Memory

Part Number	Description / PDF	Quantity
CY7C1356CV25-200AXC IR (Infineon Technologies)	IC SRAM 9MBIT PARALLEL 100TQFP	358
FT24C16A-ESG-T Fremont Micro Devices	IC EEPROM 16KBIT I2C 1MHZ 8SOP	0
IS61VF51236B-7.5TQLI ISSI (Integrated Silicon Solution, Inc.)	IC SRAM 18MBIT PARALLEL 100LQFP	0
CAT24C04WE-G	IC EEPROM 4KBIT I2C 400KHZ 8SOIC	2900
R1WV3216RBG-7SI#B0 Renesas Electronics America	IC SRAM 32MBIT PARALLEL 48FBGA	0
AN28F010109 Intel	FLASH, 128KX8, 150NS	750
CY62126EV30LL-45ZSXAT Cypress Semiconductor	IC SRAM 1MBIT PARALLEL 44TSOP II	0
CY7C0241-15AXI IR (Infineon Technologies)	IC SRAM 72KBIT PARALLEL 100TQFP	302
AS7C32096A-20TIN Alliance Memory, Inc.	IC SRAM 2MBIT PARALLEL 44TSOP2	0
CY7C1426KV18-250BZXC IR (Infineon Technologies)	QDR SRAM, 4MX9, 0.45NS PBGA165	1138
BR24C01-RDW6TP ROHM Semiconductor	IC EEPROM 1KBIT I2C 8TSSOP	0
25A512-I/ST Roving Networks / Microchip Technology	IC EEPROM 512KBIT SPI 8TSSOP	0
11LC160-E/MS Roving Networks / Microchip Technology	IC EEPROM 16KBIT SGL WIRE 8MSOP	0
FT24C128A-ETR-T Fremont Micro Devices	IC EEPROM 128KBIT I2C 8TSSOP	0
6116SA20SOG Renesas Electronics America	IC SRAM 16KBIT PARALLEL 24SOIC	0
34AA02T-I/OT Roving Networks / Microchip Technology	IC EEPROM 2KBIT I2C SOT23-6	2445
23K640-E/ST Roving Networks / Microchip Technology	IC SRAM 64KBIT SPI 20MHZ 8TSSOP	0
S34ML01G100BHV000 Cypress Semiconductor	IC FLASH 1GBIT PARALLEL 63BGA	983
24C00T/SN Roving Networks / Microchip Technology	IC EEPROM 128B I2C 400KHZ 8SOIC	0
93C86CT-E/SN Roving Networks / Microchip Technology	IC EEPROM 16KBIT SPI 3MHZ 8SOIC	0

Memory

1. Overview

Memory integrated circuits (ICs) are semiconductor devices used for storing digital data in electronic systems. As fundamental components of modern electronics, they enable data retention and retrieval in computers, mobile devices, industrial equipment, and automotive systems. Memory ICs are categorized into volatile (requires power to retain data) and non-volatile (retains data without power) types, playing critical roles in system performance, storage capacity, and energy efficiency.

2. Major Types and Functional Classification

Type	Functional Characteristics	Application Examples
DRAM (Dynamic RAM)	High-density, low-cost, requires periodic refresh	PCs, Servers, Graphics Cards
NAND Flash	Non-volatile, high endurance, block-level access	SSDs, USB Drives, Mobile Storage
SRAM (Static RAM)	High-speed, low density, no refresh required	Cache Memory, Networking Equipment
NOR Flash	Random access, execute-in-place capability	Embedded Systems, Automotive ECUs
MRAM (Magnetoresistive RAM)	Non-volatile, unlimited endurance, low power	IoT Devices, Industrial Sensors

3. Structure and Composition

Memory ICs typically consist of:

Storage Cell Array: Matrix of memory cells (transistors/capacitors for DRAM, floating-gate transistors for Flash)
Address Decoder: Selects specific memory locations
I/O Circuits: Data input/output interfaces
Control Logic: Manages read/write operations and timing
Power Management Units: Optimizes energy consumption

Advanced packages include BGA (Ball Grid Array) and 3D-stacked configurations for density optimization.

4. Key Technical Specifications

Parameter	Description	Importance
Storage Capacity	Data volume (Gb/GiB)	Determines system memory limits
Access Time	ns/predictable latency	Impacts processing speed
Power Consumption	mW/MHz	Affects battery life and thermal design
Endurance	P/E cycles (Flash)	Dictates product lifespan
Data Retention	Years (non-volatile)	Critical for long-term storage

5. Application Areas

Consumer Electronics: Smartphones (NAND Flash), Gaming Consoles (GDDR6)
Industrial Automation: PLCs (SRAM), Data Loggers (MRAM)
Automotive Systems: ADAS (LPDDR5), Infotainment (eMMC)
Enterprise Storage: SSD Controllers (3D NAND), Servers (RDIMM)

6. Leading Manufacturers and Products

Manufacturer	Representative Products
Samsung Electronics	V-NAND (9x-layer), LPDDR5X
SK hynix	HBM3 (8GB/s bandwidth), GDDR6
Microchip Technology	Serial NOR Flash (SST26)
Kioxia Corporation	BiCS FLASH (3D NAND)
Infineon Technologies	MRAM (40nm process)

7. Selection Recommendations

Key considerations:

Match memory type to application requirements (e.g., NOR Flash for code storage)
Evaluate bandwidth vs. latency tradeoffs
Analyze temperature and vibration specifications
Assess long-term supply stability
Optimize cost-per-bit metrics

Case Study: A smartphone manufacturer selected UFS 3.1 (NAND-based) for 2100MB/s read speeds, improving app launch times by 35%.

8. Industry Trends

Future directions include:

3D NAND scaling beyond 200 layers
Emerging memories (ReRAM, PCM) for AI acceleration
Package-on-Package (PoP) integration
AI-optimized memory architectures (Processing-in-Memory)
Green manufacturing processes (EUV lithography)