composition

Memory ICs typically consist of:

Storage Cell Array: Matrix of memory cells (transistors/capacitors for DRAM, floating-gate transistors for Flash)
Address Decoder: Selects specific memory locations
I/O Circuits: Data input/output interfaces
Control Logic: Manages read/write operations and timing
Power Management Units: Optimizes energy consumption

Advanced packages include BGA (Ball Grid Array) and 3D-stacked configurations for density optimization.

4. Key Technical Specifications

Parameter	Description	Importance
Storage Capacity	Data volume (Gb/GiB)	Determines system memory limits
Access Time	ns/predictable latency	Impacts processing speed
Power Consumption	mW/MHz	Affects battery life and thermal design
Endurance	P/E cycles (Flash)	Dictates product lifespan
Data Retention	Years (non-volatile)	Critical for long-term storage

5. Application Areas

Consumer Electronics: Smartphones (NAND Flash), Gaming Consoles (GDDR6)
Industrial Automation: PLCs (SRAM), Data Loggers (MRAM)
Automotive Systems: ADAS (LPDDR5), Infotainment (eMMC)
Enterprise Storage: SSD Controllers (3D NAND), Servers (RDIMM)

6. Leading Manufacturers and Products

Manufacturer	Representative Products
Samsung Electronics	V-NAND (9x-layer), LPDDR5X
SK hynix	HBM3 (8GB/s bandwidth), GDDR6
Microchip Technology	Serial NOR Flash (SST26)
Kioxia Corporation	BiCS FLASH (3D NAND)
Infineon Technologies	MRAM (40nm process)

7. Selection Recommendations

Key considerations:

Match memory type to application requirements (e.g., NOR Flash for code storage)
Evaluate bandwidth vs. latency tradeoffs
Analyze temperature and vibration specifications
Assess long-term supply stability
Optimize cost-per-bit metrics

Case Study: A smartphone manufacturer selected UFS 3.1 (NAND-based) for 2100MB/s read speeds, improving app launch times by 35%.

8. Industry Trends

Future directions include:

3D NAND scaling beyond 200 layers
Emerging memories (ReRAM, PCM) for AI acceleration
Package-on-Package (PoP) integration
AI-optimized memory architectures (Processing-in-Memory)
Green manufacturing processes (EUV lithography)