Memory

Part Number	Description / PDF	Quantity
CY62256L-70SNXC IR (Infineon Technologies)	IC SRAM 256KBIT PARALLEL 28SOIC	6897
IS42S16160G-6TLI ISSI (Integrated Silicon Solution, Inc.)	IC DRAM 256MBIT PAR 54TSOP II	0
S-24C04DI-K8T3U5 ABLIC U.S.A. Inc.	IC EEPROM 4KBIT I2C 1MHZ 8TMSOP	100
IS42S32800G-7BL-TR ISSI (Integrated Silicon Solution, Inc.)	IC DRAM 256MBIT PARALLEL 90TFBGA	0
25AA020AT-I/ST Roving Networks / Microchip Technology	IC EEPROM 2KBIT SPI 10MHZ 8TSSOP	2950
IS61C64AL-10TLI ISSI (Integrated Silicon Solution, Inc.)	IC SRAM 64KBIT PARALLEL 28TSOP I	0
MX25U4035MI-25G Macronix	IC FLASH 4MBIT SPI 40MHZ 8SOP	2557
S29GL032N90BAI030 Cypress Semiconductor	IC FLASH 32MBIT PARALLEL 48FBGA	0
24AA256T-I/MS Roving Networks / Microchip Technology	IC EEPROM 256KBIT I2C 8MSOP	0
11LC161-I/SN Roving Networks / Microchip Technology	IC EEPROM 16KBIT SGL WIRE 8SOIC	0
AS4C16M16D1A-5TINTR Alliance Memory, Inc.	IC DRAM 256MBIT PAR 66TSOP II	0
MT29F4G08ABBDAH4:D TR Micron Technology	IC FLASH 4GBIT PARALLEL 63VFBGA	612
BR25160N-10SU-1.8 ROHM Semiconductor	IC EEPROM 16KBIT SPI 3MHZ 8SOIC	0
24LC16BHT-E/MS Roving Networks / Microchip Technology	IC EEPROM 16KBIT I2C 8MSOP	0
GS82583ED36GK-675I GSI Technology	IC SRAM 288MBIT PARALLEL 260BGA	10
S-25C256A0I-J8T1U4 ABLIC U.S.A. Inc.	IC EEPROM 256KBIT SPI 10MHZ 8SOP	3990
71V65703S75PFGI8 Renesas Electronics America	IC SRAM 9MBIT PARALLEL 100TQFP	0
CY7C1270XV18-600BZXC IR (Infineon Technologies)	IC SRAM 36MBIT PARALLEL 165FBGA	193
AS7C3513B-15JCN Alliance Memory, Inc.	IC SRAM 512KBIT PARALLEL 44SOJ	0
HN58V65AT10E Renesas Electronics America	64 K EEPROM (8KWORD X 8-BIT)	808

Memory

1. Overview

Memory integrated circuits (ICs) are semiconductor devices used for storing digital data in electronic systems. As fundamental components of modern electronics, they enable data retention and retrieval in computers, mobile devices, industrial equipment, and automotive systems. Memory ICs are categorized into volatile (requires power to retain data) and non-volatile (retains data without power) types, playing critical roles in system performance, storage capacity, and energy efficiency.

2. Major Types and Functional Classification

Type	Functional Characteristics	Application Examples
DRAM (Dynamic RAM)	High-density, low-cost, requires periodic refresh	PCs, Servers, Graphics Cards
NAND Flash	Non-volatile, high endurance, block-level access	SSDs, USB Drives, Mobile Storage
SRAM (Static RAM)	High-speed, low density, no refresh required	Cache Memory, Networking Equipment
NOR Flash	Random access, execute-in-place capability	Embedded Systems, Automotive ECUs
MRAM (Magnetoresistive RAM)	Non-volatile, unlimited endurance, low power	IoT Devices, Industrial Sensors

3. Structure and Composition

Memory ICs typically consist of:

Storage Cell Array: Matrix of memory cells (transistors/capacitors for DRAM, floating-gate transistors for Flash)
Address Decoder: Selects specific memory locations
I/O Circuits: Data input/output interfaces
Control Logic: Manages read/write operations and timing
Power Management Units: Optimizes energy consumption

Advanced packages include BGA (Ball Grid Array) and 3D-stacked configurations for density optimization.

4. Key Technical Specifications

Parameter	Description	Importance
Storage Capacity	Data volume (Gb/GiB)	Determines system memory limits
Access Time	ns/predictable latency	Impacts processing speed
Power Consumption	mW/MHz	Affects battery life and thermal design
Endurance	P/E cycles (Flash)	Dictates product lifespan
Data Retention	Years (non-volatile)	Critical for long-term storage

5. Application Areas

Consumer Electronics: Smartphones (NAND Flash), Gaming Consoles (GDDR6)
Industrial Automation: PLCs (SRAM), Data Loggers (MRAM)
Automotive Systems: ADAS (LPDDR5), Infotainment (eMMC)
Enterprise Storage: SSD Controllers (3D NAND), Servers (RDIMM)

6. Leading Manufacturers and Products

Manufacturer	Representative Products
Samsung Electronics	V-NAND (9x-layer), LPDDR5X
SK hynix	HBM3 (8GB/s bandwidth), GDDR6
Microchip Technology	Serial NOR Flash (SST26)
Kioxia Corporation	BiCS FLASH (3D NAND)
Infineon Technologies	MRAM (40nm process)

7. Selection Recommendations

Key considerations:

Match memory type to application requirements (e.g., NOR Flash for code storage)
Evaluate bandwidth vs. latency tradeoffs
Analyze temperature and vibration specifications
Assess long-term supply stability
Optimize cost-per-bit metrics

Case Study: A smartphone manufacturer selected UFS 3.1 (NAND-based) for 2100MB/s read speeds, improving app launch times by 35%.

8. Industry Trends

Future directions include:

3D NAND scaling beyond 200 layers
Emerging memories (ReRAM, PCM) for AI acceleration
Package-on-Package (PoP) integration
AI-optimized memory architectures (Processing-in-Memory)
Green manufacturing processes (EUV lithography)