Memory

Part Number	Description / PDF	Quantity
GD25Q32CTJG GigaDevice	IC FLASH 32MBIT SPI/QUAD 8SOP	0
71V3559S75BQ8 Renesas Electronics America	IC SRAM 4.5MBIT PAR 165CABGA	0
MR2A16ACMA35R Everspin Technologies, Inc.	IC RAM 4MBIT PARALLEL 48FBGA	0
70T3519S166BF Renesas Electronics America	IC SRAM 9MBIT PARALLEL 208CABGA	0
CY14B064I-SFXIT Cypress Semiconductor	IC NVSRAM 64KBIT I2C 16SOIC	0
SST49LF008A-33-4C-NHE-T Roving Networks / Microchip Technology	IC FLASH 8MBIT PARALLEL 32PLCC	0
IS25WP128-JLLE-TR ISSI (Integrated Silicon Solution, Inc.)	IC FLASH 128MBIT SPI/QUAD 8WSON	0
CY7C1387BV25-150AC Rochester Electronics	CACHE SRAM, 1MX18, 3.8NS	77
AS4C16M16SA-6TINTR Alliance Memory, Inc.	IC DRAM 256MBIT PAR 54TSOP II	0
70121L25JG8 Renesas Electronics America	IC SRAM 18KBIT PARALLEL 52PLCC	0
AT93C66B-XHM-T Roving Networks / Microchip Technology	IC EEPROM 4KBIT SPI 2MHZ 8TSSOP	0
CY7C194-45VC Rochester Electronics	STANDARD SRAM, 64KX4, 45NS, CMOS	14511
CY15V104QN-50SXI Cypress Semiconductor	IC FRAM 4MBIT SPI 50MHZ 8SOIC	0
CAT25020LI-G	IC EEPROM 2KBIT SPI 20MHZ 8DIP	42831
AT28C010E-15TU Roving Networks / Microchip Technology	IC EEPROM 1MBIT PARALLEL 32TSOP	0
S25FS064SAGNFI030 Cypress Semiconductor	IC FLASH 64MBIT SPI/QUAD 8LGA	0
S29GL256S11FHIV10 Cypress Semiconductor	IC FLASH 256MBIT PARALLEL 64FBGA	0
6116SA25SOGI8 Renesas Electronics America	IC SRAM 16KBIT PARALLEL 24SOIC	0
FT24C02A-KTR-T Fremont Micro Devices	IC EEPROM 2KBIT I2C 1MHZ 8TSSOP	0
R1EX24064ASAS0A#S0 Renesas Electronics America	IC EEPROM 64KBIT I2C 400KHZ 8SOP	362500

Memory

1. Overview

Memory integrated circuits (ICs) are semiconductor devices used for storing digital data in electronic systems. As fundamental components of modern electronics, they enable data retention and retrieval in computers, mobile devices, industrial equipment, and automotive systems. Memory ICs are categorized into volatile (requires power to retain data) and non-volatile (retains data without power) types, playing critical roles in system performance, storage capacity, and energy efficiency.

2. Major Types and Functional Classification

Type	Functional Characteristics	Application Examples
DRAM (Dynamic RAM)	High-density, low-cost, requires periodic refresh	PCs, Servers, Graphics Cards
NAND Flash	Non-volatile, high endurance, block-level access	SSDs, USB Drives, Mobile Storage
SRAM (Static RAM)	High-speed, low density, no refresh required	Cache Memory, Networking Equipment
NOR Flash	Random access, execute-in-place capability	Embedded Systems, Automotive ECUs
MRAM (Magnetoresistive RAM)	Non-volatile, unlimited endurance, low power	IoT Devices, Industrial Sensors

3. Structure and Composition

Memory ICs typically consist of:

Storage Cell Array: Matrix of memory cells (transistors/capacitors for DRAM, floating-gate transistors for Flash)
Address Decoder: Selects specific memory locations
I/O Circuits: Data input/output interfaces
Control Logic: Manages read/write operations and timing
Power Management Units: Optimizes energy consumption

Advanced packages include BGA (Ball Grid Array) and 3D-stacked configurations for density optimization.

4. Key Technical Specifications

Parameter	Description	Importance
Storage Capacity	Data volume (Gb/GiB)	Determines system memory limits
Access Time	ns/predictable latency	Impacts processing speed
Power Consumption	mW/MHz	Affects battery life and thermal design
Endurance	P/E cycles (Flash)	Dictates product lifespan
Data Retention	Years (non-volatile)	Critical for long-term storage

5. Application Areas

Consumer Electronics: Smartphones (NAND Flash), Gaming Consoles (GDDR6)
Industrial Automation: PLCs (SRAM), Data Loggers (MRAM)
Automotive Systems: ADAS (LPDDR5), Infotainment (eMMC)
Enterprise Storage: SSD Controllers (3D NAND), Servers (RDIMM)

6. Leading Manufacturers and Products

Manufacturer	Representative Products
Samsung Electronics	V-NAND (9x-layer), LPDDR5X
SK hynix	HBM3 (8GB/s bandwidth), GDDR6
Microchip Technology	Serial NOR Flash (SST26)
Kioxia Corporation	BiCS FLASH (3D NAND)
Infineon Technologies	MRAM (40nm process)

7. Selection Recommendations

Key considerations:

Match memory type to application requirements (e.g., NOR Flash for code storage)
Evaluate bandwidth vs. latency tradeoffs
Analyze temperature and vibration specifications
Assess long-term supply stability
Optimize cost-per-bit metrics

Case Study: A smartphone manufacturer selected UFS 3.1 (NAND-based) for 2100MB/s read speeds, improving app launch times by 35%.

8. Industry Trends

Future directions include:

3D NAND scaling beyond 200 layers
Emerging memories (ReRAM, PCM) for AI acceleration
Package-on-Package (PoP) integration
AI-optimized memory architectures (Processing-in-Memory)
Green manufacturing processes (EUV lithography)