Memory

Part Number	Description / PDF	Quantity
24C01CT-I/OT Roving Networks / Microchip Technology	IC EEPROM 1KBIT I2C SOT23-6	1322
AT25DL081-SSHN-B Adesto Technologies	IC FLASH 8MBIT SPI 100MHZ 8SOIC	615
71V65603S100PFI	IC SRAM 9MBIT PARALLEL 100TQFP	1612
24AA1025-I/SM Roving Networks / Microchip Technology	IC EEPROM 1MBIT I2C 400KHZ 8SOIJ	316
S25FL256SAGMFVR00 Cypress Semiconductor	NO WARRANTY	2
71V3577S75BQG Renesas Electronics America	IC SRAM 4.5MBIT PAR 165CABGA	259
71V3558S166PFGI Renesas Electronics America	IC SRAM 4.5MBIT PARALLEL 100TQFP	0
71V632S6PFGI Renesas Electronics America	IC SRAM 2MBIT PARALLEL 100TQFP	0
S25FL064P0XMFB003 Cypress Semiconductor	IC FLASH 64MBIT SPI/QUAD 16SOIC	0
AT28C010-15TU Roving Networks / Microchip Technology	IC EEPROM 1MBIT PARALLEL 32TSOP	269
71T75802S200PFGI Renesas Electronics America	IC SRAM 18MBIT PARALLEL 100TQFP	10
CY7C024BV-15AXI IR (Infineon Technologies)	IC SRAM 64KBIT PARALLEL 100TQFP	67
BR24G32FVT-3GE2 ROHM Semiconductor	IC EEPROM 32KBIT I2C 8TSSOP	3000
IS25LP128F-JBLE-TR ISSI (Integrated Silicon Solution, Inc.)	IC FLASH 128MBIT SPI/QUAD 8SOIC	0
MT29F32G08CBADBWP-12IT:D Micron Technology	IC FLASH 32GBIT PAR 48TSOP I	0
IS25WP064A-JLLE-TR ISSI (Integrated Silicon Solution, Inc.)	IC FLASH 64MBIT SPI/QUAD 8WSON	0
CY7C1061GE18-15BVJXI Cypress Semiconductor	IC SRAM 16MBIT PARALLEL 48VFBGA	0
S29AL008J70BAI020 Cypress Semiconductor	IC FLASH 8MBIT PARALLEL 48FBGA	0
71V65803S100BGI8 Renesas Electronics America	IC SRAM 9MBIT PARALLEL 119PBGA	0
CY7C1061G-10BVJXIT Cypress Semiconductor	IC SRAM 16MBIT PARALLEL 48VFBGA	0

Memory

1. Overview

Memory integrated circuits (ICs) are semiconductor devices used for storing digital data in electronic systems. As fundamental components of modern electronics, they enable data retention and retrieval in computers, mobile devices, industrial equipment, and automotive systems. Memory ICs are categorized into volatile (requires power to retain data) and non-volatile (retains data without power) types, playing critical roles in system performance, storage capacity, and energy efficiency.

2. Major Types and Functional Classification

Type	Functional Characteristics	Application Examples
DRAM (Dynamic RAM)	High-density, low-cost, requires periodic refresh	PCs, Servers, Graphics Cards
NAND Flash	Non-volatile, high endurance, block-level access	SSDs, USB Drives, Mobile Storage
SRAM (Static RAM)	High-speed, low density, no refresh required	Cache Memory, Networking Equipment
NOR Flash	Random access, execute-in-place capability	Embedded Systems, Automotive ECUs
MRAM (Magnetoresistive RAM)	Non-volatile, unlimited endurance, low power	IoT Devices, Industrial Sensors

3. Structure and Composition

Memory ICs typically consist of:

Storage Cell Array: Matrix of memory cells (transistors/capacitors for DRAM, floating-gate transistors for Flash)
Address Decoder: Selects specific memory locations
I/O Circuits: Data input/output interfaces
Control Logic: Manages read/write operations and timing
Power Management Units: Optimizes energy consumption

Advanced packages include BGA (Ball Grid Array) and 3D-stacked configurations for density optimization.

4. Key Technical Specifications

Parameter	Description	Importance
Storage Capacity	Data volume (Gb/GiB)	Determines system memory limits
Access Time	ns/predictable latency	Impacts processing speed
Power Consumption	mW/MHz	Affects battery life and thermal design
Endurance	P/E cycles (Flash)	Dictates product lifespan
Data Retention	Years (non-volatile)	Critical for long-term storage

5. Application Areas

Consumer Electronics: Smartphones (NAND Flash), Gaming Consoles (GDDR6)
Industrial Automation: PLCs (SRAM), Data Loggers (MRAM)
Automotive Systems: ADAS (LPDDR5), Infotainment (eMMC)
Enterprise Storage: SSD Controllers (3D NAND), Servers (RDIMM)

6. Leading Manufacturers and Products

Manufacturer	Representative Products
Samsung Electronics	V-NAND (9x-layer), LPDDR5X
SK hynix	HBM3 (8GB/s bandwidth), GDDR6
Microchip Technology	Serial NOR Flash (SST26)
Kioxia Corporation	BiCS FLASH (3D NAND)
Infineon Technologies	MRAM (40nm process)

7. Selection Recommendations

Key considerations:

Match memory type to application requirements (e.g., NOR Flash for code storage)
Evaluate bandwidth vs. latency tradeoffs
Analyze temperature and vibration specifications
Assess long-term supply stability
Optimize cost-per-bit metrics

Case Study: A smartphone manufacturer selected UFS 3.1 (NAND-based) for 2100MB/s read speeds, improving app launch times by 35%.

8. Industry Trends

Future directions include:

3D NAND scaling beyond 200 layers
Emerging memories (ReRAM, PCM) for AI acceleration
Package-on-Package (PoP) integration
AI-optimized memory architectures (Processing-in-Memory)
Green manufacturing processes (EUV lithography)