Memory

Part Number	Description / PDF	Quantity
SST39WF1602-70-4C-B3KE Roving Networks / Microchip Technology	IC FLASH 16MBIT PARALLEL 48TFBGA	0
71V67602S166PF	IC SRAM 9MBIT PARALLEL 100TQFP	0
CY7C1041BNV33L-12ZXC IR (Infineon Technologies)	IC SRAM 4MBIT PARALLEL 44TSOP II	813
93AA86C-I/ST Roving Networks / Microchip Technology	IC EEPROM 16KBIT SPI 3MHZ 8TSSOP	1463
CYD02S36VA-167BBC IR (Infineon Technologies)	DUAL-PORT SRAM, 64KX36, 4.4NS PB	345
M29W320DB7AN6F Flip Electronics	IC FLASH 32MBIT PARALLEL 48TSOP	1500
AT45DB161E-SSHD-B Adesto Technologies	IC FLASH 16MBIT SPI 85MHZ 8SOIC	15
NM27C010N120	IC EPROM 1MBIT PARALLEL 32DIP	961
AT27LV040A-12VI Roving Networks / Microchip Technology	IC EPROM 4MBIT PARALLEL 32VSOP	112
GD25LQ10CTIGR GigaDevice	IC FLASH 1MBIT SPI/QUAD I/O 8SOP	0
S25FS512SAGBHM213 Cypress Semiconductor	IC FLASH 512MBIT SPI/QUAD 24BGA	0
X28C512EM-12 Rochester Electronics	EEPROM, 64KX8, 120NS, PARALLEL,	312
93C46CT-I/SN Roving Networks / Microchip Technology	IC EEPROM 1KBIT SPI 3MHZ 8SOIC	0
93LC66AT-I/MS Roving Networks / Microchip Technology	IC EEPROM 4KBIT SPI 2MHZ 8MSOP	0
CY7C1010DV33-10VXI Cypress Semiconductor	NO WARRANTY	375
S29GL01GT10DHI010 Cypress Semiconductor	IC FLASH 1GBIT PARALLEL 64FBGA	0
NM24C05UN	IC EEPROM 4KBIT I2C 100KHZ 8DIP	4200
IS64LPS12832EC-200TQLA3-TR ISSI (Integrated Silicon Solution, Inc.)	IC SRAM 4MBIT PARALLEL 100LQFP	0
IS63WV1024BLL-12HLI ISSI (Integrated Silicon Solution, Inc.)	IC SRAM 1MBIT PARALLEL 32STSOP I	0
IS62C51216AL-55TLI ISSI (Integrated Silicon Solution, Inc.)	IC SRAM 8MBIT PARALLEL 44TSOP II	0

Memory

1. Overview

Memory integrated circuits (ICs) are semiconductor devices used for storing digital data in electronic systems. As fundamental components of modern electronics, they enable data retention and retrieval in computers, mobile devices, industrial equipment, and automotive systems. Memory ICs are categorized into volatile (requires power to retain data) and non-volatile (retains data without power) types, playing critical roles in system performance, storage capacity, and energy efficiency.

2. Major Types and Functional Classification

Type	Functional Characteristics	Application Examples
DRAM (Dynamic RAM)	High-density, low-cost, requires periodic refresh	PCs, Servers, Graphics Cards
NAND Flash	Non-volatile, high endurance, block-level access	SSDs, USB Drives, Mobile Storage
SRAM (Static RAM)	High-speed, low density, no refresh required	Cache Memory, Networking Equipment
NOR Flash	Random access, execute-in-place capability	Embedded Systems, Automotive ECUs
MRAM (Magnetoresistive RAM)	Non-volatile, unlimited endurance, low power	IoT Devices, Industrial Sensors

3. Structure and Composition

Memory ICs typically consist of:

Storage Cell Array: Matrix of memory cells (transistors/capacitors for DRAM, floating-gate transistors for Flash)
Address Decoder: Selects specific memory locations
I/O Circuits: Data input/output interfaces
Control Logic: Manages read/write operations and timing
Power Management Units: Optimizes energy consumption

Advanced packages include BGA (Ball Grid Array) and 3D-stacked configurations for density optimization.

4. Key Technical Specifications

Parameter	Description	Importance
Storage Capacity	Data volume (Gb/GiB)	Determines system memory limits
Access Time	ns/predictable latency	Impacts processing speed
Power Consumption	mW/MHz	Affects battery life and thermal design
Endurance	P/E cycles (Flash)	Dictates product lifespan
Data Retention	Years (non-volatile)	Critical for long-term storage

5. Application Areas

Consumer Electronics: Smartphones (NAND Flash), Gaming Consoles (GDDR6)
Industrial Automation: PLCs (SRAM), Data Loggers (MRAM)
Automotive Systems: ADAS (LPDDR5), Infotainment (eMMC)
Enterprise Storage: SSD Controllers (3D NAND), Servers (RDIMM)

6. Leading Manufacturers and Products

Manufacturer	Representative Products
Samsung Electronics	V-NAND (9x-layer), LPDDR5X
SK hynix	HBM3 (8GB/s bandwidth), GDDR6
Microchip Technology	Serial NOR Flash (SST26)
Kioxia Corporation	BiCS FLASH (3D NAND)
Infineon Technologies	MRAM (40nm process)

7. Selection Recommendations

Key considerations:

Match memory type to application requirements (e.g., NOR Flash for code storage)
Evaluate bandwidth vs. latency tradeoffs
Analyze temperature and vibration specifications
Assess long-term supply stability
Optimize cost-per-bit metrics

Case Study: A smartphone manufacturer selected UFS 3.1 (NAND-based) for 2100MB/s read speeds, improving app launch times by 35%.

8. Industry Trends

Future directions include:

3D NAND scaling beyond 200 layers
Emerging memories (ReRAM, PCM) for AI acceleration
Package-on-Package (PoP) integration
AI-optimized memory architectures (Processing-in-Memory)
Green manufacturing processes (EUV lithography)