Memory

Part Number	Description / PDF	Quantity
71256SA12TPG Renesas Electronics America	IC SRAM 256KBIT PARALLEL 28DIP	271
CY7C0832AV-133BBC Rochester Electronics	DUAL-PORT SRAM, 256KX18, 4NS	76
S29GL512S10DHI020 Cypress Semiconductor	IC FLASH 512MBIT PARALLEL 64FBGA	0
MX29GL128FDT2I-11G Macronix	IC FLASH 128MBIT PARALLEL 56TSOP	0
AS6C8016-55ZIN Alliance Memory, Inc.	IC SRAM 8MBIT PARALLEL 44TSOP II	1675
25LC320A-E/P Roving Networks / Microchip Technology	IC EEPROM 32KBIT SPI 10MHZ 8DIP	0
24LC128T-E/SM Roving Networks / Microchip Technology	IC EEPROM 128KBIT I2C 8SOIJ	0
M5M5256DVP-70GI#BE Renesas Electronics America	STANDARD SRAM, 32KX8	723
SST26VF032BT-104I/SM Roving Networks / Microchip Technology	IC FLASH 32MBIT SPI/QUAD 8SOIJ	0
71T75602S166PFG8 Renesas Electronics America	IC SRAM 18MBIT PARALLEL 100TQFP	0
CY7C1049DV33-10ZSXIT Flip Electronics	IC SRAM 4MBIT PARALLEL 44TSOP II	4000
IS42S32160F-75ETL ISSI (Integrated Silicon Solution, Inc.)	IC DRAM 512MBIT PAR 86TSOP II	0
S-93C86BD4I-J8T1G ABLIC U.S.A. Inc.	IC EEPROM 16KBIT SPI 2MHZ 8SOP	0
S29GL512T11DHB010 Cypress Semiconductor	IC FLASH 512MBIT PARALLEL 64FBGA	0
AT27C020-90JU-T Roving Networks / Microchip Technology	IC EPROM 2MBIT PARALLEL 32PLCC	167
24LC02BHT-I/SN Roving Networks / Microchip Technology	IC EEPROM 2KBIT I2C 400KHZ 8SOIC	0
CY7C1061G18-15ZSXI Cypress Semiconductor	IC SRAM 16MBIT PAR 54TSOP II	104
MX25L1606EZUI-12G Macronix	IC FLASH 16MBIT SPI 86MHZ 8USON	0
25C040X-I/ST Roving Networks / Microchip Technology	IC EEPROM 4KBIT SPI 3MHZ 8TSSOP	0
IS61WV25632BLL-10BLI ISSI (Integrated Silicon Solution, Inc.)	IC SRAM 8MBIT PARALLEL 90TFBGA	0

Memory

1. Overview

Memory integrated circuits (ICs) are semiconductor devices used for storing digital data in electronic systems. As fundamental components of modern electronics, they enable data retention and retrieval in computers, mobile devices, industrial equipment, and automotive systems. Memory ICs are categorized into volatile (requires power to retain data) and non-volatile (retains data without power) types, playing critical roles in system performance, storage capacity, and energy efficiency.

2. Major Types and Functional Classification

Type	Functional Characteristics	Application Examples
DRAM (Dynamic RAM)	High-density, low-cost, requires periodic refresh	PCs, Servers, Graphics Cards
NAND Flash	Non-volatile, high endurance, block-level access	SSDs, USB Drives, Mobile Storage
SRAM (Static RAM)	High-speed, low density, no refresh required	Cache Memory, Networking Equipment
NOR Flash	Random access, execute-in-place capability	Embedded Systems, Automotive ECUs
MRAM (Magnetoresistive RAM)	Non-volatile, unlimited endurance, low power	IoT Devices, Industrial Sensors

3. Structure and Composition

Memory ICs typically consist of:

Storage Cell Array: Matrix of memory cells (transistors/capacitors for DRAM, floating-gate transistors for Flash)
Address Decoder: Selects specific memory locations
I/O Circuits: Data input/output interfaces
Control Logic: Manages read/write operations and timing
Power Management Units: Optimizes energy consumption

Advanced packages include BGA (Ball Grid Array) and 3D-stacked configurations for density optimization.

4. Key Technical Specifications

Parameter	Description	Importance
Storage Capacity	Data volume (Gb/GiB)	Determines system memory limits
Access Time	ns/predictable latency	Impacts processing speed
Power Consumption	mW/MHz	Affects battery life and thermal design
Endurance	P/E cycles (Flash)	Dictates product lifespan
Data Retention	Years (non-volatile)	Critical for long-term storage

5. Application Areas

Consumer Electronics: Smartphones (NAND Flash), Gaming Consoles (GDDR6)
Industrial Automation: PLCs (SRAM), Data Loggers (MRAM)
Automotive Systems: ADAS (LPDDR5), Infotainment (eMMC)
Enterprise Storage: SSD Controllers (3D NAND), Servers (RDIMM)

6. Leading Manufacturers and Products

Manufacturer	Representative Products
Samsung Electronics	V-NAND (9x-layer), LPDDR5X
SK hynix	HBM3 (8GB/s bandwidth), GDDR6
Microchip Technology	Serial NOR Flash (SST26)
Kioxia Corporation	BiCS FLASH (3D NAND)
Infineon Technologies	MRAM (40nm process)

7. Selection Recommendations

Key considerations:

Match memory type to application requirements (e.g., NOR Flash for code storage)
Evaluate bandwidth vs. latency tradeoffs
Analyze temperature and vibration specifications
Assess long-term supply stability
Optimize cost-per-bit metrics

Case Study: A smartphone manufacturer selected UFS 3.1 (NAND-based) for 2100MB/s read speeds, improving app launch times by 35%.

8. Industry Trends

Future directions include:

3D NAND scaling beyond 200 layers
Emerging memories (ReRAM, PCM) for AI acceleration
Package-on-Package (PoP) integration
AI-optimized memory architectures (Processing-in-Memory)
Green manufacturing processes (EUV lithography)