Memory

Part Number	Description / PDF	Quantity
CY7C1381C-100BGCT Rochester Electronics	SRAM SYNC QUAD18M-BIT 512K X 36	2500
S29CL016J0JQFM030 Cypress Semiconductor	IC FLASH 16MBIT PARALLEL 80PQFP	0
71V65603S100PFG8 Renesas Electronics America	IC SRAM 9MBIT PARALLEL 100TQFP	0
MSR820AJC288-12 MoSys	IC SRAM 576MBIT PAR 324PBGA	40
AS7C34096B-10BINTR Alliance Memory, Inc.	IC SRAM 4MBIT PARALLEL 36TFBGA	0
W9864G6KH-5 Winbond Electronics Corporation	IC DRAM 64MBIT PAR 54TSOP II	0
25LC160BT-E/ST Roving Networks / Microchip Technology	IC EEPROM 16KBIT SPI 8TSSOP	0
CY7C1460KV25-167AXC Cypress Semiconductor	IC SRAM 36MBIT PARALLEL 100TQFP	0
AT25DN011-SSHF-T Adesto Technologies	IC FLASH 1MBIT SPI 104MHZ 8SOIC	10263
S-93L76AD0I-K8T3U ABLIC U.S.A. Inc.	IC EEPROM 8KBIT SPI 2MHZ 8TMSOP	100
24C00-I/P Roving Networks / Microchip Technology	IC EEPROM 128B I2C 400KHZ 8DIP	0
CY7C4141KV13-633FCXI Cypress Semiconductor	IC SRAM 144MBIT PAR 361FCBGA	0
W25R128JVPIQ Winbond Electronics Corporation	IC FLASH 128MBIT SPI/QUAD 8WSON	0
MT58L128L32F1F-10 Micron Technology	IC SRAM 4MBIT PARALLEL 165FBGA	1117
CY7C1512V18-167BZC IR (Infineon Technologies)	IC SRAM 72MBIT PARALLEL 165FBGA	83
IS43R16320D-6BL ISSI (Integrated Silicon Solution, Inc.)	IC DRAM 512MBIT PARALLEL 60TFBGA	0
IS61C6416AL-12TLI-TR ISSI (Integrated Silicon Solution, Inc.)	IC SRAM 1MBIT PARALLEL 44TSOP II	0
EM08APGD3-BA000-2	8GB EMMC MLC 11.5X13X1.0 153 BAL	0
70T633S12BC8 Renesas Electronics America	IC SRAM 9MBIT PARALLEL 256CABGA	0
TH58BVG3S0HTA00 Toshiba Memory America, Inc. (Kioxia America, Inc.)	IC FLASH 8GBIT PARALLEL 48TSOP I	99

Memory

1. Overview

Memory integrated circuits (ICs) are semiconductor devices used for storing digital data in electronic systems. As fundamental components of modern electronics, they enable data retention and retrieval in computers, mobile devices, industrial equipment, and automotive systems. Memory ICs are categorized into volatile (requires power to retain data) and non-volatile (retains data without power) types, playing critical roles in system performance, storage capacity, and energy efficiency.

2. Major Types and Functional Classification

Type	Functional Characteristics	Application Examples
DRAM (Dynamic RAM)	High-density, low-cost, requires periodic refresh	PCs, Servers, Graphics Cards
NAND Flash	Non-volatile, high endurance, block-level access	SSDs, USB Drives, Mobile Storage
SRAM (Static RAM)	High-speed, low density, no refresh required	Cache Memory, Networking Equipment
NOR Flash	Random access, execute-in-place capability	Embedded Systems, Automotive ECUs
MRAM (Magnetoresistive RAM)	Non-volatile, unlimited endurance, low power	IoT Devices, Industrial Sensors

3. Structure and Composition

Memory ICs typically consist of:

Storage Cell Array: Matrix of memory cells (transistors/capacitors for DRAM, floating-gate transistors for Flash)
Address Decoder: Selects specific memory locations
I/O Circuits: Data input/output interfaces
Control Logic: Manages read/write operations and timing
Power Management Units: Optimizes energy consumption

Advanced packages include BGA (Ball Grid Array) and 3D-stacked configurations for density optimization.

4. Key Technical Specifications

Parameter	Description	Importance
Storage Capacity	Data volume (Gb/GiB)	Determines system memory limits
Access Time	ns/predictable latency	Impacts processing speed
Power Consumption	mW/MHz	Affects battery life and thermal design
Endurance	P/E cycles (Flash)	Dictates product lifespan
Data Retention	Years (non-volatile)	Critical for long-term storage

5. Application Areas

Consumer Electronics: Smartphones (NAND Flash), Gaming Consoles (GDDR6)
Industrial Automation: PLCs (SRAM), Data Loggers (MRAM)
Automotive Systems: ADAS (LPDDR5), Infotainment (eMMC)
Enterprise Storage: SSD Controllers (3D NAND), Servers (RDIMM)

6. Leading Manufacturers and Products

Manufacturer	Representative Products
Samsung Electronics	V-NAND (9x-layer), LPDDR5X
SK hynix	HBM3 (8GB/s bandwidth), GDDR6
Microchip Technology	Serial NOR Flash (SST26)
Kioxia Corporation	BiCS FLASH (3D NAND)
Infineon Technologies	MRAM (40nm process)

7. Selection Recommendations

Key considerations:

Match memory type to application requirements (e.g., NOR Flash for code storage)
Evaluate bandwidth vs. latency tradeoffs
Analyze temperature and vibration specifications
Assess long-term supply stability
Optimize cost-per-bit metrics

Case Study: A smartphone manufacturer selected UFS 3.1 (NAND-based) for 2100MB/s read speeds, improving app launch times by 35%.

8. Industry Trends

Future directions include:

3D NAND scaling beyond 200 layers
Emerging memories (ReRAM, PCM) for AI acceleration
Package-on-Package (PoP) integration
AI-optimized memory architectures (Processing-in-Memory)
Green manufacturing processes (EUV lithography)