Memory

Part Number	Description / PDF	Quantity
93C66BT-I/MNY Roving Networks / Microchip Technology	IC EEPROM 4KBIT SPI 2MHZ 8TDFN	0
MT55L256V32PT-6 Micron Technology	ZBT SRAM, 256KX32, 3.5NS PQFP100	135
MX66L1G45GXDI-10G Macronix	IC FLASH 1GBIT SPI/QUAD 24BGA	0
AS4C256M16D3C-10BIN Alliance Memory, Inc.	IC DRAM 4GBIT PARALLEL 96FBGA	195
CY62128EV30LL-45ZXAT IR (Infineon Technologies)	STANDARD SRAM, 128KX8, 45NS PDSO	1500
CY7C024AV-25AXC	IC SRAM 64KBIT PARALLEL 100TQFP	0
CY7C1356A-100AC Rochester Electronics	ZBT SRAM, 512KX18, 5NS	3206
MT29F2G08ABBEAH4-ITX:E TR Micron Technology	IC FLASH 2GBIT PARALLEL 63VFBGA	816
CY7C1383B-117AC Rochester Electronics	STANDARD SRAM, 1MX18	58
AT25XV041B-MAHV-T Adesto Technologies	IC FLASH 4MBIT SPI 85MHZ 8UDFN	0
NM93C66ALM8X	EEPROM, 256X16, SERIAL, CMOS	7500
SST39LF401C-55-4C-B3KE-T Roving Networks / Microchip Technology	IC FLASH 4MBIT PARALLEL 48TFBGA	0
24501BVA Intersil (Renesas Electronics America)	STANDARD SRAM, 4KX1, 120NS	141
MX29GL256FUXFI-11G Macronix	IC FLSH 256MBIT PARALLEL 64LFBGA	0
IS43LR16320B-6BLI-TR ISSI (Integrated Silicon Solution, Inc.)	IC DRAM 512MBIT PARALLEL 60TFBGA	0
BR95040-WMN6TP ROHM Semiconductor	IC EEPROM 4KBIT SPI 5MHZ 8SO	0
S29GL256P90FFCR20 IR (Infineon Technologies)	IC FLASH 256MBIT PARALLEL 64FBGA	60
S29GL01GT10TFA013 Cypress Semiconductor	IC FLASH 1GBIT PARALLEL 56TSOP	0
CYD36S72V18-167BGXI Rochester Electronics	IC SRAM 36MBIT PARALLEL 484FBGA	31
CY62256NLL-55ZXET IR (Infineon Technologies)	IC SRAM 256KBIT PAR 28TSOP I	509

Memory

1. Overview

Memory integrated circuits (ICs) are semiconductor devices used for storing digital data in electronic systems. As fundamental components of modern electronics, they enable data retention and retrieval in computers, mobile devices, industrial equipment, and automotive systems. Memory ICs are categorized into volatile (requires power to retain data) and non-volatile (retains data without power) types, playing critical roles in system performance, storage capacity, and energy efficiency.

2. Major Types and Functional Classification

Type	Functional Characteristics	Application Examples
DRAM (Dynamic RAM)	High-density, low-cost, requires periodic refresh	PCs, Servers, Graphics Cards
NAND Flash	Non-volatile, high endurance, block-level access	SSDs, USB Drives, Mobile Storage
SRAM (Static RAM)	High-speed, low density, no refresh required	Cache Memory, Networking Equipment
NOR Flash	Random access, execute-in-place capability	Embedded Systems, Automotive ECUs
MRAM (Magnetoresistive RAM)	Non-volatile, unlimited endurance, low power	IoT Devices, Industrial Sensors

3. Structure and Composition

Memory ICs typically consist of:

Storage Cell Array: Matrix of memory cells (transistors/capacitors for DRAM, floating-gate transistors for Flash)
Address Decoder: Selects specific memory locations
I/O Circuits: Data input/output interfaces
Control Logic: Manages read/write operations and timing
Power Management Units: Optimizes energy consumption

Advanced packages include BGA (Ball Grid Array) and 3D-stacked configurations for density optimization.

4. Key Technical Specifications

Parameter	Description	Importance
Storage Capacity	Data volume (Gb/GiB)	Determines system memory limits
Access Time	ns/predictable latency	Impacts processing speed
Power Consumption	mW/MHz	Affects battery life and thermal design
Endurance	P/E cycles (Flash)	Dictates product lifespan
Data Retention	Years (non-volatile)	Critical for long-term storage

5. Application Areas

Consumer Electronics: Smartphones (NAND Flash), Gaming Consoles (GDDR6)
Industrial Automation: PLCs (SRAM), Data Loggers (MRAM)
Automotive Systems: ADAS (LPDDR5), Infotainment (eMMC)
Enterprise Storage: SSD Controllers (3D NAND), Servers (RDIMM)

6. Leading Manufacturers and Products

Manufacturer	Representative Products
Samsung Electronics	V-NAND (9x-layer), LPDDR5X
SK hynix	HBM3 (8GB/s bandwidth), GDDR6
Microchip Technology	Serial NOR Flash (SST26)
Kioxia Corporation	BiCS FLASH (3D NAND)
Infineon Technologies	MRAM (40nm process)

7. Selection Recommendations

Key considerations:

Match memory type to application requirements (e.g., NOR Flash for code storage)
Evaluate bandwidth vs. latency tradeoffs
Analyze temperature and vibration specifications
Assess long-term supply stability
Optimize cost-per-bit metrics

Case Study: A smartphone manufacturer selected UFS 3.1 (NAND-based) for 2100MB/s read speeds, improving app launch times by 35%.

8. Industry Trends

Future directions include:

3D NAND scaling beyond 200 layers
Emerging memories (ReRAM, PCM) for AI acceleration
Package-on-Package (PoP) integration
AI-optimized memory architectures (Processing-in-Memory)
Green manufacturing processes (EUV lithography)